MX2012000756A - Led de alto brillo que utiliza una capa activa rugosa y revestimiento de conformacion. - Google Patents
Led de alto brillo que utiliza una capa activa rugosa y revestimiento de conformacion.Info
- Publication number
- MX2012000756A MX2012000756A MX2012000756A MX2012000756A MX2012000756A MX 2012000756 A MX2012000756 A MX 2012000756A MX 2012000756 A MX2012000756 A MX 2012000756A MX 2012000756 A MX2012000756 A MX 2012000756A MX 2012000756 A MX2012000756 A MX 2012000756A
- Authority
- MX
- Mexico
- Prior art keywords
- layer
- depressions
- active layer
- light
- led
- Prior art date
Links
- 238000005253 cladding Methods 0.000 title 1
- 239000000463 material Substances 0.000 claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 238000000034 method Methods 0.000 claims abstract description 16
- 230000012010 growth Effects 0.000 claims description 28
- 238000005530 etching Methods 0.000 claims description 11
- 229910052594 sapphire Inorganic materials 0.000 claims description 10
- 239000010980 sapphire Substances 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 9
- 239000013078 crystal Substances 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims 8
- 229910017083 AlN Inorganic materials 0.000 claims 2
- 229910003465 moissanite Inorganic materials 0.000 claims 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims 2
- 239000010410 layer Substances 0.000 description 148
- 239000011247 coating layer Substances 0.000 description 35
- 238000006243 chemical reaction Methods 0.000 description 8
- 238000000605 extraction Methods 0.000 description 8
- 230000006872 improvement Effects 0.000 description 7
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000007788 roughening Methods 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000003698 anagen phase Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/545,358 US8232568B2 (en) | 2009-08-21 | 2009-08-21 | High brightness LED utilizing a roughened active layer and conformal cladding |
| PCT/US2010/041356 WO2011022128A2 (en) | 2009-08-21 | 2010-07-08 | High brightness led utilizing a roughened active layer and conformal cladding |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| MX2012000756A true MX2012000756A (es) | 2012-06-01 |
Family
ID=42221962
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MX2012000756A MX2012000756A (es) | 2009-08-21 | 2010-07-08 | Led de alto brillo que utiliza una capa activa rugosa y revestimiento de conformacion. |
Country Status (13)
| Country | Link |
|---|---|
| US (1) | US8232568B2 (pt) |
| EP (1) | EP2467883A4 (pt) |
| JP (1) | JP5649653B2 (pt) |
| KR (1) | KR20120048642A (pt) |
| CN (1) | CN102473801B (pt) |
| BR (1) | BR112012003451B1 (pt) |
| CA (1) | CA2769702A1 (pt) |
| MX (1) | MX2012000756A (pt) |
| MY (1) | MY156894A (pt) |
| RU (1) | RU2552867C2 (pt) |
| SG (1) | SG178018A1 (pt) |
| TW (1) | TWI446585B (pt) |
| WO (1) | WO2011022128A2 (pt) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102010051286A1 (de) * | 2010-11-12 | 2012-05-16 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung |
| CN102487111B (zh) * | 2010-12-04 | 2014-08-27 | 展晶科技(深圳)有限公司 | 半导体发光芯片制造方法 |
| FR2969815B1 (fr) * | 2010-12-27 | 2013-11-22 | Soitec Silicon On Insulator Tech | Procédé de fabrication d'un dispositif semi-conducteur |
| DE102011012925A1 (de) * | 2011-03-03 | 2012-09-06 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Halbleiterchips |
| TW201240145A (en) * | 2011-03-21 | 2012-10-01 | Walsin Lihwa Corp | Light emitting diode and method of manufacturing the same |
| WO2013015472A1 (ko) * | 2011-07-28 | 2013-01-31 | 삼성전자주식회사 | 반도체 발광소자 및 그 제조방법 |
| KR101804408B1 (ko) | 2011-09-05 | 2017-12-04 | 엘지이노텍 주식회사 | 발광소자 |
| JP5162016B1 (ja) * | 2011-09-15 | 2013-03-13 | 株式会社東芝 | 半導体素子、ウェーハ、半導体素子の製造方法及びウェーハの製造方法 |
| US8664679B2 (en) * | 2011-09-29 | 2014-03-04 | Toshiba Techno Center Inc. | Light emitting devices having light coupling layers with recessed electrodes |
| KR20140104756A (ko) * | 2013-02-21 | 2014-08-29 | 삼성전자주식회사 | 질화물 반도체 발광소자 및 그 제조방법 |
| DE102013103602A1 (de) * | 2013-04-10 | 2014-10-16 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und Verfahren zu seiner Herstellung |
| DE102013103601A1 (de) | 2013-04-10 | 2014-10-16 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements |
| JP6010869B2 (ja) | 2013-09-25 | 2016-10-19 | 豊田合成株式会社 | Ｉｉｉ 族窒化物半導体発光素子 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2927661B2 (ja) * | 1993-12-20 | 1999-07-28 | シャープ株式会社 | スーパールミネッセントダイオード素子およびその製造方法 |
| JP2000174335A (ja) | 1998-12-03 | 2000-06-23 | Rohm Co Ltd | ＧａＮ系化合物半導体発光素子の製造方法 |
| JP2000286506A (ja) | 1999-03-31 | 2000-10-13 | Furukawa Electric Co Ltd:The | ＧａＮ系発光素子 |
| JP4595198B2 (ja) * | 2000-12-15 | 2010-12-08 | ソニー株式会社 | 半導体発光素子及び半導体発光素子の製造方法 |
| WO2002065556A1 (fr) * | 2001-02-15 | 2002-08-22 | Sharp Kabushiki Kaisha | Element de source lumineuse a semi-conducteur a base de nitrure et son procede de realisation |
| AUPR534201A0 (en) | 2001-05-30 | 2001-06-21 | Unisearch Limited | High efficiency silicon light emitting device |
| JP2003151910A (ja) | 2001-11-16 | 2003-05-23 | Mitsubishi Cable Ind Ltd | ＧａＮ系半導体基材 |
| US7446345B2 (en) * | 2005-04-29 | 2008-11-04 | Cree, Inc. | Light emitting devices with active layers that extend into opened pits |
| KR100801219B1 (ko) * | 2005-06-25 | 2008-02-11 | (주)에피플러스 | 고휘도 발광 다이오드 |
| US7560364B2 (en) * | 2006-05-05 | 2009-07-14 | Applied Materials, Inc. | Dislocation-specific lateral epitaxial overgrowth to reduce dislocation density of nitride films |
| KR20090010284A (ko) | 2007-07-23 | 2009-01-30 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
| KR101020961B1 (ko) * | 2008-05-02 | 2011-03-09 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
| US8390008B2 (en) * | 2008-05-29 | 2013-03-05 | Global Oled Technology Llc | LED device structure to improve light output |
| RU83655U1 (ru) * | 2008-06-26 | 2009-06-10 | Общество с ограниченной ответственностью "Эпи-Тех" | Светодиодная гетероструктура с множественными ingan/gan квантовыми ямами |
-
2009
- 2009-08-21 US US12/545,358 patent/US8232568B2/en active Active
-
2010
- 2010-07-08 CA CA2769702A patent/CA2769702A1/en not_active Abandoned
- 2010-07-08 EP EP10810331.8A patent/EP2467883A4/en not_active Withdrawn
- 2010-07-08 KR KR1020127004424A patent/KR20120048642A/ko not_active Application Discontinuation
- 2010-07-08 CN CN201080035157.8A patent/CN102473801B/zh active Active
- 2010-07-08 RU RU2012108959/28A patent/RU2552867C2/ru active
- 2010-07-08 MX MX2012000756A patent/MX2012000756A/es active IP Right Grant
- 2010-07-08 WO PCT/US2010/041356 patent/WO2011022128A2/en active Application Filing
- 2010-07-08 SG SG2011097771A patent/SG178018A1/en unknown
- 2010-07-08 JP JP2012525571A patent/JP5649653B2/ja active Active
- 2010-07-08 MY MYPI2012000048A patent/MY156894A/en unknown
- 2010-07-08 BR BR112012003451-0A patent/BR112012003451B1/pt not_active IP Right Cessation
- 2010-08-05 TW TW099126060A patent/TWI446585B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| BR112012003451A2 (pt) | 2020-10-20 |
| WO2011022128A3 (en) | 2011-04-14 |
| EP2467883A2 (en) | 2012-06-27 |
| RU2552867C2 (ru) | 2015-06-10 |
| MY156894A (en) | 2016-04-15 |
| TW201130160A (en) | 2011-09-01 |
| JP2013502722A (ja) | 2013-01-24 |
| WO2011022128A2 (en) | 2011-02-24 |
| SG178018A1 (en) | 2012-03-29 |
| TWI446585B (zh) | 2014-07-21 |
| CN102473801B (zh) | 2016-04-27 |
| EP2467883A4 (en) | 2014-06-18 |
| US8232568B2 (en) | 2012-07-31 |
| US20100133562A1 (en) | 2010-06-03 |
| RU2012108959A (ru) | 2013-10-20 |
| JP5649653B2 (ja) | 2015-01-07 |
| KR20120048642A (ko) | 2012-05-15 |
| BR112012003451B1 (pt) | 2021-08-17 |
| CN102473801A (zh) | 2012-05-23 |
| CA2769702A1 (en) | 2011-02-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GB | Transfer or rights |
Owner name: KABUSHIKI KAISHA TOSHIBA |
|
| FG | Grant or registration | ||
| GB | Transfer or rights | ||
| PD | Change of proprietorship |
Owner name: KABUSHIKI KAISHA TOSHIBA |