MX2009013770A - Celda solar. - Google Patents

Celda solar.

Info

Publication number
MX2009013770A
MX2009013770A MX2009013770A MX2009013770A MX2009013770A MX 2009013770 A MX2009013770 A MX 2009013770A MX 2009013770 A MX2009013770 A MX 2009013770A MX 2009013770 A MX2009013770 A MX 2009013770A MX 2009013770 A MX2009013770 A MX 2009013770A
Authority
MX
Mexico
Prior art keywords
solar cell
junction
deterioration
prevented
diffusion layer
Prior art date
Application number
MX2009013770A
Other languages
English (en)
Inventor
Josuke Nakata
Original Assignee
Kyosemi Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyosemi Corp filed Critical Kyosemi Corp
Publication of MX2009013770A publication Critical patent/MX2009013770A/es

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/142—Energy conversion devices
    • H01L27/1421—Energy conversion devices comprising bypass diodes integrated or directly associated with the device, e.g. bypass diode integrated or formed in or on the same substrate as the solar cell
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Una celda solar la cual comprende una unión p+n+ compuesta de una unión pn capaz de generar energia fotovoltaica sobre un monocristal de silicio tipo p y una capa de difusión n+ y una capa de difusión p+ en la cual están añadidas impurezas en una alta concentración en una porción de la unión p+n+, posee propiedades de conductividad inversa para el flujo de corriente a través de una unión p+n+ cuando una celda solar se polariza en la dirección inversa. Además de evitar la generación de calor y el deterioro de una celda solar cuando cualesquiera de las celdas solares son ensombrecidas, sin conectar un diodo de derivación externo, cuando un modulo de celdas solares se fabrica usando una pluralidad de celdas solares, también puede evitarse una reducción en la eficiencia de generación de energía en toda el módulo de celdas solares.
MX2009013770A 2007-07-18 2007-07-18 Celda solar. MX2009013770A (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/000773 WO2009011013A1 (ja) 2007-07-18 2007-07-18 太陽電池セル

Publications (1)

Publication Number Publication Date
MX2009013770A true MX2009013770A (es) 2010-02-01

Family

ID=40259362

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2009013770A MX2009013770A (es) 2007-07-18 2007-07-18 Celda solar.

Country Status (11)

Country Link
US (1) US20100132776A1 (es)
EP (1) EP2175496A1 (es)
JP (1) JP5225275B2 (es)
KR (1) KR20100024511A (es)
CN (1) CN101689571B (es)
AU (1) AU2007356610B2 (es)
CA (1) CA2693222A1 (es)
HK (1) HK1138939A1 (es)
MX (1) MX2009013770A (es)
TW (1) TW200905897A (es)
WO (1) WO2009011013A1 (es)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102484159A (zh) * 2009-02-27 2012-05-30 科根纳太阳能公司 一维集中式光伏系统
EP2436041A2 (en) * 2009-05-26 2012-04-04 Cogenra Solar, Inc. Concentrating solar photovoltaic-thermal system
US20110017267A1 (en) * 2009-11-19 2011-01-27 Joseph Isaac Lichy Receiver for concentrating photovoltaic-thermal system
US20110271999A1 (en) 2010-05-05 2011-11-10 Cogenra Solar, Inc. Receiver for concentrating photovoltaic-thermal system
US8686279B2 (en) 2010-05-17 2014-04-01 Cogenra Solar, Inc. Concentrating solar energy collector
US8669462B2 (en) 2010-05-24 2014-03-11 Cogenra Solar, Inc. Concentrating solar energy collector
CN101950772B (zh) * 2010-08-05 2013-01-23 中山大学 一种具有旁路二极管的晶体硅太阳电池的制备方法
JP5716197B2 (ja) * 2011-10-21 2015-05-13 スフェラーパワー株式会社 半導体機能素子付き機能糸とその製造方法
US9912290B2 (en) 2012-06-18 2018-03-06 Sunpower Corporation High current burn-in of solar cells
CN102916393B (zh) * 2012-10-09 2014-11-26 祝厉华 太阳能电池保护器、太阳能电池组及太阳能电池保护芯片
US20140124014A1 (en) 2012-11-08 2014-05-08 Cogenra Solar, Inc. High efficiency configuration for solar cell string
US9270225B2 (en) 2013-01-14 2016-02-23 Sunpower Corporation Concentrating solar energy collector
JP6664848B2 (ja) * 2016-12-26 2020-03-13 東芝三菱電機産業システム株式会社 光デバイス装置
CN110649119B (zh) * 2019-09-12 2024-06-14 常州比太科技有限公司 一种基于晶硅的太阳能发电组件及其制备方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4004949A (en) * 1975-01-06 1977-01-25 Motorola, Inc. Method of making silicon solar cells
JPS5664475A (en) 1979-08-23 1981-06-01 Unisearch Ltd Solar battery with branching diode
AU715515B2 (en) * 1996-10-09 2000-02-03 Sphelar Power Corporation Semiconductor device
KR100549249B1 (ko) * 2000-10-20 2006-02-03 죠스케 나카다 발광 또는 수광용 반도체 장치 및 그 제조 방법
CA2456671C (en) * 2001-08-13 2009-09-22 Josuke Nakata Light emitting or light receiving semiconductor module and making method thereof
JP2004288988A (ja) * 2003-03-24 2004-10-14 Nanoteco Corp 発光素子
JP4827471B2 (ja) * 2005-09-09 2011-11-30 シャープ株式会社 バイパス機能付き太陽電池およびその製造方法

Also Published As

Publication number Publication date
HK1138939A1 (en) 2010-09-03
US20100132776A1 (en) 2010-06-03
CA2693222A1 (en) 2009-01-22
AU2007356610A1 (en) 2009-01-22
JP5225275B2 (ja) 2013-07-03
AU2007356610B2 (en) 2011-11-24
JPWO2009011013A1 (ja) 2010-09-09
TW200905897A (en) 2009-02-01
KR20100024511A (ko) 2010-03-05
CN101689571B (zh) 2013-01-09
WO2009011013A1 (ja) 2009-01-22
EP2175496A1 (en) 2010-04-14
CN101689571A (zh) 2010-03-31

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Legal Events

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