MX172813B - Procedimiento de grabado en humedo y la composicion - Google Patents

Procedimiento de grabado en humedo y la composicion

Info

Publication number
MX172813B
MX172813B MX024813A MX2481391A MX172813B MX 172813 B MX172813 B MX 172813B MX 024813 A MX024813 A MX 024813A MX 2481391 A MX2481391 A MX 2481391A MX 172813 B MX172813 B MX 172813B
Authority
MX
Mexico
Prior art keywords
composition
weight
polyamic acid
engraving procedure
wet engraving
Prior art date
Application number
MX024813A
Other languages
English (en)
Inventor
Douglas Eric Fjare
Allyson Jeanne Beuhler
Cinthia Ann Navar
Original Assignee
Amoco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Amoco Corp filed Critical Amoco Corp
Publication of MX172813B publication Critical patent/MX172813B/es

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J7/00—Chemical treatment or coating of shaped articles made of macromolecular substances
    • C08J7/12—Chemical modification
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Paints Or Removers (AREA)
  • Weting (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
  • Compositions Of Macromolecular Compounds (AREA)

Abstract

La presente invención se refiere a una coposición de grabar en húmedo al ácido poliámico o al ácido poliámico parcialmente curado, que comprende una solución acuosa que tiene una mayor porción de agua de un disolvente de hidrocarburo substituído, y una base no-ionica en una relación en peso de 0.1- 49:49- 0.1 con la condición de que la composición contenga menos de 1.0 porciento por peso de la base iónica.
MX024813A 1990-03-09 1991-03-07 Procedimiento de grabado en humedo y la composicion MX172813B (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US49143890A 1990-03-09 1990-03-09
US07/605,555 US5183534A (en) 1990-03-09 1990-10-30 Wet-etch process and composition

Publications (1)

Publication Number Publication Date
MX172813B true MX172813B (es) 1994-01-13

Family

ID=27050443

Family Applications (1)

Application Number Title Priority Date Filing Date
MX024813A MX172813B (es) 1990-03-09 1991-03-07 Procedimiento de grabado en humedo y la composicion

Country Status (8)

Country Link
US (2) US5183534A (es)
EP (1) EP0446032B1 (es)
JP (1) JP3173730B2 (es)
KR (1) KR100201194B1 (es)
CA (1) CA2037490C (es)
DE (1) DE69109898T2 (es)
MX (1) MX172813B (es)
MY (1) MY105324A (es)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5350489A (en) * 1990-10-19 1994-09-27 Purex Co., Ltd. Treatment method of cleaning surface of plastic molded item
US5397506A (en) * 1993-08-20 1995-03-14 Ecolab Inc. Solid cleaner
US5443688A (en) * 1993-12-02 1995-08-22 Raytheon Company Method of manufacturing a ferroelectric device using a plasma etching process
US5714196A (en) * 1994-07-20 1998-02-03 Galileo Corporation Method of forming a strippable polyimide coating for an optical fiber
US5649045A (en) * 1995-12-13 1997-07-15 Amoco Corporation Polymide optical waveguide structures
US5914052A (en) * 1997-08-21 1999-06-22 Micron Technology, Inc. Wet etch method and apparatus
US6159666A (en) * 1998-01-14 2000-12-12 Fijitsu Limited Environmentally friendly removal of photoresists used in wet etchable polyimide processes
US6221567B1 (en) 1998-01-14 2001-04-24 Fujitsu Limited Method of patterning polyamic acid layers
CA2292572A1 (en) * 1998-04-15 1999-10-21 Zoilo Cheng Ho Tan Photoresist developer and method of development
EP1202859B1 (en) 1999-07-27 2003-04-09 North Carolina State University Patterned release film between two laminated surfaces
KR100356987B1 (ko) * 2000-01-22 2002-10-18 엘지.필립스 엘시디 주식회사 열경화성 수지 제거용 조성물
US7041232B2 (en) * 2001-03-26 2006-05-09 International Business Machines Corporation Selective etching of substrates with control of the etch profile
US7261997B2 (en) * 2002-01-17 2007-08-28 Brewer Science Inc. Spin bowl compatible polyamic acids/imides as wet developable polymer binders for anti-reflective coatings
US7325309B2 (en) 2004-06-08 2008-02-05 Hewlett-Packard Development Company, L.P. Method of manufacturing a fluid ejection device with a dry-film photo-resist layer
US7323699B2 (en) * 2005-02-02 2008-01-29 Rave, Llc Apparatus and method for modifying an object
US20070290379A1 (en) * 2006-06-15 2007-12-20 Dueber Thomas E Hydrophobic compositions for electronic applications
JP5063138B2 (ja) * 2007-02-23 2012-10-31 株式会社Ｓｏｋｕｄｏ 基板現像方法および現像装置
US20080206997A1 (en) * 2007-02-26 2008-08-28 Semiconductor Energy Laboratory Co., Ltd. Method for Manufacturing Insulating Film and Method for Manufacturing Semiconductor Device
US9085751B2 (en) * 2010-07-09 2015-07-21 Kaken Tech Co., Ltd. Liquid concentrate for cleaning composition, cleaning composition and cleaning method
WO2013066058A2 (ko) * 2011-11-04 2013-05-10 동우 화인켐 주식회사 자성체막 및 자성체막 잔류물 제거용 조성물
KR102468776B1 (ko) 2015-09-21 2022-11-22 삼성전자주식회사 폴리실리콘 습식 식각용 조성물 및 이를 이용한 반도체 소자의 제조 방법
JP2019162565A (ja) * 2016-07-25 2019-09-26 富士フイルム株式会社 ガス分離膜、ガス分離膜モジュールおよびガス分離装置
TWI678596B (zh) * 2018-09-13 2019-12-01 新應材股份有限公司 正型光阻組成物及圖案化聚醯亞胺層之形成方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3361589A (en) * 1964-10-05 1968-01-02 Du Pont Process for treating polyimide surface with basic compounds, and polyimide surface having thin layer of polyamide acid
US3791848A (en) * 1972-05-19 1974-02-12 Western Electric Co A method of improving the adherence of a metal deposit to a polyimide surface
US4276186A (en) * 1979-06-26 1981-06-30 International Business Machines Corporation Cleaning composition and use thereof
US4369090A (en) * 1980-11-06 1983-01-18 Texas Instruments Incorporated Process for etching sloped vias in polyimide insulators
JPS58108229A (ja) * 1981-12-21 1983-06-28 Hitachi Ltd ポリイミド系樹脂膜の選択エツチング方法
US4411735A (en) * 1982-05-06 1983-10-25 National Semiconductor Corporation Polymeric insulation layer etching process and composition
US4592787A (en) * 1984-11-05 1986-06-03 The Dow Chemical Company Composition useful for stripping photoresist polymers and method
DE3602800A1 (de) * 1985-06-07 1986-12-11 agru Alois Gruber + Sohn oHG, Bad Hall Verfahren zur oberflaechenmodifizierung von formkoerpern aus polyvinylidenfluorid
US4873136A (en) * 1988-06-16 1989-10-10 General Electric Company Method for preparing polymer surfaces for subsequent plating thereon, and improved metal-plated plastic articles made therefrom
US4857143A (en) * 1988-12-16 1989-08-15 International Business Machines Corp. Wet etching of cured polyimide

Also Published As

Publication number Publication date
KR910016902A (ko) 1991-11-05
US5292445A (en) 1994-03-08
JP3173730B2 (ja) 2001-06-04
EP0446032A3 (en) 1992-04-15
JPH04219933A (ja) 1992-08-11
CA2037490C (en) 2002-05-21
MY105324A (en) 1994-09-30
CA2037490A1 (en) 1992-05-01
EP0446032B1 (en) 1995-05-24
US5183534A (en) 1993-02-02
DE69109898T2 (de) 1995-10-19
EP0446032A2 (en) 1991-09-11
KR100201194B1 (ko) 1999-06-15
DE69109898D1 (de) 1995-06-29

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