MD4377C1 - Convertor fotovoltaic semiconductor şi procedeu de fabricare a acestuia - Google Patents

Convertor fotovoltaic semiconductor şi procedeu de fabricare a acestuia

Info

Publication number
MD4377C1
MD4377C1 MDA20100068A MD20100068A MD4377C1 MD 4377 C1 MD4377 C1 MD 4377C1 MD A20100068 A MDA20100068 A MD A20100068A MD 20100068 A MD20100068 A MD 20100068A MD 4377 C1 MD4377 C1 MD 4377C1
Authority
MD
Moldova
Prior art keywords
photoelectric converter
current
solder
semiconductor layer
semiconductor
Prior art date
Application number
MDA20100068A
Other languages
English (en)
Russian (ru)
Other versions
MD4377B1 (ro
MD20100068A2 (ro
Inventor
Вильгельм КОСОВ
Виктор КЛАУЗЕР
Татьяна КОСОВА
Александру МАТЮШЕНСКИЙ
Original Assignee
Вильгельм КОСОВ
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Вильгельм КОСОВ filed Critical Вильгельм КОСОВ
Priority to MDA20100068A priority Critical patent/MD4377C1/ro
Publication of MD20100068A2 publication Critical patent/MD20100068A2/ro
Publication of MD4377B1 publication Critical patent/MD4377B1/ro
Publication of MD4377C1 publication Critical patent/MD4377C1/ro

Links

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

Invenţia se referă la tehnica de conversie a energiei radiaţiei solare în energie electrică, în particular, la construcţia contactelor şi la compoziţia chimică a materialelor, utilizate la fabricarea elementelor conducătoare de curent şi semiconductoare ale convertorului fotovoltaic.Convertorul fotovoltaic semiconductor conţine un strat semiconductor, pe suprafaţa frontală a căruia sunt aplicate contacte metalice colectoare de curent şi un strat de adeziv organosilicic, iar pe suprafaţa opusă a stratului semiconductor este aplicat un strat de aliaj de lipit. Stratul semiconductor este executat din nanocristale de siliciu, planele cristalografice ale cărora sunt orientate într-o direcţie. Aliajul de lipit pe bază de cositor conţine stibiu în cantitate de 3...4% din masa aliajului. Contactele colectoare de curent sunt confecţionate din aliaj galvanic de fier-cobalt sau de fier-cadmiu, iar stratul de protecţie din adeziv organosilicic cu grosimea de 0,17…0,2 mm este aplicat pe toate suprafeţele convertorului.Procedeul de fabricare a convertorului fotovoltaic semiconductor constă în aceea că se orientează nanocristalele de siliciu prin rotirea unei surse de câmp electrostatic exterior în jurul stratului semiconductor şi se determină experimental unghiul sub care se fixează sursa de câmp electrostatic exterior. Se topeşte pelicula din aliaj de lipit pe bază de cositor aliat cu stibiu, se depun în aliaj nanocristalele de siliciu orientate cu alierea concomitentă a unei părţi de nanocristale cu stibiu şi se răceşte aliajul. Placa obţinută se cufundă într-o baie galvanică cu electrolit şi se efectuează tratarea anodică a suprafeţei frontale a stratului semiconductor în decurs de 25 s la densitatea de amplitudine a curentului de 55...60 A/dm2. Se fixează un şablon de suprafaţa frontală curăţită de oxizi şi de impurităţi a plăcii obţinute, se conectează placa cu catodul la o sursă de curent periodic cu impuls de retur reglabil după amplitudine şi după durată, şi la raportul amplitudinilor impulsului catodic şi celui anodic de curent egal cu 6:1, în decurs de 3 min se măreşte densitatea impulsului direct de la 0 până la 40 A/dm2 şi se depune aliajul galvanic în decurs de 12...20 min la raportul stabilit al curenţilor. Convertorul fotovoltaic obţinut se spală cu apă distilată la temperatura de ~330K, se usucă, se cufundă în adeziv organosilicic, se înlătură din vasul cu adeziv şi se usucă în dulapul de uscat la temperatura de 360K timp de 10 min.
MDA20100068A 2010-05-19 2010-05-19 Convertor fotovoltaic semiconductor şi procedeu de fabricare a acestuia MD4377C1 (ro)

Priority Applications (1)

Application Number Priority Date Filing Date Title
MDA20100068A MD4377C1 (ro) 2010-05-19 2010-05-19 Convertor fotovoltaic semiconductor şi procedeu de fabricare a acestuia

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MDA20100068A MD4377C1 (ro) 2010-05-19 2010-05-19 Convertor fotovoltaic semiconductor şi procedeu de fabricare a acestuia

Publications (3)

Publication Number Publication Date
MD20100068A2 MD20100068A2 (ro) 2011-11-30
MD4377B1 MD4377B1 (ro) 2015-10-31
MD4377C1 true MD4377C1 (ro) 2016-05-31

Family

ID=45815309

Family Applications (1)

Application Number Title Priority Date Filing Date
MDA20100068A MD4377C1 (ro) 2010-05-19 2010-05-19 Convertor fotovoltaic semiconductor şi procedeu de fabricare a acestuia

Country Status (1)

Country Link
MD (1) MD4377C1 (ro)

Citations (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2507822A1 (fr) * 1979-05-29 1982-12-17 Photowatt International Procede de fabrication de cellules solaires et cellules solaires correspondantes
US5340410A (en) * 1991-11-08 1994-08-23 Siemens Aktiengesellschaft Method for manufacturing polycrystalline silicon thin-film solar cells
US5731213A (en) * 1992-07-28 1998-03-24 Kabushiki Kaisha Toshiba Semiconductor light receiving device and method of manufacturing the same
US5800611A (en) * 1997-09-08 1998-09-01 Christensen; Howard Method for making large area single crystal silicon sheets
RU2127472C1 (ru) * 1996-03-28 1999-03-10 Всероссийский научно-исследовательский институт электрификации сельского хозяйства Способ изготовления полупроводникового фотопреобразователя
RU2144718C1 (ru) * 1999-06-24 2000-01-20 Государственный научный центр РФ Институт медико-биологических проблем Полупроводниковый фотопреобразователь солнечной энергии для космических аппаратов
US6057507A (en) * 1998-09-10 2000-05-02 Jx Crystals Inc. Coarse grain polycrystalline gallium antimonide thermophotovoltaic cell
JP2002211996A (ja) * 2000-11-15 2002-07-31 Deutsche Solar Gmbh 活性粒界の比率が低い多結晶性ケイ素
JP2003188398A (ja) * 2001-12-18 2003-07-04 Mitsubishi Heavy Ind Ltd 光電変換装置及び結晶性Si薄膜の評価方法
WO2003105239A2 (de) * 2002-06-07 2003-12-18 Daimlerchrysler Ag Solarzelle und verfahren zur herstellung
RU2227343C2 (ru) * 2001-11-27 2004-04-20 Миловзоров Дмитрий Евгеньевич Тонкие пленки гидрогенизированного поликристаллического кремния и технология их получения
JP2004134432A (ja) * 2002-10-08 2004-04-30 Sanyo Electric Co Ltd 光電変換装置
US20060237719A1 (en) * 2002-10-30 2006-10-26 Hewlett-Packard Development Company, L.P. Electronic components
RU2303830C2 (ru) * 2005-03-21 2007-07-27 Общество с ограниченной ответственностью "СОЛЭКС"(ООО "СОЛЭКС") Толстопленочный контакт кремниевого фотоэлектрического преобразователя и способ его получения
EP2136410A1 (en) * 1997-08-21 2009-12-23 Kaneka Corporation Thin film photoelectric converter
US20100075456A1 (en) * 2008-09-19 2010-03-25 Angel Sanjurjo Method and system for producing films for devices such as solar cells from semiconductor powders or dust
RU2009144623A (ru) * 2009-12-01 2011-06-10 Закрытое акционерное общество "Воронежский центр микроэлектроники" (RU) Солнечный элемент и способ его изготовления

Patent Citations (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2507822A1 (fr) * 1979-05-29 1982-12-17 Photowatt International Procede de fabrication de cellules solaires et cellules solaires correspondantes
US5340410A (en) * 1991-11-08 1994-08-23 Siemens Aktiengesellschaft Method for manufacturing polycrystalline silicon thin-film solar cells
US5731213A (en) * 1992-07-28 1998-03-24 Kabushiki Kaisha Toshiba Semiconductor light receiving device and method of manufacturing the same
RU2127472C1 (ru) * 1996-03-28 1999-03-10 Всероссийский научно-исследовательский институт электрификации сельского хозяйства Способ изготовления полупроводникового фотопреобразователя
EP2136410A1 (en) * 1997-08-21 2009-12-23 Kaneka Corporation Thin film photoelectric converter
US5800611A (en) * 1997-09-08 1998-09-01 Christensen; Howard Method for making large area single crystal silicon sheets
US6057507A (en) * 1998-09-10 2000-05-02 Jx Crystals Inc. Coarse grain polycrystalline gallium antimonide thermophotovoltaic cell
RU2144718C1 (ru) * 1999-06-24 2000-01-20 Государственный научный центр РФ Институт медико-биологических проблем Полупроводниковый фотопреобразователь солнечной энергии для космических аппаратов
JP2002211996A (ja) * 2000-11-15 2002-07-31 Deutsche Solar Gmbh 活性粒界の比率が低い多結晶性ケイ素
RU2227343C2 (ru) * 2001-11-27 2004-04-20 Миловзоров Дмитрий Евгеньевич Тонкие пленки гидрогенизированного поликристаллического кремния и технология их получения
JP2003188398A (ja) * 2001-12-18 2003-07-04 Mitsubishi Heavy Ind Ltd 光電変換装置及び結晶性Si薄膜の評価方法
WO2003105239A2 (de) * 2002-06-07 2003-12-18 Daimlerchrysler Ag Solarzelle und verfahren zur herstellung
JP2004134432A (ja) * 2002-10-08 2004-04-30 Sanyo Electric Co Ltd 光電変換装置
US20060237719A1 (en) * 2002-10-30 2006-10-26 Hewlett-Packard Development Company, L.P. Electronic components
RU2303830C2 (ru) * 2005-03-21 2007-07-27 Общество с ограниченной ответственностью "СОЛЭКС"(ООО "СОЛЭКС") Толстопленочный контакт кремниевого фотоэлектрического преобразователя и способ его получения
US20100075456A1 (en) * 2008-09-19 2010-03-25 Angel Sanjurjo Method and system for producing films for devices such as solar cells from semiconductor powders or dust
RU2009144623A (ru) * 2009-12-01 2011-06-10 Закрытое акционерное общество "Воронежский центр микроэлектроники" (RU) Солнечный элемент и способ его изготовления

Also Published As

Publication number Publication date
MD4377B1 (ro) 2015-10-31
MD20100068A2 (ro) 2011-11-30

Similar Documents

Publication Publication Date Title
Han et al. A study on pulse plating amorphous Ni–Mo alloy coating used as HER cathode in alkaline medium
KR101818085B1 (ko) 고내식성을 갖는 금속 다공체 및 그의 제조 방법
CN105256343B (zh) 一种基于氯化胆碱‑木糖醇低共熔溶剂的电镀锌方法
JP6246727B2 (ja) テクスチャ構造を有する熱膨張制御型フレキシブル金属基板材
Tian et al. Microstructure and properties of nanocrystalline nickel coatings prepared by pulse jet electrodeposition
KR20130027484A (ko) 동박의 표면처리방법, 표면처리된 동박, 및 리튬 이온 2차 전지의 음극 컬렉터용 동박
US20130323602A1 (en) Composite metal foil and production method therefor
Casciano et al. Corrosion resistance of electrodeposited Ni-Mo-W coatings
CN102254978A (zh) 一种用于太阳能光伏组件的锡铅焊带及其制造方法
JP5081481B2 (ja) 濡れ性に優れた銅箔及びその製造方法
IL194505A0 (en) Electroplating device and method
TW201807869A (zh) 電解銅箔、包含電解銅箔的電極、包含電解銅箔的蓄電池、以及電解銅箔的製造方法
Arai et al. Sn-Ag solder bump formation for flip-chip bonding by electroplating
Bui et al. Corrosion protection of ENIG surface finishing using electrochemical methods
MD4377B1 (ro) Convertor fotovoltaic semiconductor şi procedeu de fabricare a acestuia
CN102610829A (zh) 一种动力型铅酸电池无镉铜铝稀土合金板栅及其制备方法
JP2011204677A (ja) リチウムイオン二次電池の負極集電体用銅箔、その製造方法、及びリチウムイオン二次電池の負極電極、その製造方法
JP2012043747A (ja) 二次電池用電極とその製造方法
JP5019654B2 (ja) リチウムイオン二次電池の負極集電体用銅(合金)箔、その製造方法、及びリチウムイオン二次電池の負極電極、その製造方法
Balusamy et al. Effect of surface mechanical attrition treatment (SMAT) on the surface and electrochemical characteristics of Pb-Sn alloy
CN110184633B (zh) 一种铜铝复合材料表面金属膜的制备方法
Pan et al. Selective micro-etching of duplex stainless steel for preparing manganese oxide supercapacitor electrode
US10944113B1 (en) Electrode having protective and locking layers on current collector
Ueda et al. Surface finishing of Mg alloys by Al electroplating in AlCl3-EMIC ionic liquid
CN106906498A (zh) 一种氧化石墨烯锌复合电镀溶液及其制备方法和应用

Legal Events

Date Code Title Description
KA4A Patent for invention lapsed due to non-payment of fees (with right of restoration)
MM4A Patent for invention definitely lapsed due to non-payment of fees