MD4377C1 - Convertor fotovoltaic semiconductor şi procedeu de fabricare a acestuia - Google Patents
Convertor fotovoltaic semiconductor şi procedeu de fabricare a acestuiaInfo
- Publication number
- MD4377C1 MD4377C1 MDA20100068A MD20100068A MD4377C1 MD 4377 C1 MD4377 C1 MD 4377C1 MD A20100068 A MDA20100068 A MD A20100068A MD 20100068 A MD20100068 A MD 20100068A MD 4377 C1 MD4377 C1 MD 4377C1
- Authority
- MD
- Moldova
- Prior art keywords
- photoelectric converter
- current
- solder
- semiconductor layer
- semiconductor
- Prior art date
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
Abstract
Invenţia se referă la tehnica de conversie a energiei radiaţiei solare în energie electrică, în particular, la construcţia contactelor şi la compoziţia chimică a materialelor, utilizate la fabricarea elementelor conducătoare de curent şi semiconductoare ale convertorului fotovoltaic.Convertorul fotovoltaic semiconductor conţine un strat semiconductor, pe suprafaţa frontală a căruia sunt aplicate contacte metalice colectoare de curent şi un strat de adeziv organosilicic, iar pe suprafaţa opusă a stratului semiconductor este aplicat un strat de aliaj de lipit. Stratul semiconductor este executat din nanocristale de siliciu, planele cristalografice ale cărora sunt orientate într-o direcţie. Aliajul de lipit pe bază de cositor conţine stibiu în cantitate de 3...4% din masa aliajului. Contactele colectoare de curent sunt confecţionate din aliaj galvanic de fier-cobalt sau de fier-cadmiu, iar stratul de protecţie din adeziv organosilicic cu grosimea de 0,17…0,2 mm este aplicat pe toate suprafeţele convertorului.Procedeul de fabricare a convertorului fotovoltaic semiconductor constă în aceea că se orientează nanocristalele de siliciu prin rotirea unei surse de câmp electrostatic exterior în jurul stratului semiconductor şi se determină experimental unghiul sub care se fixează sursa de câmp electrostatic exterior. Se topeşte pelicula din aliaj de lipit pe bază de cositor aliat cu stibiu, se depun în aliaj nanocristalele de siliciu orientate cu alierea concomitentă a unei părţi de nanocristale cu stibiu şi se răceşte aliajul. Placa obţinută se cufundă într-o baie galvanică cu electrolit şi se efectuează tratarea anodică a suprafeţei frontale a stratului semiconductor în decurs de 25 s la densitatea de amplitudine a curentului de 55...60 A/dm2. Se fixează un şablon de suprafaţa frontală curăţită de oxizi şi de impurităţi a plăcii obţinute, se conectează placa cu catodul la o sursă de curent periodic cu impuls de retur reglabil după amplitudine şi după durată, şi la raportul amplitudinilor impulsului catodic şi celui anodic de curent egal cu 6:1, în decurs de 3 min se măreşte densitatea impulsului direct de la 0 până la 40 A/dm2 şi se depune aliajul galvanic în decurs de 12...20 min la raportul stabilit al curenţilor. Convertorul fotovoltaic obţinut se spală cu apă distilată la temperatura de ~330K, se usucă, se cufundă în adeziv organosilicic, se înlătură din vasul cu adeziv şi se usucă în dulapul de uscat la temperatura de 360K timp de 10 min.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
MDA20100068A MD4377C1 (ro) | 2010-05-19 | 2010-05-19 | Convertor fotovoltaic semiconductor şi procedeu de fabricare a acestuia |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
MDA20100068A MD4377C1 (ro) | 2010-05-19 | 2010-05-19 | Convertor fotovoltaic semiconductor şi procedeu de fabricare a acestuia |
Publications (3)
Publication Number | Publication Date |
---|---|
MD20100068A2 MD20100068A2 (ro) | 2011-11-30 |
MD4377B1 MD4377B1 (ro) | 2015-10-31 |
MD4377C1 true MD4377C1 (ro) | 2016-05-31 |
Family
ID=45815309
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MDA20100068A MD4377C1 (ro) | 2010-05-19 | 2010-05-19 | Convertor fotovoltaic semiconductor şi procedeu de fabricare a acestuia |
Country Status (1)
Country | Link |
---|---|
MD (1) | MD4377C1 (ro) |
Citations (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2507822A1 (fr) * | 1979-05-29 | 1982-12-17 | Photowatt International | Procede de fabrication de cellules solaires et cellules solaires correspondantes |
US5340410A (en) * | 1991-11-08 | 1994-08-23 | Siemens Aktiengesellschaft | Method for manufacturing polycrystalline silicon thin-film solar cells |
US5731213A (en) * | 1992-07-28 | 1998-03-24 | Kabushiki Kaisha Toshiba | Semiconductor light receiving device and method of manufacturing the same |
US5800611A (en) * | 1997-09-08 | 1998-09-01 | Christensen; Howard | Method for making large area single crystal silicon sheets |
RU2127472C1 (ru) * | 1996-03-28 | 1999-03-10 | Всероссийский научно-исследовательский институт электрификации сельского хозяйства | Способ изготовления полупроводникового фотопреобразователя |
RU2144718C1 (ru) * | 1999-06-24 | 2000-01-20 | Государственный научный центр РФ Институт медико-биологических проблем | Полупроводниковый фотопреобразователь солнечной энергии для космических аппаратов |
US6057507A (en) * | 1998-09-10 | 2000-05-02 | Jx Crystals Inc. | Coarse grain polycrystalline gallium antimonide thermophotovoltaic cell |
JP2002211996A (ja) * | 2000-11-15 | 2002-07-31 | Deutsche Solar Gmbh | 活性粒界の比率が低い多結晶性ケイ素 |
JP2003188398A (ja) * | 2001-12-18 | 2003-07-04 | Mitsubishi Heavy Ind Ltd | 光電変換装置及び結晶性Si薄膜の評価方法 |
WO2003105239A2 (de) * | 2002-06-07 | 2003-12-18 | Daimlerchrysler Ag | Solarzelle und verfahren zur herstellung |
RU2227343C2 (ru) * | 2001-11-27 | 2004-04-20 | Миловзоров Дмитрий Евгеньевич | Тонкие пленки гидрогенизированного поликристаллического кремния и технология их получения |
JP2004134432A (ja) * | 2002-10-08 | 2004-04-30 | Sanyo Electric Co Ltd | 光電変換装置 |
US20060237719A1 (en) * | 2002-10-30 | 2006-10-26 | Hewlett-Packard Development Company, L.P. | Electronic components |
RU2303830C2 (ru) * | 2005-03-21 | 2007-07-27 | Общество с ограниченной ответственностью "СОЛЭКС"(ООО "СОЛЭКС") | Толстопленочный контакт кремниевого фотоэлектрического преобразователя и способ его получения |
EP2136410A1 (en) * | 1997-08-21 | 2009-12-23 | Kaneka Corporation | Thin film photoelectric converter |
US20100075456A1 (en) * | 2008-09-19 | 2010-03-25 | Angel Sanjurjo | Method and system for producing films for devices such as solar cells from semiconductor powders or dust |
RU2009144623A (ru) * | 2009-12-01 | 2011-06-10 | Закрытое акционерное общество "Воронежский центр микроэлектроники" (RU) | Солнечный элемент и способ его изготовления |
-
2010
- 2010-05-19 MD MDA20100068A patent/MD4377C1/ro not_active IP Right Cessation
Patent Citations (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2507822A1 (fr) * | 1979-05-29 | 1982-12-17 | Photowatt International | Procede de fabrication de cellules solaires et cellules solaires correspondantes |
US5340410A (en) * | 1991-11-08 | 1994-08-23 | Siemens Aktiengesellschaft | Method for manufacturing polycrystalline silicon thin-film solar cells |
US5731213A (en) * | 1992-07-28 | 1998-03-24 | Kabushiki Kaisha Toshiba | Semiconductor light receiving device and method of manufacturing the same |
RU2127472C1 (ru) * | 1996-03-28 | 1999-03-10 | Всероссийский научно-исследовательский институт электрификации сельского хозяйства | Способ изготовления полупроводникового фотопреобразователя |
EP2136410A1 (en) * | 1997-08-21 | 2009-12-23 | Kaneka Corporation | Thin film photoelectric converter |
US5800611A (en) * | 1997-09-08 | 1998-09-01 | Christensen; Howard | Method for making large area single crystal silicon sheets |
US6057507A (en) * | 1998-09-10 | 2000-05-02 | Jx Crystals Inc. | Coarse grain polycrystalline gallium antimonide thermophotovoltaic cell |
RU2144718C1 (ru) * | 1999-06-24 | 2000-01-20 | Государственный научный центр РФ Институт медико-биологических проблем | Полупроводниковый фотопреобразователь солнечной энергии для космических аппаратов |
JP2002211996A (ja) * | 2000-11-15 | 2002-07-31 | Deutsche Solar Gmbh | 活性粒界の比率が低い多結晶性ケイ素 |
RU2227343C2 (ru) * | 2001-11-27 | 2004-04-20 | Миловзоров Дмитрий Евгеньевич | Тонкие пленки гидрогенизированного поликристаллического кремния и технология их получения |
JP2003188398A (ja) * | 2001-12-18 | 2003-07-04 | Mitsubishi Heavy Ind Ltd | 光電変換装置及び結晶性Si薄膜の評価方法 |
WO2003105239A2 (de) * | 2002-06-07 | 2003-12-18 | Daimlerchrysler Ag | Solarzelle und verfahren zur herstellung |
JP2004134432A (ja) * | 2002-10-08 | 2004-04-30 | Sanyo Electric Co Ltd | 光電変換装置 |
US20060237719A1 (en) * | 2002-10-30 | 2006-10-26 | Hewlett-Packard Development Company, L.P. | Electronic components |
RU2303830C2 (ru) * | 2005-03-21 | 2007-07-27 | Общество с ограниченной ответственностью "СОЛЭКС"(ООО "СОЛЭКС") | Толстопленочный контакт кремниевого фотоэлектрического преобразователя и способ его получения |
US20100075456A1 (en) * | 2008-09-19 | 2010-03-25 | Angel Sanjurjo | Method and system for producing films for devices such as solar cells from semiconductor powders or dust |
RU2009144623A (ru) * | 2009-12-01 | 2011-06-10 | Закрытое акционерное общество "Воронежский центр микроэлектроники" (RU) | Солнечный элемент и способ его изготовления |
Also Published As
Publication number | Publication date |
---|---|
MD4377B1 (ro) | 2015-10-31 |
MD20100068A2 (ro) | 2011-11-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
KA4A | Patent for invention lapsed due to non-payment of fees (with right of restoration) | ||
MM4A | Patent for invention definitely lapsed due to non-payment of fees |