MD4377C1 - Semiconductor photoelectric converter and method for manufacturing thereof - Google Patents

Semiconductor photoelectric converter and method for manufacturing thereof

Info

Publication number
MD4377C1
MD4377C1 MDA20100068A MD20100068A MD4377C1 MD 4377 C1 MD4377 C1 MD 4377C1 MD A20100068 A MDA20100068 A MD A20100068A MD 20100068 A MD20100068 A MD 20100068A MD 4377 C1 MD4377 C1 MD 4377C1
Authority
MD
Moldova
Prior art keywords
photoelectric converter
current
solder
semiconductor layer
semiconductor
Prior art date
Application number
MDA20100068A
Other languages
Romanian (ro)
Russian (ru)
Other versions
MD4377B1 (en
MD20100068A2 (en
Inventor
Вильгельм КОСОВ
Виктор КЛАУЗЕР
Татьяна КОСОВА
Александру МАТЮШЕНСКИЙ
Original Assignee
Вильгельм КОСОВ
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Вильгельм КОСОВ filed Critical Вильгельм КОСОВ
Priority to MDA20100068A priority Critical patent/MD4377C1/en
Publication of MD20100068A2 publication Critical patent/MD20100068A2/en
Publication of MD4377B1 publication Critical patent/MD4377B1/en
Publication of MD4377C1 publication Critical patent/MD4377C1/en

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

The invention relates to solar radiation-to-electric energy conversion technique, in particular to the design of contacts and the chemical composition of materials used in the manufacture of conductive and semiconductor elements of the photoelectric converter.The semiconductor photoelectric converter comprises a semiconductor layer, on the front surface of which are applied metal current-collecting contacts and a layer of organosilicon adhesive, and on the back surface is applied a solder layer. The semiconductor layer is made of silicon nanocrystals, the crystallographic planes of which are oriented in one direction. The tin-lead solder comprises antimony in an amount of 3…4% of the alloy weight. The current-collecting contacts are made of iron-cobalt or iron-cadmium galvanic alloy, and the protective coating of organosilicon adhesive of a thickness of 0.17…0.2 mm is applied on all surfaces of the converter.The method for manufacturing the semiconductor photoelectric converter consists in that silicon nanocrystals are oriented by rotating an external electrostatic field source around the semiconductor layer and is experimentally determined the angle under which is fixed the external electrostatic field source. It is melt the film of tin-lead solder, doped with antimony, are deposited the solder oriented silicon nanocrystals while concomitantly alloying one part of nanocrystals with antimony and the solder is cooled. The obtained plate is immersed in a plating bath with electrolyte and is carried out the anodic treatment of the front surface of the semiconductor layer for 25 s at a current density amplitude of 55…60 A/dm2. It is fixed a stencil to the cleaned from oxides and impurities front surface of the obtained plate, is cathodically connected the plate to a periodic current source with reverse amplitude and width adjustable pulse and at a ratio of the cathode and anode current pulse amplitudes equal to 6:1, for 3 min is increased the density of the direct pulse from 0 to 40 A/dm2 and is deposited the galvanic alloy during 12…20 min at the prescribed current ratio. The resulting photoelectric converter is washed with distilled water at a temperature of ~ 330K, dried, immersed in organosilicon adhesive, removed from the container with the adhesive and dried for 10 minutes in a drying room at a temperature of 360K.
MDA20100068A 2010-05-19 2010-05-19 Semiconductor photoelectric converter and method for manufacturing thereof MD4377C1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
MDA20100068A MD4377C1 (en) 2010-05-19 2010-05-19 Semiconductor photoelectric converter and method for manufacturing thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MDA20100068A MD4377C1 (en) 2010-05-19 2010-05-19 Semiconductor photoelectric converter and method for manufacturing thereof

Publications (3)

Publication Number Publication Date
MD20100068A2 MD20100068A2 (en) 2011-11-30
MD4377B1 MD4377B1 (en) 2015-10-31
MD4377C1 true MD4377C1 (en) 2016-05-31

Family

ID=45815309

Family Applications (1)

Application Number Title Priority Date Filing Date
MDA20100068A MD4377C1 (en) 2010-05-19 2010-05-19 Semiconductor photoelectric converter and method for manufacturing thereof

Country Status (1)

Country Link
MD (1) MD4377C1 (en)

Citations (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2507822A1 (en) * 1979-05-29 1982-12-17 Photowatt International Polycrystalline silicon solar cells prodn. - by exposing to unipolar microwaves to diffuse dopant
US5340410A (en) * 1991-11-08 1994-08-23 Siemens Aktiengesellschaft Method for manufacturing polycrystalline silicon thin-film solar cells
US5731213A (en) * 1992-07-28 1998-03-24 Kabushiki Kaisha Toshiba Semiconductor light receiving device and method of manufacturing the same
US5800611A (en) * 1997-09-08 1998-09-01 Christensen; Howard Method for making large area single crystal silicon sheets
RU2127472C1 (en) * 1996-03-28 1999-03-10 Всероссийский научно-исследовательский институт электрификации сельского хозяйства Method for production of semiconductor photodetector
RU2144718C1 (en) * 1999-06-24 2000-01-20 Государственный научный центр РФ Институт медико-биологических проблем Semiconductor photoelectric solar energy converter for space vehicles
US6057507A (en) * 1998-09-10 2000-05-02 Jx Crystals Inc. Coarse grain polycrystalline gallium antimonide thermophotovoltaic cell
JP2002211996A (en) * 2000-11-15 2002-07-31 Deutsche Solar Gmbh Polycrystalline silicon containing active grain boundary in low percentage
JP2003188398A (en) * 2001-12-18 2003-07-04 Mitsubishi Heavy Ind Ltd Photoelectric converting apparatus and evaluating method for crystalline silicon thin film
WO2003105239A2 (en) * 2002-06-07 2003-12-18 Daimlerchrysler Ag Solar cell and method for production thereof
RU2227343C2 (en) * 2001-11-27 2004-04-20 Миловзоров Дмитрий Евгеньевич Thin films of hydrogenized polycrystalline silicon and technology of their production
JP2004134432A (en) * 2002-10-08 2004-04-30 Sanyo Electric Co Ltd Photoelectric converter
US20060237719A1 (en) * 2002-10-30 2006-10-26 Hewlett-Packard Development Company, L.P. Electronic components
RU2303830C2 (en) * 2005-03-21 2007-07-27 Общество с ограниченной ответственностью "СОЛЭКС"(ООО "СОЛЭКС") Thick-film contact of silicon photoelectric converter and its manufacturing process
EP2136410A1 (en) * 1997-08-21 2009-12-23 Kaneka Corporation Thin film photoelectric converter
US20100075456A1 (en) * 2008-09-19 2010-03-25 Angel Sanjurjo Method and system for producing films for devices such as solar cells from semiconductor powders or dust
RU2009144623A (en) * 2009-12-01 2011-06-10 Закрытое акционерное общество "Воронежский центр микроэлектроники" (RU) SOLAR ELEMENT AND METHOD FOR ITS MANUFACTURE

Patent Citations (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2507822A1 (en) * 1979-05-29 1982-12-17 Photowatt International Polycrystalline silicon solar cells prodn. - by exposing to unipolar microwaves to diffuse dopant
US5340410A (en) * 1991-11-08 1994-08-23 Siemens Aktiengesellschaft Method for manufacturing polycrystalline silicon thin-film solar cells
US5731213A (en) * 1992-07-28 1998-03-24 Kabushiki Kaisha Toshiba Semiconductor light receiving device and method of manufacturing the same
RU2127472C1 (en) * 1996-03-28 1999-03-10 Всероссийский научно-исследовательский институт электрификации сельского хозяйства Method for production of semiconductor photodetector
EP2136410A1 (en) * 1997-08-21 2009-12-23 Kaneka Corporation Thin film photoelectric converter
US5800611A (en) * 1997-09-08 1998-09-01 Christensen; Howard Method for making large area single crystal silicon sheets
US6057507A (en) * 1998-09-10 2000-05-02 Jx Crystals Inc. Coarse grain polycrystalline gallium antimonide thermophotovoltaic cell
RU2144718C1 (en) * 1999-06-24 2000-01-20 Государственный научный центр РФ Институт медико-биологических проблем Semiconductor photoelectric solar energy converter for space vehicles
JP2002211996A (en) * 2000-11-15 2002-07-31 Deutsche Solar Gmbh Polycrystalline silicon containing active grain boundary in low percentage
RU2227343C2 (en) * 2001-11-27 2004-04-20 Миловзоров Дмитрий Евгеньевич Thin films of hydrogenized polycrystalline silicon and technology of their production
JP2003188398A (en) * 2001-12-18 2003-07-04 Mitsubishi Heavy Ind Ltd Photoelectric converting apparatus and evaluating method for crystalline silicon thin film
WO2003105239A2 (en) * 2002-06-07 2003-12-18 Daimlerchrysler Ag Solar cell and method for production thereof
JP2004134432A (en) * 2002-10-08 2004-04-30 Sanyo Electric Co Ltd Photoelectric converter
US20060237719A1 (en) * 2002-10-30 2006-10-26 Hewlett-Packard Development Company, L.P. Electronic components
RU2303830C2 (en) * 2005-03-21 2007-07-27 Общество с ограниченной ответственностью "СОЛЭКС"(ООО "СОЛЭКС") Thick-film contact of silicon photoelectric converter and its manufacturing process
US20100075456A1 (en) * 2008-09-19 2010-03-25 Angel Sanjurjo Method and system for producing films for devices such as solar cells from semiconductor powders or dust
RU2009144623A (en) * 2009-12-01 2011-06-10 Закрытое акционерное общество "Воронежский центр микроэлектроники" (RU) SOLAR ELEMENT AND METHOD FOR ITS MANUFACTURE

Also Published As

Publication number Publication date
MD4377B1 (en) 2015-10-31
MD20100068A2 (en) 2011-11-30

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Legal Events

Date Code Title Description
KA4A Patent for invention lapsed due to non-payment of fees (with right of restoration)
MM4A Patent for invention definitely lapsed due to non-payment of fees