MD3086G2 - Senzor de gaze pe semiconductori - Google Patents

Senzor de gaze pe semiconductori

Info

Publication number
MD3086G2
MD3086G2 MDA20050233A MD20050233A MD3086G2 MD 3086 G2 MD3086 G2 MD 3086G2 MD A20050233 A MDA20050233 A MD A20050233A MD 20050233 A MD20050233 A MD 20050233A MD 3086 G2 MD3086 G2 MD 3086G2
Authority
MD
Moldova
Prior art keywords
onto
gas
gas sensor
semiconductor gas
sensitive layer
Prior art date
Application number
MDA20050233A
Other languages
English (en)
Russian (ru)
Other versions
MD3086F1 (ro
Inventor
Вячеслав ПОПА
Олеся ВОЛЧУК
Ион ТИГИНЯНУ
Вячеслав УРСАКИ
Original Assignee
Институт Прикладной Физики Академии Наук Молдовы
Технический университет Молдовы
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Институт Прикладной Физики Академии Наук Молдовы, Технический университет Молдовы filed Critical Институт Прикладной Физики Академии Наук Молдовы
Priority to MDA20050233A priority Critical patent/MD3086G2/ro
Publication of MD3086F1 publication Critical patent/MD3086F1/ro
Publication of MD3086G2 publication Critical patent/MD3086G2/ro

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Abstract

Invenţia se referă la tehnica semiconductorilor, în particular la senzori de gaze pe semiconductori.Senzorul de gaze pe semiconductori include un substrat, pe una din suprafeţele căruia este depus un strat sensibil la gaze, iar pe suprafaţa opusă un element încălzitor, totodată pe stratul sensibil la gaze sunt depuse nişte contacte metalice. Noutatea invenţiei constă în aceea că pe suprafaţa stratului sensibil la gaze este formată o regiune cu structură de tip nanoace. Regiunea cu structură de tip nanoace poate avea o formă inelară.
MDA20050233A 2005-08-10 2005-08-10 Senzor de gaze pe semiconductori MD3086G2 (ro)

Priority Applications (1)

Application Number Priority Date Filing Date Title
MDA20050233A MD3086G2 (ro) 2005-08-10 2005-08-10 Senzor de gaze pe semiconductori

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MDA20050233A MD3086G2 (ro) 2005-08-10 2005-08-10 Senzor de gaze pe semiconductori

Publications (2)

Publication Number Publication Date
MD3086F1 MD3086F1 (ro) 2006-06-30
MD3086G2 true MD3086G2 (ro) 2007-01-31

Family

ID=36643910

Family Applications (1)

Application Number Title Priority Date Filing Date
MDA20050233A MD3086G2 (ro) 2005-08-10 2005-08-10 Senzor de gaze pe semiconductori

Country Status (1)

Country Link
MD (1) MD3086G2 (ro)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD3894G2 (ro) * 2008-02-22 2010-01-31 Государственный Университет Молд0 Sesizor de gaze în baza semiconductorilor halcogenici sticloşi
MD4347C1 (ro) * 2014-07-15 2015-11-30 Виорел ТРОФИМ Senzor de gaze pe bază de MoO3

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD4423C1 (ro) * 2015-01-13 2016-12-31 Василе ПОСТИКА Senzor de gaze pe baza oxizilor semiconductori (variante)
MD4495C1 (ro) * 2016-09-09 2018-01-31 Николай АБАБИЙ Senzor de etanol pe bază de oxid de cupru

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3695848A (en) * 1970-04-07 1972-10-03 Naoyoshi Taguchi Gas detecting device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3695848A (en) * 1970-04-07 1972-10-03 Naoyoshi Taguchi Gas detecting device

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
A. El. Kouche, J. Lin, M. E. Law, S. Kim, B. S. Kim, F. Ren and S. J. Pearton, Remote sensing system for hydrogen using GaN Schottky diodes. Sensors and Actuators, B 105, Issue 2, 2005, p. 329-333 *
J. Kim, F. Ren, B. P. Gila, C. R. Abernathy and S. J. Pearton, Reversible barrier height changes in hydrogen-sensitive Pd/GaN and Pt/GaN diodes. Appl. Phys. Lett., 82, Issue 5, 2003, p. 739-741 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD3894G2 (ro) * 2008-02-22 2010-01-31 Государственный Университет Молд0 Sesizor de gaze în baza semiconductorilor halcogenici sticloşi
MD4347C1 (ro) * 2014-07-15 2015-11-30 Виорел ТРОФИМ Senzor de gaze pe bază de MoO3

Also Published As

Publication number Publication date
MD3086F1 (ro) 2006-06-30

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Legal Events

Date Code Title Description
KA4A Patent for invention lapsed due to non-payment of fees (with right of restoration)
MM4A Patent for invention definitely lapsed due to non-payment of fees