MD1065Z - Device and method for measuring the resistance of sensors based on nanostructured semiconductor oxides - Google Patents
Device and method for measuring the resistance of sensors based on nanostructured semiconductor oxides Download PDFInfo
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- MD1065Z MD1065Z MDS20150148A MDS20150148A MD1065Z MD 1065 Z MD1065 Z MD 1065Z MD S20150148 A MDS20150148 A MD S20150148A MD S20150148 A MDS20150148 A MD S20150148A MD 1065 Z MD1065 Z MD 1065Z
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 7
- 238000000034 method Methods 0.000 title claims abstract description 6
- 238000011835 investigation Methods 0.000 claims 2
- 238000005259 measurement Methods 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 239000002086 nanomaterial Substances 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000002073 nanorod Substances 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Abstract
Description
Invenţia se referă la domeniul tehnicii de măsurare şi poate fi utilizată în aparate de măsurat, în care se utilizează senzori pe bază de oxizi semiconductori nanostructuraţi. The invention relates to the field of measurement technology and can be used in measuring devices, in which sensors based on nanostructured semiconductor oxides are used.
Este cunoscut un dispozitiv de măsurare a rezistenţei senzorilor bazat pe legea lui Ohm pentru circuite electrice sau punţi de măsurare, care include măsurarea rezistenţei active pe curent continuu cu ajutorul ohmmetrului digital, galvanometrului diferenţial şi potenţiometrului curentului continuu [1]. A sensor resistance measuring device based on Ohm's law for electrical circuits or measuring bridges is known, which includes measuring the active resistance on direct current using a digital ohmmeter, differential galvanometer and direct current potentiometer [1].
Cea mai apropiată soluţie este interfaţa analog-digitală de precizie pentru lucru cu senzorii micro- şi nanorezistivi, care conţin punţi de măsurare, ieşirile diagonalei de putere fiind conectate la sursa de tensiune, iar ieşirile diagonalei de măsurare fiind conectate cu intrările diferenţiale ale amplificatoarelor instrumentale [2]. The closest solution is the precision analog-digital interface for working with micro- and nanoresistive sensors, which contain measurement bridges, the outputs of the power diagonal being connected to the voltage source, and the outputs of the measurement diagonal being connected to the differential inputs of the instrumental amplifiers [2].
Un dezavantaj comun al acestor dispozitive este că pentru măsurarea rezistenţelor cu valori mari ale micro- şi nanostructurilor este necesar de utilizat amplificatoare instrumentale diferenţiale cu rezistenţele de intrare foarte mari (US 8263002 B1 2012.09.11; Oleg Lupan, Guangyu Chai, Lee Chow. Novel hydrogen gas sensor based on single ZnO nanorod, Microelectronic Engineering, Volume 85, Issue 11, November 2008, p. 2220-2225; O. Lupan, V.V. Ursaki, G. Chai, L. Chow. Selective hydrogen gas nanosensor using individual ZnO nanowire with fast response at room temperature, Sensors and Actuators B: Chemical, Volume 144, Issue 1, 29 January 2010, p. 56-66). A common disadvantage of these devices is that for measuring high resistance values of micro- and nanostructures it is necessary to use differential instrumental amplifiers with very high input resistances (US 8263002 B1 2012.09.11; Oleg Lupan, Guangyu Chai, Lee Chow. Novel hydrogen gas sensor based on single ZnO nanorod, Microelectronic Engineering, Volume 85, Issue 11, November 2008, p. 2220-2225; O. Lupan, V.V. Ursaki, G. Chai, L. Chow. Selective hydrogen gas nanosensor using individual ZnO nanowire with fast response at room temperature, Sensors and Actuators B: Chemical, Volume 144, Issue 1, 29 January 2010, p. 56-66).
Problema pe care o rezolvă invenţia constă în elaborarea unui dispozitiv care ar permite de a măsura rezistenţa mare la micro- şi nanostructuri folosind amplificatoare diferenţiale de uz general. The problem solved by the invention consists in developing a device that would allow measuring high resistance in micro- and nanostructures using general-purpose differential amplifiers.
Dispozitivul, conform invenţiei, înlătură dezavantajul menţionat mai sus prin aceea că include o sursă de tensiune de referinţă 1 conectată la un voltmetru 6 şi unită în serie cu senzorul nanostructurat cercetat 2 şi cu un rezistor suplimentar 3, la nodul de conectare a căruia cu senzorul 2 este conectată intrarea unui amplificator 4; ieşirea amplificatorului 4 este conectată la un voltmetru 5, totodată rezistorul 3, nodurile comune ale sursei de tensiune de referinţă 1, amplificatorul 4 şi voltmetrele 5 şi 6 sunt conectate la masă. The device, according to the invention, eliminates the above-mentioned disadvantage by including a reference voltage source 1 connected to a voltmeter 6 and connected in series with the investigated nanostructured sensor 2 and with an additional resistor 3, to the connection node of which the input of an amplifier 4 is connected with the sensor 2; the output of the amplifier 4 is connected to a voltmeter 5, while the resistor 3, the common nodes of the reference voltage source 1, the amplifier 4 and the voltmeters 5 and 6 are connected to ground.
Metoda, conform invenţiei, înlătură dezavantajul menţionat mai sus prin aceea că se măsoară tensiunea U1 a sursei de tensiune de referinţă, se măsoară tensiunea U3 pe rezistorul suplimentar, se calculează valoarea tensiunii, care cade pe senzorul cercetat, conform formulei Ux=U1-U3, şi se calculează valoarea curentului, care trece prin senzorul cercetat, conform formulei Ix=U3/R3, iar calcularea valorii rezistenţei senzorului Rx se efectuează conform legii lui Ohm, utilizând valorile obţinute Ux şi Ix. The method, according to the invention, eliminates the above-mentioned disadvantage by measuring the voltage U1 of the reference voltage source, measuring the voltage U3 on the additional resistor, calculating the value of the voltage that falls on the investigated sensor, according to the formula Ux=U1-U3, and calculating the value of the current that passes through the investigated sensor, according to the formula Ix=U3/R3, and calculating the value of the sensor resistance Rx is performed according to Ohm's law, using the obtained values Ux and Ix.
Rezultatul invenţiei constă în eliminarea influenţei rezistenţelor de intrare ale amplificatoarelor de instrumentaţie asupra rezultatelor măsurate. The result of the invention consists in eliminating the influence of the input resistances of the instrumentation amplifiers on the measured results.
Invenţia se descrie prin desenul din figură, în care este prezentată schema-bloc a dispozitivului de măsurare a rezistenţei senzorilor, realizată cu ajutorul metodei corespunzătoare. Aceasta conţine conectarea în serie a sursei de tensiune de referinţă 1, a senzorului măsurat 2 RX şi a rezistorului suplimentar la nodul de conectare, unde este conectat senzorul nanostructurat cu intrările amplificatorului 4, iar ieşirea lui este conectată cu intrarea voltmetrului 5, voltmetrul 6 este conectat la sursa de tensiune de referinţă, în afară de aceasta, rezistorul 3, nodurile comune ale sursei de tensiune de referinţă 1, amplificatorului 4, voltmetrelor 5 şi 6 sunt conectate la masă. The invention is described by the drawing in the figure, which shows the block diagram of the device for measuring the resistance of sensors, made using the appropriate method. It contains the series connection of the reference voltage source 1, the measured sensor 2 RX and the additional resistor at the connection node, where the nanostructured sensor is connected to the inputs of the amplifier 4, and its output is connected to the input of the voltmeter 5, the voltmeter 6 is connected to the reference voltage source, in addition, the resistor 3, the common nodes of the reference voltage source 1, the amplifier 4, the voltmeters 5 and 6 are connected to the ground.
Procesul de măsurare a rezistenţei senzorului micro- şi nanostructurat se efectuează în felul următor: la prima etapă se măsoară tensiunea pe rezistorul suplimentar 3, Ur3, care este egală cu tensiunea măsurată de voltmetrul 4, Uv4, împărţită la coeficientul de amplificare a amplificatorului 4, Ku4: The process of measuring the resistance of the micro- and nanostructured sensor is performed as follows: in the first stage, the voltage on the additional resistor 3, Ur3, is measured, which is equal to the voltage measured by the voltmeter 4, Uv4, divided by the amplification coefficient of the amplifier 4, Ku4:
Ur3=Uv4/Ku4 (1) Ur3=Uv4/Ku4 (1)
La etapa a doua se măsoară tensiunea pe senzorul nanostructurat, care este egală cu tensiunea sursei de tensiune de referinţă 1 măsurată cu voltmetrul 6, U6, cu scăderea tensiunii pe rezistorul suplimentar 3: In the second stage, the voltage on the nanostructured sensor is measured, which is equal to the voltage of the reference voltage source 1 measured with voltmeter 6, U6, with the voltage drop across the additional resistor 3:
Urx=U6-Ur3 (2) Urx=U6-Ur3 (2)
La etapa a treia se calculează valoarea curentului, care trece prin senzorul nanostructurat: In the third stage, the value of the current passing through the nanostructured sensor is calculated:
Irx=Ur3/R3 (3) Irx=Ur3/R3 (3)
La etapa a patra se calculează valoarea rezistenţei senzorului nanostructurat: In the fourth step, the resistance value of the nanostructured sensor is calculated:
Rx=Urx/Irx=(U6-Ur3)·R4/Ur3=(Uv6·Ku4-Uv5)·R3/Uv5 (4) Rx=Urx/Irx=(U6-Ur3)·R4/Ur3=(Uv6·Ku4-Uv5)·R3/Uv5 (4)
În calitate de exemplu de utilizare în practică se poate folosi punerea în aplicare a cazului cu următorii parametri ai elementelor: valoarea sursei de tensiune de referinţă U6=30 V, rezistenţa rezistorului suplimentar 3, R3=1000 Ω, datele voltmetrului 5, U5=20 V, datele voltmetrului 6, U6=29,98 V: As an example of practical use, the implementation of the case with the following parameters of the elements can be used: the value of the reference voltage source U6=30 V, the resistance of the additional resistor 3, R3=1000 Ω, the data of the voltmeter 5, U5=20 V, the data of the voltmeter 6, U6=29.98 V:
Rx=(29,98·1000-20)·1000/20=1498000 Ω Rx=(29.98·1000-20)·1000/20=1498000 Ω
1. Лозицкий Б.Н., Мельниченко И. И. Радиотехника, Электрорадиоизмерения, Энергия, Москва, 1976, с.193-194 1. Лозицкий Б.Н., Мельниченко И. Радиотехника, Електрорадиоизмерия, Москва, 1976, p.193-194
2. RU 2541723 C1 2015.02.20 2. RU 2541723 C1 2015.02.20
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| Application Number | Priority Date | Filing Date | Title |
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| MDS20150148A MD1065Z (en) | 2015-11-09 | 2015-11-09 | Device and method for measuring the resistance of sensors based on nanostructured semiconductor oxides |
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| MDS20150148A MD1065Z (en) | 2015-11-09 | 2015-11-09 | Device and method for measuring the resistance of sensors based on nanostructured semiconductor oxides |
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| MD1065Y MD1065Y (en) | 2016-08-31 |
| MD1065Z true MD1065Z (en) | 2017-03-31 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SU1597802A1 (en) * | 1987-04-17 | 1990-10-07 | Институт радиофизики и электроники АН АрмССР | Apparatus for measuring parameters of power supply sources |
| RU19420U1 (en) * | 2001-05-18 | 2001-08-27 | Общество с ограниченной ответственностью "Связьприбор" | DEVICE FOR MEASURING ELECTRICAL PARAMETERS AND DETERMINING THE PLACE OF DAMAGE TO CABLE LINES |
| US8263002B1 (en) * | 2008-05-16 | 2012-09-11 | University Of Central Florida Research Foundation, Inc. | Fabrication of ZnO nanorod-based hydrogen gas nanosensor |
| RU2541723C1 (en) * | 2013-09-17 | 2015-02-20 | Федеральное Государственное Бюджетное Образовательное Учреждение Высшего Профессионального Образования "Донской Государственный Технический Университет" (Дгту) | Precision analogue-digital interface for working with resistive micro- and nanospheres |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SU1597802A1 (en) * | 1987-04-17 | 1990-10-07 | Институт радиофизики и электроники АН АрмССР | Apparatus for measuring parameters of power supply sources |
| RU19420U1 (en) * | 2001-05-18 | 2001-08-27 | Общество с ограниченной ответственностью "Связьприбор" | DEVICE FOR MEASURING ELECTRICAL PARAMETERS AND DETERMINING THE PLACE OF DAMAGE TO CABLE LINES |
| US8263002B1 (en) * | 2008-05-16 | 2012-09-11 | University Of Central Florida Research Foundation, Inc. | Fabrication of ZnO nanorod-based hydrogen gas nanosensor |
| RU2541723C1 (en) * | 2013-09-17 | 2015-02-20 | Федеральное Государственное Бюджетное Образовательное Учреждение Высшего Профессионального Образования "Донской Государственный Технический Университет" (Дгту) | Precision analogue-digital interface for working with resistive micro- and nanospheres |
Non-Patent Citations (3)
| Title |
|---|
| O. Lupan, V.V. Ursaki, G. Chai, L. Chow. Selective hydrogen gas nanosensor using individual ZnO nanowire with fast response at room temperature, Sensors and Actuators B: Chemical, Volume 144, Issue 1, 29 January 2010, Pages 56–66 * |
| Oleg Lupan, Guangyu Chai, Lee Chow. Novel hydrogen gas sensor based on single ZnO nanorod, Microelectronic Engineering, Volume 85, Issue 11, November 2008, Pages 2220-2225 * |
| Лозицкий Б.Н., Мельниченко И. И. Радиотехника, Электрорадиоизмерения, Энергия, Москва, 1976, с.193-194 * |
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