MD1023Z - Device for measuring the parameters of sensors based on micro- and nanostructured semiconductor oxides - Google Patents
Device for measuring the parameters of sensors based on micro- and nanostructured semiconductor oxides Download PDFInfo
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- MD1023Z MD1023Z MDS20150147A MDS20150147A MD1023Z MD 1023 Z MD1023 Z MD 1023Z MD S20150147 A MDS20150147 A MD S20150147A MD S20150147 A MDS20150147 A MD S20150147A MD 1023 Z MD1023 Z MD 1023Z
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 5
- 239000002086 nanomaterial Substances 0.000 claims abstract description 6
- 238000010586 diagram Methods 0.000 description 4
- 101100434411 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) ADH1 gene Proteins 0.000 description 3
- 101150102866 adc1 gene Proteins 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000002073 nanorod Substances 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Abstract
Description
Invenţia se referă la domeniul tehnicii de măsurare şi poate fi utilizată în aparate de măsurat, în care se utilizează senzori pe bază de oxizi semiconductori nanostructuraţi. The invention relates to the field of measurement technology and can be used in measuring devices, in which sensors based on nanostructured semiconductor oxides are used.
Este cunoscut un dispozitiv de măsurare a rezistenţei senzorilor bazat pe legea lui Ohm pentru circuite electrice sau punţi de măsurare, care include măsurarea rezistenţei active pe curent continuu cu ajutorul ohmmetrului digital, galvanometrului diferenţial şi potenţiometrului curentului continuu [1]. A sensor resistance measuring device based on Ohm's law for electrical circuits or measuring bridges is known, which includes measuring the active resistance on direct current using a digital ohmmeter, differential galvanometer and direct current potentiometer [1].
Cea mai apropiată soluţie este interfaţa analog-digitală de precizie pentru lucru cu senzorii micro- şi nanorezistivi, care conţin punţi de măsurare, ieşirile diagonalei de putere fiind conectate la sursa de tensiune, iar ieşirile diagonalei de măsurare fiind conectate cu intrările diferenţiale ale amplificatoarelor instrumentale [2]. The closest solution is the precision analog-digital interface for working with micro- and nanoresistive sensors, which contain measurement bridges, the outputs of the power diagonal being connected to the voltage source, and the outputs of the measurement diagonal being connected to the differential inputs of the instrumental amplifiers [2].
Un dezavantaj comun al acestor dispozitive este că pentru măsurarea rezistenţelor cu valori mari ale micro- şi nanostructurilor este necesar de utilizat amplificatoare instrumentale diferenţiale cu rezistenţele de intrare foarte mari (US 8263002 B1 2012.09.11; Oleg Lupan, Guangyu Chai, Lee Chow. Novel hydrogen gas sensor based on single ZnO nanorod, Microelectronic Engineering, Volume 85, Issue 11, November 2008, p. 2220-2225; O. Lupan, V.V. Ursaki, G. Chai, L. Chow. Selective hydrogen gas nanosensor using individual ZnO nanowire with fast response at room temperature, Sensors and Actuators B: Chemical, Volume 144, Issue 1, 29 January 2010, p. 56-66). A common disadvantage of these devices is that for measuring high resistance values of micro- and nanostructures it is necessary to use differential instrumental amplifiers with very high input resistances (US 8263002 B1 2012.09.11; Oleg Lupan, Guangyu Chai, Lee Chow. Novel hydrogen gas sensor based on single ZnO nanorod, Microelectronic Engineering, Volume 85, Issue 11, November 2008, p. 2220-2225; O. Lupan, V.V. Ursaki, G. Chai, L. Chow. Selective hydrogen gas nanosensor using individual ZnO nanowire with fast response at room temperature, Sensors and Actuators B: Chemical, Volume 144, Issue 1, 29 January 2010, p. 56-66).
Problema pe care o rezolvă invenţia constă în elaborarea unui dispozitiv, care ar permite de a măsura rezistenţa mare la micro- şi nanostructuri folosind amplificatoare diferenţiale de uz general. The problem solved by the invention consists in developing a device that would allow measuring high resistance in micro- and nanostructures using general-purpose differential amplifiers.
Dispozitivul, conform invenţiei, înlătură dezavantajul menţionat mai sus prin aceea că include o sursă de tensiune de referinţă (Uref), tensiunea căreia se aplică la intrarea unuia din convertorii analogic-digitali (ADC) ai unui microcontroler (MCU) printr-un amplificator operaţional, şi care este conectată în serie cu o nanostructură cercetată (Rx) şi un rezistor suplimentar (R0), iar căderea de tensiune de pe rezistorul suplimentar (R0) se aplică la intrarea unui al doilea convertor analogic-digital (ADC) al microcontrolerului (MCU) prin cel de-al doilea amplificator operaţional; ieşirea microcontrolerului (MCU) este conectată la un ecran pentru afişarea rezultatelor obţinute. The device, according to the invention, eliminates the aforementioned disadvantage by including a reference voltage source (Uref), the voltage of which is applied to the input of one of the analog-to-digital converters (ADC) of a microcontroller (MCU) through an operational amplifier, and which is connected in series with a researched nanostructure (Rx) and an additional resistor (R0), and the voltage drop across the additional resistor (R0) is applied to the input of a second analog-to-digital converter (ADC) of the microcontroller (MCU) through the second operational amplifier; the output of the microcontroller (MCU) is connected to a screen for displaying the obtained results.
Rezultatul invenţiei constă în eliminarea influenţei rezistenţelor de intrare ale amplificatoarelor de instrumentaţie asupra rezultatelor măsurate. The result of the invention consists in eliminating the influence of the input resistances of the instrumentation amplifiers on the measured results.
Invenţia se explică prin desenele din fig. 1-2, care reprezintă: The invention is explained by the drawings in Fig. 1-2, which represent:
- fig. 1, schema-bloc a dispozitivului; - Fig. 1, block diagram of the device;
- fig. 2, schema de principiu a dispozitivului. - Fig. 2, schematic diagram of the device.
Schema-bloc include: o sursă de tensiune de referinţă Uref, care este destinată pentru generarea tensiunii termoindependente furnizate în circuitul de măsurare, senzorul cercetat Rx, un rezistor stabil suplimentar R0 se utilizează pentru măsurarea curentului, care curge prin senzorul cercetat, amplificatoare de curent continuu conduc tensiunile măsurate la nivelele necesare pentru funcţionarea stabilă a convertoarelor analog-digitale (ADC), convertoarele analog-digitale (ADC), de obicei integrate în microcontroler (MCU), se utilizează pentru convertirea tensiunii măsurate în formă digitală, ceea ce este necesar pentru prelucrarea ulterioară a datelor de către microcontrolerul, care prelucrează datele primite, calculează valoarea rezistenţei senzorului cercetat şi o transformă în coduri transmise la indicator, indicatorul afişează valoarea calculată a rezistenţei senzorului. The block diagram includes: a reference voltage source Uref, which is intended for generating the temperature-independent voltage supplied to the measuring circuit, the investigated sensor Rx, an additional stable resistor R0 is used to measure the current flowing through the investigated sensor, DC amplifiers drive the measured voltages to the levels necessary for the stable operation of analog-to-digital converters (ADC), analog-to-digital converters (ADC), usually integrated into the microcontroller (MCU), are used to convert the measured voltage into digital form, which is necessary for further data processing by the microcontroller, which processes the received data, calculates the resistance value of the investigated sensor and converts it into codes transmitted to the indicator, the indicator displays the calculated value of the sensor resistance.
Schema de principiu a dispozitivului este prezentată în fig. 2. Structura cercetată Rx, împreună cu rezistenţa calibrată în serie R0, sunt conectate la sursa de referinţă B1. Tensiunea sursei UB1 şi căderea de tensiune pe rezistenţa calibrată UR0 se amplifică şi se limitează cu ajutorul amplificatoarelor operaţionale U2:A şi U2:B într-un diapazon de la 0 V la 5 V, ceea ce este necesar pentru lucrul convertorului analogic-digital, şi ajung la intrările ADC0 şi ADC1 ale microcontrolerului U1. Valoarea rezistenţei calculate a senzorului se converteşte în coduri de control pentru indicatorul cu şapte segmente. Ieşirile portului C (PC0-PC7) ale microcontrolerului U1 determină cifra afişată, iar ieşirile PD0-PD3 ale portului D comutează ieşirile indicatorului, care lucrează în regim dinamic. Elementele X1, C1, C2 intră în componenţa generatorului din cuarţ, R1 şi C3 sunt necesare pentru resetarea microprocesorului. Butoanele de control 1 şi 2 sunt folosite pentru selectarea regimului de lucru al dispozitivului. The schematic diagram of the device is shown in Fig. 2. The investigated structure Rx, together with the series calibrated resistor R0, are connected to the reference source B1. The voltage of the source UB1 and the voltage drop across the calibrated resistor UR0 are amplified and limited by the operational amplifiers U2:A and U2:B in the range from 0 V to 5 V, which is necessary for the operation of the analog-to-digital converter, and reach the ADC0 and ADC1 inputs of the microcontroller U1. The calculated sensor resistance value is converted into control codes for the seven-segment indicator. The outputs of port C (PC0-PC7) of the microcontroller U1 determine the displayed digit, and the outputs PD0-PD3 of port D switch the outputs of the indicator, which works in dynamic mode. The elements X1, C1, C2 are part of the quartz generator, R1 and C3 are needed to reset the microprocessor. Control buttons 1 and 2 are used to select the device's operating mode.
Exemplu de realizare Example of implementation
Tensiunea de referinţă U1 de pe sursa B1 se aplică la intrarea ADC0 a convertorului analogic-digital al microcontrolerului prin amplificatorul operaţional U2:A cu un coeficient de amplificare K1=R2/R3=1. La intrarea ADC1 a convertorului analogic-digital al microcontrolerului, prin amplificatorul operaţional U2:B cu coeficientul de amplificare К2=R6/R9=160, se aplică căderea de tensiune U2 de pe rezistorul etalon R0. În cazul analizat, tensiunea de la intrarea ADC0 a microcontrolerului constituie U1=1,2 V, iar tensiunea de la intrarea ADC1 U2=0,4 V. După conversia valorilor acestor tensiuni în format digital se realizează calculul valorii rezistenţei măsurate a nanostructurii conform expresiei : The reference voltage U1 from the source B1 is applied to the input ADC0 of the microcontroller's analog-to-digital converter through the operational amplifier U2:A with an amplification coefficient K1=R2/R3=1. At the input ADC1 of the microcontroller's analog-to-digital converter, through the operational amplifier U2:B with the amplification coefficient К2=R6/R9=160, the voltage drop U2 on the standard resistor R0 is applied. In the analyzed case, the voltage at the microcontroller's ADC0 input is U1=1.2 V, and the voltage at the ADC1 input is U2=0.4 V. After converting the values of these voltages into digital format, the measured resistance value of the nanostructure is calculated according to the expression:
Rx=( U1-U2 / K2 ) · R0 · K2 / U2 Rx=( U1-U2 / K2 ) · R0 · K2 / U2
ce va constitui, în cazul de faţă: what will constitute, in this case:
Rx = ( 1,2 - 0,4 /160 ) ·100 · 160 / 0,4 = 47,9 kΩ Rx = ( 1.2 - 0.4 /160 ) ·100 · 160 / 0.4 = 47.9 kΩ
1. Лозицкий Б.Н., Мельниченко И. И. Радиотехника, Электрорадиоизмерения, Энергия, Москва, 1976, с.193-194 1. Lozitsky B.N., Melnichenko I. И. Радиотехника, Електрорадиоизмерения, Energiya, Moscow, 1976, p.193-194
2. RU 2541723 C1 2015.02.20 2. RU 2541723 C1 2015.02.20
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| Application Number | Priority Date | Filing Date | Title |
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| MDS20150147A MD1023Z (en) | 2015-11-09 | 2015-11-09 | Device for measuring the parameters of sensors based on micro- and nanostructured semiconductor oxides |
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| MDS20150147A MD1023Z (en) | 2015-11-09 | 2015-11-09 | Device for measuring the parameters of sensors based on micro- and nanostructured semiconductor oxides |
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| MD1023Y MD1023Y (en) | 2016-04-30 |
| MD1023Z true MD1023Z (en) | 2016-11-30 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SU1597802A1 (en) * | 1987-04-17 | 1990-10-07 | Институт радиофизики и электроники АН АрмССР | Apparatus for measuring parameters of power supply sources |
| RU19420U1 (en) * | 2001-05-18 | 2001-08-27 | Общество с ограниченной ответственностью "Связьприбор" | DEVICE FOR MEASURING ELECTRICAL PARAMETERS AND DETERMINING THE PLACE OF DAMAGE TO CABLE LINES |
| US8263002B1 (en) * | 2008-05-16 | 2012-09-11 | University Of Central Florida Research Foundation, Inc. | Fabrication of ZnO nanorod-based hydrogen gas nanosensor |
| RU2541723C1 (en) * | 2013-09-17 | 2015-02-20 | Федеральное Государственное Бюджетное Образовательное Учреждение Высшего Профессионального Образования "Донской Государственный Технический Университет" (Дгту) | Precision analogue-digital interface for working with resistive micro- and nanospheres |
-
2015
- 2015-11-09 MD MDS20150147A patent/MD1023Z/en not_active IP Right Cessation
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SU1597802A1 (en) * | 1987-04-17 | 1990-10-07 | Институт радиофизики и электроники АН АрмССР | Apparatus for measuring parameters of power supply sources |
| RU19420U1 (en) * | 2001-05-18 | 2001-08-27 | Общество с ограниченной ответственностью "Связьприбор" | DEVICE FOR MEASURING ELECTRICAL PARAMETERS AND DETERMINING THE PLACE OF DAMAGE TO CABLE LINES |
| US8263002B1 (en) * | 2008-05-16 | 2012-09-11 | University Of Central Florida Research Foundation, Inc. | Fabrication of ZnO nanorod-based hydrogen gas nanosensor |
| RU2541723C1 (en) * | 2013-09-17 | 2015-02-20 | Федеральное Государственное Бюджетное Образовательное Учреждение Высшего Профессионального Образования "Донской Государственный Технический Университет" (Дгту) | Precision analogue-digital interface for working with resistive micro- and nanospheres |
Non-Patent Citations (3)
| Title |
|---|
| O. Lupan, V.V. Ursaki, G. Chai, L. Chow. Selective hydrogen gas nanosensor using individual ZnO nanowire with fast response at room temperature, Sensors and Actuators B: Chemical, Volume 144, Issue 1, 29 January 2010, Pages 56–66 * |
| Oleg Lupan, Guangyu Chai, Lee Chow. Novel hydrogen gas sensor based on single ZnO nanorod, Microelectronic Engineering, Volume 85, Issue 11, November 2008, Pages 2220-2225 * |
| Лозицкий Б.Н., Мельниченко И. И. Радиотехника, Электрорадиоизмерения, Энергия, Москва, 1976, с.193-194 * |
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