MD1000G2 - Способ обработки окиси магния - Google Patents
Способ обработки окиси магнияInfo
- Publication number
- MD1000G2 MD1000G2 MD97-0090A MD970090A MD1000G2 MD 1000 G2 MD1000 G2 MD 1000G2 MD 970090 A MD970090 A MD 970090A MD 1000 G2 MD1000 G2 MD 1000G2
- Authority
- MD
- Moldova
- Prior art keywords
- magnesium oxide
- treatment
- oxide treatment
- thermal treatment
- materials
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 title abstract 2
- 239000000395 magnesium oxide Substances 0.000 title abstract 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 title abstract 2
- 238000007669 thermal treatment Methods 0.000 abstract 2
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 229910052787 antimony Inorganic materials 0.000 abstract 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 1
- 238000001816 cooling Methods 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 239000012774 insulation material Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000004377 microelectronic Methods 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Landscapes
- Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
Abstract
Изобретение относится к способам термообработки материалов и может быть использовано в полупроводниковой промышленности и микроэлектронике при изготовлении приборов и устройств, оптических линз, теплоизоляционных материалов.Способ обработки окиси магния включает термообработку с последующим охлаждением на воздухе. Термообработку проводят при температуре 1100-1300°С, в расплаве сурьмы с концентрацией алюминия от 0,1 до 20 ат. %.Технический результат заключается в изменении кристаллической решeтки окиси магния.Фиг.: 2
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MD97-0090A MD1000G2 (ru) | 1997-02-26 | 1997-02-26 | Способ обработки окиси магния |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MD97-0090A MD1000G2 (ru) | 1997-02-26 | 1997-02-26 | Способ обработки окиси магния |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| MD1000G2 true MD1000G2 (ru) | 1999-03-31 |
Family
ID=62129504
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MD97-0090A MD1000G2 (ru) | 1997-02-26 | 1997-02-26 | Способ обработки окиси магния |
Country Status (1)
| Country | Link |
|---|---|
| MD (1) | MD1000G2 (ru) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MD3541G2 (ru) * | 2007-07-06 | 2008-10-31 | Институт Прикладной Физики Академии Наук Молдовы | Способ модификации приповерхностных слоев монокристаллов селенида цинка |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE300850C (ru) * | 1916-03-18 | 1917-09-24 | ||
| SU1055785A1 (ru) * | 1982-04-12 | 1983-11-23 | Ордена Трудового Красного Знамени Институт Кристаллографии Им.А.В.Шубникова | Способ термообработки монокристаллов |
-
1997
- 1997-02-26 MD MD97-0090A patent/MD1000G2/ru unknown
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE300850C (ru) * | 1916-03-18 | 1917-09-24 | ||
| SU1055785A1 (ru) * | 1982-04-12 | 1983-11-23 | Ордена Трудового Красного Знамени Институт Кристаллографии Им.А.В.Шубникова | Способ термообработки монокристаллов |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MD3541G2 (ru) * | 2007-07-06 | 2008-10-31 | Институт Прикладной Физики Академии Наук Молдовы | Способ модификации приповерхностных слоев монокристаллов селенида цинка |
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