MA56070A - Cellules solaires à hétérojonction semi-conductrice à large bande interdite/graphène à haut rendement - Google Patents

Cellules solaires à hétérojonction semi-conductrice à large bande interdite/graphène à haut rendement

Info

Publication number
MA56070A
MA56070A MA056070A MA56070A MA56070A MA 56070 A MA56070 A MA 56070A MA 056070 A MA056070 A MA 056070A MA 56070 A MA56070 A MA 56070A MA 56070 A MA56070 A MA 56070A
Authority
MA
Morocco
Prior art keywords
high efficiency
solar cells
heterojunction solar
semiconductor heterojunction
graphene semiconductor
Prior art date
Application number
MA056070A
Other languages
English (en)
Inventor
Dieter M Gruen
Original Assignee
Dimerond Tech Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dimerond Tech Llc filed Critical Dimerond Tech Llc
Publication of MA56070A publication Critical patent/MA56070A/fr

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H10K30/35—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles
    • H10K30/352—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles the inorganic nanostructures being nanotubes or nanowires, e.g. CdTe nanotubes in P3HT polymer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0328—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
    • H01L31/035227—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum wires, or nanorods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B10/00—Integration of renewable energy sources in buildings
    • Y02B10/10—Photovoltaic [PV]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
MA056070A 2019-06-03 2020-06-02 Cellules solaires à hétérojonction semi-conductrice à large bande interdite/graphène à haut rendement MA56070A (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962856698P 2019-06-03 2019-06-03
US201962924805P 2019-10-23 2019-10-23
US201962937938P 2019-11-20 2019-11-20

Publications (1)

Publication Number Publication Date
MA56070A true MA56070A (fr) 2022-04-06

Family

ID=73052152

Family Applications (1)

Application Number Title Priority Date Filing Date
MA056070A MA56070A (fr) 2019-06-03 2020-06-02 Cellules solaires à hétérojonction semi-conductrice à large bande interdite/graphène à haut rendement

Country Status (6)

Country Link
US (4) US10833285B1 (fr)
EP (1) EP3977521A4 (fr)
JP (1) JP7531223B2 (fr)
CN (1) CN114402444A (fr)
MA (1) MA56070A (fr)
WO (1) WO2020247356A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11569432B2 (en) * 2019-11-15 2023-01-31 Georgia Tech Research Corporation Systems and methods for piezoelectric, electronic, and photonic devices with dual inversion layers

Family Cites Families (107)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3988166A (en) 1975-01-07 1976-10-26 Beam Engineering, Inc. Apparatus for enhancing the output of photovoltaic solar cells
DE3502902A1 (de) 1984-01-31 1985-08-08 Futaba Denshi Kogyo K.K., Mobara, Chiba Ionenstrahl-aufdampfvorrichtung
US4568663A (en) 1984-06-29 1986-02-04 Exxon Research And Engineering Co. Cobalt catalysts for the conversion of methanol to hydrocarbons and for Fischer-Tropsch synthesis
JPS6115967A (ja) 1984-06-29 1986-01-24 Sumitomo Electric Ind Ltd 表面処理方法
GB8423255D0 (en) 1984-09-14 1984-10-17 Atomic Energy Authority Uk Surface treatment of metals
US5132105A (en) 1990-02-02 1992-07-21 Quantametrics, Inc. Materials with diamond-like properties and method and means for manufacturing them
US6592839B2 (en) 1991-11-25 2003-07-15 The University Of Chicago Tailoring nanocrystalline diamond film properties
US5209916A (en) 1991-11-25 1993-05-11 Gruen Dieter M Conversion of fullerenes to diamond
US5772760A (en) 1991-11-25 1998-06-30 The University Of Chicago Method for the preparation of nanocrystalline diamond thin films
US5370855A (en) 1991-11-25 1994-12-06 Gruen; Dieter M. Conversion of fullerenes to diamond
US5273788A (en) 1992-07-20 1993-12-28 The University Of Utah Preparation of diamond and diamond-like thin films
US5308661A (en) 1993-03-03 1994-05-03 The Regents Of The University Of California Pretreatment process for forming a smooth surface diamond film on a carbon-coated substrate
US5698328A (en) 1994-04-06 1997-12-16 The Regents Of The University Of California Diamond thin film electron emitter
EP0731490A3 (fr) 1995-03-02 1998-03-11 Ebara Corporation Procédé de microfabrication ultra-fine utilisant un faisceau d'énergie
US6020677A (en) 1996-11-13 2000-02-01 E. I. Du Pont De Nemours And Company Carbon cone and carbon whisker field emitters
US6183818B1 (en) 1998-10-01 2001-02-06 Uab Research Foundation Process for ultra smooth diamond coating on metals and uses thereof
KR20000028741A (ko) 1998-10-12 2000-05-25 안자키 사토루 열전반도체 재료 또는 소자의 제조방법 및 열전모듈의제조방법
US6277438B1 (en) 1999-05-03 2001-08-21 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Protective fullerene (C60) packaging system for microelectromechanical systems applications
AU3706401A (en) 2000-02-16 2001-08-27 Fullerene Internat Corp Diamond/carbon nanotube structures for efficient electron field emission
CZ302228B6 (cs) 2000-06-15 2011-01-05 Element Six (Pty) Ltd Monokrystalická diamantová vrstva pripravená chemickým vylucováním z plynné fáze
US6669996B2 (en) 2000-07-06 2003-12-30 University Of Louisville Method of synthesizing metal doped diamond-like carbon films
AU2001284479B2 (en) 2000-09-08 2005-05-12 Nippon Steel Corporation Ceramic/metal composite article, composite structure for transporting oxide ion, and composite article having sealing property
IL140281A0 (en) 2000-12-13 2002-02-10 Coil-based electronic and electrical components (such as coils, transformers, filters and motors) based on nanotechnology
US7273598B2 (en) 2001-01-19 2007-09-25 Chevron U.S.A. Inc. Diamondoid-containing materials for passivating layers in integrated circuit devices
US7306674B2 (en) 2001-01-19 2007-12-11 Chevron U.S.A. Inc. Nucleation of diamond films using higher diamondoids
US7795468B2 (en) 2001-01-19 2010-09-14 Chevron U.S.A. Inc. Functionalized higher diamondoids
US6783589B2 (en) 2001-01-19 2004-08-31 Chevron U.S.A. Inc. Diamondoid-containing materials in microelectronics
US7127286B2 (en) 2001-02-28 2006-10-24 Second Sight Medical Products, Inc. Implantable device using ultra-nanocrystalline diamond
JP3833489B2 (ja) 2001-03-29 2006-10-11 株式会社東芝 冷陰極放電装置
US7285919B2 (en) 2001-06-22 2007-10-23 Lutron Electronics Co., Inc. Electronic ballast having improved power factor and total harmonic distortion
US6534923B2 (en) 2001-07-13 2003-03-18 Microwave Power Technology Electron source
TW587399B (en) 2001-08-31 2004-05-11 Sanyo Electric Co Method for making electroluminescene (EL) display panel and vapor deposition mask
US6884290B2 (en) 2002-01-11 2005-04-26 Board Of Trustees Of Michigan State University Electrically conductive polycrystalline diamond and particulate metal based electrodes
US20030152700A1 (en) 2002-02-11 2003-08-14 Board Of Trustees Operating Michigan State University Process for synthesizing uniform nanocrystalline films
US20070126312A1 (en) 2002-03-08 2007-06-07 Chien-Min Sung DLC field emission with nano-diamond impregnated metals
US7235912B2 (en) 2002-03-08 2007-06-26 Chien-Min Sung Diamond-like carbon thermoelectric conversion devices and methods for the use and manufacture thereof
WO2003105240A1 (fr) 2002-05-30 2003-12-18 Rensselaer Polytechnic Institute Systeme thermique composite
TW574174B (en) 2002-06-11 2004-02-01 Ind Tech Res Inst Nanostructured tungsten carbide material and method of fabricating the same
US7309476B2 (en) 2002-07-18 2007-12-18 Chevron U.S.A. Inc. Diamondoid-based components in nanoscale construction
US7224532B2 (en) 2002-12-06 2007-05-29 Chevron U.S.A. Inc. Optical uses diamondoid-containing materials
US7238963B2 (en) 2003-04-28 2007-07-03 Tpo Displays Corp. Self-aligned LDD thin-film transistor and method of fabricating the same
DE102004025048A1 (de) 2003-05-20 2004-12-23 Futaba Corp., Mobara Ultra-dispergierter Nano-Kohlenstoff und Verfahren zu seiner Herstellung
US7097906B2 (en) 2003-06-05 2006-08-29 Lockheed Martin Corporation Pure carbon isotropic alloy of allotropic forms of carbon including single-walled carbon nanotubes and diamond-like carbon
US20050019114A1 (en) 2003-07-25 2005-01-27 Chien-Min Sung Nanodiamond PCD and methods of forming
GB0320222D0 (en) 2003-08-29 2003-10-01 Univ Bristol Field emitter
US7312562B2 (en) 2004-02-04 2007-12-25 Chevron U.S.A. Inc. Heterodiamondoid-containing field emission devices
US7309446B1 (en) 2004-02-25 2007-12-18 Metadigm Llc Methods of manufacturing diamond capsules
JP2005294478A (ja) 2004-03-31 2005-10-20 Dainippon Printing Co Ltd 熱電変換材料
US20060222850A1 (en) 2005-04-01 2006-10-05 The University Of Chicago Synthesis of a self assembled hybrid of ultrananocrystalline diamond and carbon nanotubes
US7858186B2 (en) 2004-11-12 2010-12-28 William Marsh Rice University Fluorinated nanodiamond as a precursor for solid substrate surface coating using wet chemistry
US7842271B2 (en) 2004-12-07 2010-11-30 Petrik Viktor I Mass production of carbon nanostructures
US20060207647A1 (en) 2005-03-16 2006-09-21 General Electric Company High efficiency inorganic nanorod-enhanced photovoltaic devices
US20060269567A1 (en) 2005-05-16 2006-11-30 Liu Yuen Universal detoxifying composition
JP2007081097A (ja) 2005-09-14 2007-03-29 Frontier Material:Kk 太陽光・熱ハイブリッドモジュールおよびハイブリッド発電システム、並びに建材一体型モジュールおよび建物
US20110005564A1 (en) 2005-10-11 2011-01-13 Dimerond Technologies, Inc. Method and Apparatus Pertaining to Nanoensembles Having Integral Variable Potential Junctions
US7718000B2 (en) 2005-10-11 2010-05-18 Dimerond Technologies, Llc Method and article of manufacture corresponding to a composite comprised of ultra nonacrystalline diamond, metal, and other nanocarbons useful for thermoelectric and other applications
US7572332B2 (en) 2005-10-11 2009-08-11 Dimerond Technologies, Llc Self-composite comprised of nanocrystalline diamond and a non-diamond component useful for thermoelectric applications
US20070153354A1 (en) 2005-12-22 2007-07-05 Solbeam, Inc. Minimizing lensing in electro-optic prisms
WO2007078210A1 (fr) 2005-12-30 2007-07-12 Gosudarstvennoe Uchrezhdenie 'federalnoe Agentstvo Po Pravovoi Zaschite Rezultatov Intellektualnoi Deyatelnosti Voennogo, Spetsialnogo I Dvoinogo Naznachenia' Pri Ministerstve Yustitsii Rossiyskoy Fed Nanodiamant et procede de fabrication correspondant
US7841428B2 (en) 2006-02-10 2010-11-30 Us Synthetic Corporation Polycrystalline diamond apparatuses and methods of manufacture
US20070232074A1 (en) 2006-03-31 2007-10-04 Kramadhati Ravi Techniques for the synthesis of dense, high-quality diamond films using a dual seeding approach
US7947329B2 (en) 2006-09-11 2011-05-24 Wisconsin Alumni Research Foundation Methods of applying a nanocrystalline diamond film to a cutting tool
US8044292B2 (en) 2006-10-13 2011-10-25 Toyota Motor Engineering & Manufacturing North America, Inc. Homogeneous thermoelectric nanocomposite using core-shell nanoparticles
US20090042029A1 (en) 2007-04-13 2009-02-12 Drexel University Polyamide nanofibers and methods thereof
US7999176B2 (en) 2007-05-08 2011-08-16 Vanguard Solar, Inc. Nanostructured solar cells
US20090017258A1 (en) 2007-07-10 2009-01-15 Carlisle John A Diamond film deposition
US7714317B2 (en) 2007-08-30 2010-05-11 Brookhaven Science Associates, Llc Assembly of ordered carbon shells on semiconducting nanomaterials
US8440467B2 (en) 2007-09-28 2013-05-14 William Marsh Rice University Electronic switching, memory, and sensor devices from a discontinuous graphene and/or graphite carbon layer on dielectric materials
TWI438906B (zh) * 2007-12-20 2014-05-21 Cima Nanotech Israel Ltd 具有利用奈米粒子形成的透明電極之光伏打裝置
US8236386B2 (en) 2008-01-24 2012-08-07 Wisys Technology Foundation Nanowire and microwire fabrication technique and product
KR101278746B1 (ko) 2008-06-20 2013-06-25 오사까 가스 가부시키가이샤 산화티탄 피복 탄소 섬유 및 다공질 산화티탄 피복 탄소 재료 조성물
CN101615640B (zh) * 2008-06-27 2011-01-19 上海电机学院 氧化锌基太阳能电池及其制备方法
US20100101621A1 (en) 2008-10-28 2010-04-29 Jun Xu Solar powered generating apparatus and methods
BRPI0916044B1 (pt) 2008-11-04 2019-06-18 Eaton Corporation Gerador solar
KR101562060B1 (ko) 2009-04-06 2015-10-21 삼성전자주식회사 전기 에너지 발생 장치 및 그 제조 방법
US20140370380A9 (en) 2009-05-07 2014-12-18 Yi Cui Core-shell high capacity nanowires for battery electrodes
US20120097217A1 (en) 2009-05-15 2012-04-26 Huiming Yin Functionally Graded Solar Roofing Panels and Systems
KR101539670B1 (ko) 2009-10-13 2015-07-27 삼성전자주식회사 전기에너지 발생장치
US8390705B2 (en) 2009-10-27 2013-03-05 Hewlett-Packard Develoment Company, L.P. Nanowire photodiodes
WO2011058544A2 (fr) 2009-11-16 2011-05-19 Nextpv Inc. Dispositif photovoltaïque à base de graphène
KR101087911B1 (ko) 2009-11-23 2011-11-30 한양대학교 산학협력단 유기-무기 하이브리드 태양전지 및 그 제조방법
US8808810B2 (en) * 2009-12-15 2014-08-19 Guardian Industries Corp. Large area deposition of graphene on substrates, and products including the same
US9193879B2 (en) 2010-02-17 2015-11-24 Baker Hughes Incorporated Nano-coatings for articles
US8890277B2 (en) 2010-03-15 2014-11-18 University Of Florida Research Foundation Inc. Graphite and/or graphene semiconductor devices
SA111320374B1 (ar) 2010-04-14 2015-08-10 بيكر هوغيس انكوبوريتد طريقة تشكيل الماسة متعدد البلورات من الماس المستخرج بحجم النانو
US8969717B2 (en) 2010-08-12 2015-03-03 Aeris Capital Sustainable Ip Ltd. Thermoelectric stack coating for improved solar panel function
BR112013010515A2 (pt) 2010-10-29 2016-08-02 Baker Hughes Inc partículas de grafeno revestidas de diamante, composições e estruturas intermédias compreendendo o mesmo e os métodos de formação de poli cristalinos de partículas de diamante grafeno-revestido e compactos
US20120192920A1 (en) 2011-01-27 2012-08-02 Total Energy Renewable Power Systems, Llc Stacked Layer High Efficiency Solar Energy Collector
US20120312343A1 (en) 2011-04-12 2012-12-13 Nanocomp Technologies, Inc. Nanostructured material based thermoelectric generators and methods of generating power
KR101304491B1 (ko) 2011-07-18 2013-09-05 광주과학기술원 나노구조체 어레이 기판, 그 제조방법 및 이를 이용한 염료감응 태양전지
US20130040204A1 (en) 2011-08-08 2013-02-14 Battelle Memorial Institute Functional Nanocomposite Materials, Electrodes, and Energy Storage Systems
US20130206199A1 (en) 2011-08-12 2013-08-15 AEgis Technologies Group, Inc. Device and Method for Hybrid Solar-Thermal Energy Harvesting
WO2013027561A1 (fr) 2011-08-19 2013-02-28 Semiconductor Energy Laboratory Co., Ltd. Procédé permettant de fabriquer un objet revêtu de graphène, électrode négative de batterie rechargeable incluant l'objet revêtu de graphène et batterie rechargeable incluant l'électrode négative
US8835285B2 (en) 2011-08-22 2014-09-16 Flux Photon Corporation Methods to fabricate vertically oriented anatase nanowire arrays on transparent conductive substrates and applications thereof
US8878157B2 (en) 2011-10-20 2014-11-04 University Of Kansas Semiconductor-graphene hybrids formed using solution growth
US9166074B2 (en) 2011-12-09 2015-10-20 The Board Of Trustees Of The Leland Stanford Junior University Metal silicide nanowire arrays for anti-reflective electrodes in photovoltaics
CN102522219A (zh) * 2011-12-15 2012-06-27 东南大学 一种量子点敏化太阳能电池及其制备方法
JP5875068B2 (ja) * 2012-03-08 2016-03-02 国立大学法人 奈良先端科学技術大学院大学 棒状分子の分子長分布の狭小化方法
US20130284338A1 (en) * 2012-04-26 2013-10-31 Gm Global Technology Operations Llc. Self assembly of graphene materials
GB201211038D0 (en) * 2012-06-21 2012-08-01 Norwegian Univ Sci & Tech Ntnu Solar cells
US8586999B1 (en) 2012-08-10 2013-11-19 Dimerond Technologies, Llc Apparatus pertaining to a core of wide band-gap material having a graphene shell
US9040395B2 (en) * 2012-08-10 2015-05-26 Dimerond Technologies, Llc Apparatus pertaining to solar cells having nanowire titanium oxide cores and graphene exteriors and the co-generation conversion of light into electricity using such solar cells
US8829331B2 (en) 2012-08-10 2014-09-09 Dimerond Technologies Llc Apparatus pertaining to the co-generation conversion of light into electricity
WO2014031911A1 (fr) * 2012-08-22 2014-02-27 Northwestern University Anodes, cellules solaires et leurs procédés de fabrication
EP3033774A1 (fr) * 2013-08-18 2016-06-22 Ramot at Tel-Aviv University Ltd. Cellule photovoltaïque et procédé de fabrication de celle-ci
JP6249372B2 (ja) 2014-11-28 2017-12-20 川研ファインケミカル株式会社 グラフェン被覆アルミナ、グラフェン被覆アルミナの集合物、グラフェン被覆アルミナ含有の電子材料、及び表面疎水化処理方法
CN105513812B (zh) 2016-01-29 2018-06-22 白德旭 一种石墨烯太阳能电池及其制备方法

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US20200381645A1 (en) 2020-12-03
CN114402444A (zh) 2022-04-26
US20210005833A1 (en) 2021-01-07
WO2020247356A1 (fr) 2020-12-10
US20220190267A1 (en) 2022-06-16
US10833285B1 (en) 2020-11-10
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US11069870B2 (en) 2021-07-20
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