MA33414B1 - Matériau composite comprenant des nanoparticules ainsi que production de couches photoactives contenant des nanoparticules semi-conductrices quaternaires, pentanaires et supérieures - Google Patents

Matériau composite comprenant des nanoparticules ainsi que production de couches photoactives contenant des nanoparticules semi-conductrices quaternaires, pentanaires et supérieures

Info

Publication number
MA33414B1
MA33414B1 MA34509A MA34509A MA33414B1 MA 33414 B1 MA33414 B1 MA 33414B1 MA 34509 A MA34509 A MA 34509A MA 34509 A MA34509 A MA 34509A MA 33414 B1 MA33414 B1 MA 33414B1
Authority
MA
Morocco
Prior art keywords
nanoparticles
composite material
production
pentana
photoactive layers
Prior art date
Application number
MA34509A
Other languages
Arabic (ar)
English (en)
Inventor
Albert Plessing
Franz Stelzer
Dieter Meissner
Thomas Rath
Eugen Maier
Gregor Trimmel
Original Assignee
Isovoltaic Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Isovoltaic Ag filed Critical Isovoltaic Ag
Publication of MA33414B1 publication Critical patent/MA33414B1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0326—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising AIBIICIVDVI kesterite compounds, e.g. Cu2ZnSnSe4, Cu2ZnSnS4
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H10K30/35—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/114—Poly-phenylenevinylene; Derivatives thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Photovoltaic Devices (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)
  • Powder Metallurgy (AREA)
  • Paints Or Removers (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Compositions Of Macromolecular Compounds (AREA)

Abstract

L'invention concerne un matériau composite comprenant au moins deux constituants, au moins un constituant étant présent sous la forme de nanoparticules qui sont constituées d'au moins trois métaux et d'au moins un non-métal et dont le diamètre est inférieur à un micromètre, de préférence inférieur à 200 nm. Le matériau composite selon l'invention convient notamment pour la production de couches photoactives.
MA34509A 2009-06-02 2010-05-27 Matériau composite comprenant des nanoparticules ainsi que production de couches photoactives contenant des nanoparticules semi-conductrices quaternaires, pentanaires et supérieures MA33414B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
AT0084709A AT508283A1 (de) 2009-06-02 2009-06-02 Kompositmaterial umfassend nanopartikel sowie herstellung von photoaktiven schichten enthaltend quaternäre, pentanäre und höher zusammengesetzte halbleiternanopartikel
PCT/AT2010/000184 WO2010138982A1 (fr) 2009-06-02 2010-05-27 Matériau composite comprenant des nanoparticules ainsi que production de couches photoactives contenant des nanoparticules semi-conductrices quaternaires, pentanaires et supérieures

Publications (1)

Publication Number Publication Date
MA33414B1 true MA33414B1 (fr) 2012-07-03

Family

ID=42359496

Family Applications (1)

Application Number Title Priority Date Filing Date
MA34509A MA33414B1 (fr) 2009-06-02 2010-05-27 Matériau composite comprenant des nanoparticules ainsi que production de couches photoactives contenant des nanoparticules semi-conductrices quaternaires, pentanaires et supérieures

Country Status (16)

Country Link
US (1) US20120129322A1 (fr)
EP (1) EP2438634A1 (fr)
JP (1) JP2012529161A (fr)
CN (1) CN102460762A (fr)
AT (2) AT508283A1 (fr)
AU (1) AU2010256322A1 (fr)
BR (1) BRPI1013021A2 (fr)
CA (1) CA2764349A1 (fr)
CL (1) CL2011003034A1 (fr)
CO (1) CO6470853A2 (fr)
MA (1) MA33414B1 (fr)
MX (1) MX2011012882A (fr)
RU (1) RU2011153983A (fr)
TW (1) TW201105585A (fr)
WO (1) WO2010138982A1 (fr)
ZA (1) ZA201108789B (fr)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012112927A2 (fr) * 2011-02-18 2012-08-23 Hugh Hillhouse Procédés de formation de films semiconducteurs comprenant des films semiconducteurs i2-ii-iv-vi4 et i2-(ii,iv)-iv-vi4 et dispositifs électroniques comprenant les films semiconducteurs
JP5476336B2 (ja) * 2011-04-25 2014-04-23 株式会社田中化学研究所 複合硫化物粉体及びその製造方法、化合物半導体、並びに太陽電池
WO2014039937A1 (fr) 2012-09-07 2014-03-13 Cornell University Synthèse, procédé et applications d'un chalcogénure métallique
KR102302598B1 (ko) * 2013-03-14 2021-09-16 쇼에이 일렉트로닉 머티리얼즈, 인코포레이티드 나노입자의 합성을 위한 연속식 유동 반응기
USRE48454E1 (en) 2013-03-14 2021-03-02 Shoei Electronic Materials, Inc. Continuous flow reactor for the synthesis of nanoparticles
WO2014196311A1 (fr) * 2013-06-03 2014-12-11 東京応化工業株式会社 Procédé pour fabriquer un complexe et une solution de ce dernier, procédé pour fabriquer une couche d'absorption de lumière pour une cellule solaire, et procédé pour fabriquer une cellule solaire
US9574135B2 (en) * 2013-08-22 2017-02-21 Nanoco Technologies Ltd. Gas phase enhancement of emission color quality in solid state LEDs
JP6209796B2 (ja) * 2013-09-06 2017-10-11 国立大学法人 宮崎大学 化合物半導体ナノ粒子による光吸収層の作製方法
CO6870008A1 (es) 2014-02-07 2014-02-20 Pontificia Universidad Javeriana Método para la fabricación de una película delgada formada por un cristal coloidal infiltrado con el polímero luminiscente mdmo-ppv formado a partir de esferas de sílice (sio2) con estructura cubica centrada en las caras (fcc)
RU2610606C2 (ru) * 2014-12-25 2017-02-14 Акционерное общество "Государственный научно-исследовательский и проектный институт редкометаллической промышленности "Гиредмет" Способ получения композиционного материала на основе полимерной матрицы для микроэлектроники
CN104952979B (zh) * 2015-06-11 2016-09-14 岭南师范学院 一种微米级球形铜锌锡硫单晶颗粒的制备方法及其单晶颗粒和应用
CN105355720B (zh) * 2015-12-03 2017-02-01 华东师范大学 一种制备铜锡硫薄膜太阳能电池吸收层的方法
RU2695208C1 (ru) * 2018-07-17 2019-07-22 Федеральное государственное бюджетное учреждение науки Институт проблем химической физики Российской академии наук (ИПХФ РАН) Способ получения монозеренных кестеритных порошков
RU2701467C1 (ru) * 2018-12-25 2019-09-26 федеральное государственное автономное образовательное учреждение высшего образования "Санкт-Петербургский национальный исследовательский университет информационных технологий, механики и оптики" (Университет ИТМО) Прозрачный проводящий оксид
RU2718124C1 (ru) * 2019-06-10 2020-03-30 Федеральное государственное бюджетное учреждение науки Институт проблем химической физики Российской Академии наук (ФГБУН ИПХФ РАН) Способ получения монозеренных кестеритных порошков из тройных халькогенидов меди и олова и соединений цинка

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7777303B2 (en) * 2002-03-19 2010-08-17 The Regents Of The University Of California Semiconductor-nanocrystal/conjugated polymer thin films
US8048477B2 (en) * 2004-02-19 2011-11-01 Nanosolar, Inc. Chalcogenide solar cells
US8426722B2 (en) * 2006-10-24 2013-04-23 Zetta Research and Development LLC—AQT Series Semiconductor grain and oxide layer for photovoltaic cells

Also Published As

Publication number Publication date
AT12057U1 (de) 2011-09-15
EP2438634A1 (fr) 2012-04-11
AU2010256322A1 (en) 2012-01-19
TW201105585A (en) 2011-02-16
MX2011012882A (es) 2012-01-12
CL2011003034A1 (es) 2012-07-06
RU2011153983A (ru) 2013-07-20
CA2764349A1 (fr) 2010-12-09
BRPI1013021A2 (pt) 2016-03-29
US20120129322A1 (en) 2012-05-24
JP2012529161A (ja) 2012-11-15
CN102460762A (zh) 2012-05-16
CO6470853A2 (es) 2012-06-29
WO2010138982A1 (fr) 2010-12-09
ZA201108789B (en) 2013-02-27
AT508283A1 (de) 2010-12-15

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