CO6470853A2 - Material compuesto que comprende nanopartículas y peoducción de capas fotoactivas que contienen nanopartículas semiconductoras compuestas cuaternarias, pentanarias y de orden superior - Google Patents

Material compuesto que comprende nanopartículas y peoducción de capas fotoactivas que contienen nanopartículas semiconductoras compuestas cuaternarias, pentanarias y de orden superior

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Publication number
CO6470853A2
CO6470853A2 CO11165508A CO11165508A CO6470853A2 CO 6470853 A2 CO6470853 A2 CO 6470853A2 CO 11165508 A CO11165508 A CO 11165508A CO 11165508 A CO11165508 A CO 11165508A CO 6470853 A2 CO6470853 A2 CO 6470853A2
Authority
CO
Colombia
Prior art keywords
nanoparticles
composite
composite material
peoduction
pentanary
Prior art date
Application number
CO11165508A
Other languages
English (en)
Inventor
Dieter Meissner
Thomas Rath
Eugen Maier
Gregor Trimmel
Franz Stelzer
Albert Plessing
Original Assignee
Isovoltaic Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Isovoltaic Ag filed Critical Isovoltaic Ag
Publication of CO6470853A2 publication Critical patent/CO6470853A2/es

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H10K30/35—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0326—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising AIBIICIVDVI kesterite compounds, e.g. Cu2ZnSnSe4, Cu2ZnSnS4
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/114—Poly-phenylenevinylene; Derivatives thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Photovoltaic Devices (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)
  • Powder Metallurgy (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Paints Or Removers (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)

Abstract

La invención se refiere a un material compuesto que comprende cuando menos dos componentes, en donde al menos un componente está presente en la forma de nanopartículas, que consiste de al menos tres metales y al menos un no-metal y el diámetro del cual es menos que un micrómetro, de preferencia menor a 200 nm. El material compuesto de acuerdo con la invención está particularmente bien adecuado para la producción de capas fotoactivas.
CO11165508A 2009-06-02 2011-12-01 Material compuesto que comprende nanopartículas y peoducción de capas fotoactivas que contienen nanopartículas semiconductoras compuestas cuaternarias, pentanarias y de orden superior CO6470853A2 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
AT0084709A AT508283A1 (de) 2009-06-02 2009-06-02 Kompositmaterial umfassend nanopartikel sowie herstellung von photoaktiven schichten enthaltend quaternäre, pentanäre und höher zusammengesetzte halbleiternanopartikel

Publications (1)

Publication Number Publication Date
CO6470853A2 true CO6470853A2 (es) 2012-06-29

Family

ID=42359496

Family Applications (1)

Application Number Title Priority Date Filing Date
CO11165508A CO6470853A2 (es) 2009-06-02 2011-12-01 Material compuesto que comprende nanopartículas y peoducción de capas fotoactivas que contienen nanopartículas semiconductoras compuestas cuaternarias, pentanarias y de orden superior

Country Status (16)

Country Link
US (1) US20120129322A1 (es)
EP (1) EP2438634A1 (es)
JP (1) JP2012529161A (es)
CN (1) CN102460762A (es)
AT (2) AT508283A1 (es)
AU (1) AU2010256322A1 (es)
BR (1) BRPI1013021A2 (es)
CA (1) CA2764349A1 (es)
CL (1) CL2011003034A1 (es)
CO (1) CO6470853A2 (es)
MA (1) MA33414B1 (es)
MX (1) MX2011012882A (es)
RU (1) RU2011153983A (es)
TW (1) TW201105585A (es)
WO (1) WO2010138982A1 (es)
ZA (1) ZA201108789B (es)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9859497B2 (en) 2014-02-07 2018-01-02 Pontificia Universidad Javeriana Method for manufacturing a thin film consisting of a colloidal crystal infiltrated with the luminescent MDMO-PPV polymer made of silica (SiO2) spheres, having a face-centered cubic system (FCC)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5774727B2 (ja) * 2011-02-18 2015-09-09 ユニバーシティ オブ ワシントン スルー イッツ センター フォー コマーシャリゼーション Ｉ２−ｉｉ−ｉｖ−ｖｉ４及びｉ２−（ｉｉ、ｉｖ）−ｉｖ−ｖｉ４半導体フィルムを含む半導体フィルムを形成する方法
JP5476336B2 (ja) * 2011-04-25 2014-04-23 株式会社田中化学研究所 複合硫化物粉体及びその製造方法、化合物半導体、並びに太陽電池
WO2014039937A1 (en) 2012-09-07 2014-03-13 Cornell University Metal chalcogenide synthesis method and applications
CN113813899A (zh) * 2013-03-14 2021-12-21 昭荣化学工业株式会社 用于合成纳米粒子的连续流动反应器
USRE48454E1 (en) 2013-03-14 2021-03-02 Shoei Electronic Materials, Inc. Continuous flow reactor for the synthesis of nanoparticles
JP6012866B2 (ja) * 2013-06-03 2016-10-25 東京応化工業株式会社 錯体およびその溶液の製造方法、太陽電池用光吸収層の製造方法および太陽電池の製造方法
US9574135B2 (en) * 2013-08-22 2017-02-21 Nanoco Technologies Ltd. Gas phase enhancement of emission color quality in solid state LEDs
JP6209796B2 (ja) * 2013-09-06 2017-10-11 国立大学法人 宮崎大学 化合物半導体ナノ粒子による光吸収層の作製方法
RU2610606C2 (ru) * 2014-12-25 2017-02-14 Акционерное общество "Государственный научно-исследовательский и проектный институт редкометаллической промышленности "Гиредмет" Способ получения композиционного материала на основе полимерной матрицы для микроэлектроники
CN104952979B (zh) * 2015-06-11 2016-09-14 岭南师范学院 一种微米级球形铜锌锡硫单晶颗粒的制备方法及其单晶颗粒和应用
CN105355720B (zh) * 2015-12-03 2017-02-01 华东师范大学 一种制备铜锡硫薄膜太阳能电池吸收层的方法
RU2695208C1 (ru) * 2018-07-17 2019-07-22 Федеральное государственное бюджетное учреждение науки Институт проблем химической физики Российской академии наук (ИПХФ РАН) Способ получения монозеренных кестеритных порошков
RU2701467C1 (ru) * 2018-12-25 2019-09-26 федеральное государственное автономное образовательное учреждение высшего образования "Санкт-Петербургский национальный исследовательский университет информационных технологий, механики и оптики" (Университет ИТМО) Прозрачный проводящий оксид
RU2718124C1 (ru) * 2019-06-10 2020-03-30 Федеральное государственное бюджетное учреждение науки Институт проблем химической физики Российской Академии наук (ФГБУН ИПХФ РАН) Способ получения монозеренных кестеритных порошков из тройных халькогенидов меди и олова и соединений цинка

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7777303B2 (en) * 2002-03-19 2010-08-17 The Regents Of The University Of California Semiconductor-nanocrystal/conjugated polymer thin films
US8048477B2 (en) * 2004-02-19 2011-11-01 Nanosolar, Inc. Chalcogenide solar cells
US8426722B2 (en) * 2006-10-24 2013-04-23 Zetta Research and Development LLC—AQT Series Semiconductor grain and oxide layer for photovoltaic cells

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9859497B2 (en) 2014-02-07 2018-01-02 Pontificia Universidad Javeriana Method for manufacturing a thin film consisting of a colloidal crystal infiltrated with the luminescent MDMO-PPV polymer made of silica (SiO2) spheres, having a face-centered cubic system (FCC)

Also Published As

Publication number Publication date
RU2011153983A (ru) 2013-07-20
CL2011003034A1 (es) 2012-07-06
US20120129322A1 (en) 2012-05-24
AU2010256322A1 (en) 2012-01-19
JP2012529161A (ja) 2012-11-15
BRPI1013021A2 (pt) 2016-03-29
ZA201108789B (en) 2013-02-27
CN102460762A (zh) 2012-05-16
WO2010138982A1 (de) 2010-12-09
CA2764349A1 (en) 2010-12-09
MX2011012882A (es) 2012-01-12
TW201105585A (en) 2011-02-16
AT508283A1 (de) 2010-12-15
EP2438634A1 (de) 2012-04-11
AT12057U1 (de) 2011-09-15
MA33414B1 (fr) 2012-07-03

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