MA27296A1 - DATA STORAGE DEVICE. - Google Patents

DATA STORAGE DEVICE.

Info

Publication number
MA27296A1
MA27296A1 MA27872A MA27872A MA27296A1 MA 27296 A1 MA27296 A1 MA 27296A1 MA 27872 A MA27872 A MA 27872A MA 27872 A MA27872 A MA 27872A MA 27296 A1 MA27296 A1 MA 27296A1
Authority
MA
Morocco
Prior art keywords
storage device
data storage
domain wall
propagating
track
Prior art date
Application number
MA27872A
Other languages
French (fr)
Inventor
Russell Paul Cowburn
Original Assignee
Eastgate Invest Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eastgate Invest Ltd filed Critical Eastgate Invest Ltd
Publication of MA27296A1 publication Critical patent/MA27296A1/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
    • G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
    • G11C19/0808—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation
    • G11C19/0816—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation using a rotating or alternating coplanar magnetic field
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/81—Array wherein the array conductors, e.g. word lines, bit lines, are made of nanowires

Abstract

Un dispositif de stockage de données destiné à stocker des information numériques sous forme lisible est décrit, composé d'un ou plusieurs cléments de mémoire, chaque élément de mémoire comportant un conduit magnétique planaire capable de soutenir et de propager une paroi de domaine magnétique formée en une piste de propagation continue. Chaque piste continue est dotée d'au moins un et de préférence d'un grand nombre de n„uds d'inversion oé la direction de l'aimantation d'une paroi de domaine se propageant le long d'un conduit sous l'action d'un champ appliqué approprié, tel qu'un champ magnétique tournant, est changée.A data storage device for storing digital information in readable form is described, composed of one or more memory elements, each memory element comprising a planar magnetic conduit capable of supporting and propagating a magnetic domain wall formed in a continuous propagation track. Each continuous track is provided with at least one and preferably with a large number of reversing nodes in the direction of the magnetization of a domain wall propagating along a conduit under the action. of an appropriate applied field, such as a rotating magnetic field, is changed.

MA27872A 2002-03-27 2004-09-21 DATA STORAGE DEVICE. MA27296A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB0207160A GB0207160D0 (en) 2002-03-27 2002-03-27 Data storage device

Publications (1)

Publication Number Publication Date
MA27296A1 true MA27296A1 (en) 2005-05-02

Family

ID=9933766

Family Applications (1)

Application Number Title Priority Date Filing Date
MA27872A MA27296A1 (en) 2002-03-27 2004-09-21 DATA STORAGE DEVICE.

Country Status (20)

Country Link
EP (1) EP1514276A1 (en)
JP (1) JP4463564B2 (en)
CN (1) CN100452243C (en)
CU (1) CU23099A3 (en)
EA (1) EA006289B1 (en)
GB (1) GB0207160D0 (en)
HK (1) HK1070982A1 (en)
HR (1) HRP20040884A2 (en)
IS (1) IS7506A (en)
MA (1) MA27296A1 (en)
MX (1) MXPA04009307A (en)
MY (1) MY135448A (en)
NO (1) NO20043958L (en)
NZ (1) NZ535781A (en)
OA (1) OA12989A (en)
PL (1) PL373815A1 (en)
TW (1) TWI310938B (en)
WO (1) WO2003083874A1 (en)
YU (1) YU91604A (en)
ZA (1) ZA200407730B (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2008107998A (en) 2005-08-03 2009-09-10 Инджениа Текнолоджи Лимитед (Gb) ACCESS TO MEMORY
KR100819142B1 (en) * 2005-09-29 2008-04-07 재단법인서울대학교산학협력재단 Method of generating strong spin waves and spin devices for ultra-high speed information processing using spin waves
WO2009037910A1 (en) * 2007-09-19 2009-03-26 Nec Corporation Magnetic random access memory, its writing method, and magnetoresistive effect element
JP5327543B2 (en) * 2007-09-20 2013-10-30 日本電気株式会社 Magnetic random access memory
WO2009122990A1 (en) * 2008-04-02 2009-10-08 日本電気株式会社 Magnetoresistive effect element and magnetic random access memory
DE112012000271B4 (en) 2011-02-16 2022-01-05 International Business Machines Corporation Ferromagnetic unit that ensures high domain wall velocities
JP5653379B2 (en) 2012-03-23 2015-01-14 株式会社東芝 Magnetic storage element, magnetic memory, and magnetic storage device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3774179A (en) * 1971-07-22 1973-11-20 J Wiegand Ferromagnetic storage medium
US3811120A (en) * 1973-04-05 1974-05-14 Bell Telephone Labor Inc Magnetic domain propagation arrangement having channels defined by straight line boundaries
GB9925213D0 (en) * 1999-10-25 1999-12-22 Univ Cambridge Tech Magnetic logic elements
DE10033486A1 (en) * 2000-07-10 2002-01-24 Infineon Technologies Ag Integrated memory (MRAM), whose memory cells contain magnetoresistive memory effect
GB0019506D0 (en) * 2000-08-08 2000-09-27 Univ Cambridge Tech Magnetic element with switchable domain structure

Also Published As

Publication number Publication date
TW200306536A (en) 2003-11-16
OA12989A (en) 2006-10-13
NO20043958L (en) 2004-12-27
JP4463564B2 (en) 2010-05-19
CN1656568A (en) 2005-08-17
NZ535781A (en) 2005-05-27
YU91604A (en) 2006-05-25
TWI310938B (en) 2009-06-11
MY135448A (en) 2008-04-30
MXPA04009307A (en) 2005-07-05
HK1070982A1 (en) 2005-06-30
EA006289B1 (en) 2005-10-27
GB0207160D0 (en) 2002-05-08
IS7506A (en) 2004-10-15
WO2003083874A8 (en) 2005-02-17
CN100452243C (en) 2009-01-14
EA200401263A1 (en) 2005-04-28
JP2006504210A (en) 2006-02-02
PL373815A1 (en) 2005-09-19
HRP20040884A2 (en) 2005-02-28
CU23099A3 (en) 2005-12-20
ZA200407730B (en) 2005-08-31
EP1514276A1 (en) 2005-03-16
WO2003083874A1 (en) 2003-10-09

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