CN1656568A - Data storage device - Google Patents
Data storage device Download PDFInfo
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- CN1656568A CN1656568A CN 03812000 CN03812000A CN1656568A CN 1656568 A CN1656568 A CN 1656568A CN 03812000 CN03812000 CN 03812000 CN 03812000 A CN03812000 A CN 03812000A CN 1656568 A CN1656568 A CN 1656568A
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- magnetic
- memory device
- data memory
- data
- conduit
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
- G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
- G11C19/0808—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation
- G11C19/0816—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation using a rotating or alternating coplanar magnetic field
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/81—Array wherein the array conductors, e.g. word lines, bit lines, are made of nanowires
Abstract
A data storage device for storing digital information in a readable form is described made up of one or more memory elements, each memory element comprising a planar magnetic conduit capable of sustaining and propagating a magnetic domain wall formed into a continuous propagation track. Each continuous track is provided with at least one and preferably a large number of inversion nodes whereat the magnetisation direction of a domain wall propagating along the conduit under action of a suitable applied field, such as a rotating magnetic field, is changed.
Description
The present invention relates to a kind of data memory device in order to storage of digital information (for example computer document, digital music and digital video etc.).In particular, the present invention relates to write the data memory device of data and readback data unlimitedly.
There have been very many data memory devices to adopt of the application of various media in recent years as various digital data storage.Data memory device be through being adapted to various operating characteristicses after the design, and these features comprise capacity, access speed, write/override ability, the ability of long-time stable maintenance data when charged or not charged (), size, durability, portability and similar feature.
Known data memory device comprises magnetic tape storage, magnetic hard disks and disc storage body.These store body all can provide splendid storage volume and very fast data access speed, and all can be adapted to writing fast and overriding in the application of data.These store body all needs to possess moving-member, and the form of this moving-member is electromechanical read head or optical profile type read head.Just limit the device that adopts this data storage media thus and carried out microminiaturized degree, and limited the practicality of this device under high vibration environment.Though in any storage device, surface dielectric all is the key point of data storing, yet the storage mechanism that is adopted must possess the characteristic that can carry out accurate control to any supporting substrate is arranged.Therefore, this device must possess the structure of accurate control.Moreover this storage body all requires this read head to go to the surface of this device of access, has just limited this Design of device degree of freedom thus.
A project of the present invention provide a kind of interchangeable numerical data memory mechanism that various uses can be provided in any environment, for instance, especially Miniaturized; And/or can incorporate among other device (for example smart card, identification label and paster or similarly device); And/or can incorporate flexible base plate into; And/or can be used in the high vibration environment; And/or simple manufacture and cheap manufacturing cost etc.
Specific purposes of the present invention provide a kind of simplifying and the data memory device of store digital data effectively, so that can write data and readback data unlimitedly.
Therefore, according to the present invention, a kind of data memory device that comes storage of digital information (for example computer document, digital music and digital video etc.) with the form that can read is provided, it comprises more than one (should be a plurality of in particular) memory component, each memory component comprises that all one can keep and conducts the plane magnetic catheter that is formed on the neticdomain wall among the continuous propagation track, wherein every continuous rail all possesses at least one inversion node, optionally a plurality of inversion nodes can be arranged, and very a plurality of inversion nodes can be arranged especially.Under suitable externally-applied magnetic field effect, can change direction at wraparound node place along the direction of magnetization of the neticdomain wall of this conduit conduction, in particular, its direction of magnetization is inverted in fact.
Every conduit all is formed among the continuous propagation track.Routinely, a catheter-shaped is formed in the loop, with the propagation track that comprises that this is continuous.This loop possesses at least one inversion node, optionally a plurality of inversion nodes can be arranged, and very a plurality of inversion nodes can be arranged especially.According to the mechanism form of summarizing below, just can in this loop, come delivering data.Sometimes, this magnetic catheter can't constitute the whole loop of being made up of a plurality of inversion node; But the straight links of being made up of a plurality of inversion node and has the device that transmits data between two end points, so data still can circulate around the loop that seems sealing, and for instance, this a link wherein end comprises a data write device; The other end of this link comprises a data fetch equipment; And comprise an extra circuit, from the output terminal of this link data are fed back to the input end of this link in the electronics mode.
Conventionally, these inversion nodes comprise the structure of this conduit and the feature of shape, it is through after adjusting, (the direction magnetic field that can change for example under suitable externally-applied magnetic field effect, be the magnetic field of circulation change in particular), the direction of magnetization of magnetic domain conduction just can change, and preferably can produce the variation of essence counter-rotating in direction of magnetization.
Yet be necessary to accomplish that duct direction and domain wall propagation direction change, can not cause tangible non-continuous event at any location point simultaneously.Therefore, in this inversion node zone or the architectural feature that comprises in the zone of this inversion node must needn't in conduction orientation, produce under any tangible acute variation, impel the direction of magnetization of magnetic domain conduction to change, preferably can in direction of magnetization, produce the variation of essence counter-rotating.
In preferred embodiment, inversion node is included in the essence direction of magnetization counter-rotating that this inversion node takes place.Preferably, the inversion node that possesses in this conduit comprises some, this partly in direction can be different with original path, then direction can change again and gets back in the original path, does not therefore have direct conducting path in the part that this departs from.In particular, depart from and comprise with original path and produce 90 ° departing from.Based on above-mentioned reason, with original departing from that the path took place preferably along this conduit rail, along with distance departs from gradually.
For instance, this inversion node comprises a cycloid portion in this conduit return loops structure, in particular its direction inwardly, or the topological structure of structural equivalents therewith.
Preferably, all possesses a plurality of this kind cycloid portion in each loop.Therefore comprise preferably that according to device of the present invention several are formed at the magnetic catheters in the loop, every magnetic catheters all comprises a plurality of cycloids, these cycloids produce the direction counter-rotating in order to rapid mode in by the direction of magnetization of the neticdomain wall on it, when these neticdomain walls when conduit of the present invention conducts, can be under suitable driving magnetic field effect with cycloid as rollback point.
Preferably, each cycloid all has a turning radius, and its radius is between between three times to ten times of this conduit width.Preferably, when neticdomain wall passed through these cycloids, these cycloids just can cause the change of essence to its direction of magnetization, for example, and 180 ° counter-rotating.
According to the present invention, under the effect of controlling magnetic field, a neticdomain wall must be kept and conduct to the framework of this magnetic catheters.In general, this magnetic catheters all is made up of the continuous continuous rail of magnetic material.Therefore, preferably comprising magnetic wires according to the loop in the device of the present invention, in particular, all is the planar magnetic wire that is positioned on the application substrate generally.
Therefore, this data memory device can use several planar magnetic conduit (particularly magnetic wires), and its shape is preferably the loop of being made up of cycloid.In particular, what the present invention adopted is the nano level technology of magnetic, and this device comprises the magnetic Nano circuit on several planes, and these nanowires preferably are formed among a plurality of loops of being made up of cycloid.
The width of the magnetic Nano circuit on these planes is preferably less than 1 μ m, and is formed on any suitable substrate.With regard to the device that adopts carefully narrow nanoscale circuit, the width of nanowires must be accepted or rejected between the storage volume of installing and manufacturing cost and complexity.Yet, if the circuit that this device adopted surpasses 1 micron, just very impracticable; For present circuit manufacturing technology, 50nm may be the actual lower limit that can reach the purpose of saving money.Should benly be, there is no any restriction on the technology practice, can microminiaturized further employing device of the present invention through the manufacturing technology of improvement.
These circuits can be placed on the substrate of magnetic shape material thin-layer form.The thickness of circuit must pass through optimization, and reaching the best usefulness of this device, and thickness is the function of width substantially.In particular, line thicknesses generally all is about 1/40th of a line width.Line thicknesses all is not less than 2nm usually, preferably is not less than 3nm.On the practice, line thicknesses can not be greater than 25nm.
These circuits can utilize photolithography etching technique, X ray photolithography techniques, micro-contact printing technology, electron beam photolithography techniques, shadow mask deposition technique or any other suitable method to make.Circuit is made of magnetic material, for example permalloy (Ni
80Fe
20), or CoFe, or any other soft magnetic material.
Adopt the data memory device of above-mentioned inversion node must add the suitable magnetic field (should be the magnetic field of circulation change in particular) that direction can change, will illustrate in greater detail the working method that applies this magnetic field below, this working method can allow this inversion node have the function of memory.Provide a plurality of loop arrays that respectively adopt an above inversion node just can allow data memory device of the present invention with the mode of ring-type storage data in order.
Can data be write in the device of the present invention unlimitedly and unlimited these data are read back.Different with magnetic tape storage or magnetic hard disks is, the present invention is not and use moving-member.Therefore, data memory device of the present invention is easy to carry out miniaturized, and can be used in the environment of high vibration.Principle of the present invention is very simple, and its manufacturing cost is also quite cheap.Moreover, when data memory device of the present invention does not use, also do not need electric power to keep data among its storer.
The present invention uses several magnetic catheters such as planar magnetic wire.These planar lines are formed on some substrate, but different with microelectronic memory are, the electronic operation of this substrate and this device or magnetic operator have no relation, and this substrate only provides mechanical support basically.Still can adopt conventional silicon substrate, but because do not need to use the function of this substrate, so also can use silicon material in addition, for example glass or plastics.These example materials comprise Polyimide, for example the material of Kapton, polyethylene terephthalate or Mylar type, acetate fiber, polymethylmethacrylate or other material.The advantage of plastic base is that cost is low, production method is simple, and mechanical elasticity can be provided, so that the present invention can be fit to be integrated among plastic cement card (for example smart card) or the cloth.
Different with CD, magnetic tape storage and magnetic hard disks is because needn't mechanically access surface of the present invention, so a large amount of substrates can be stacked on mutually above the top, to form cube storer of a three-dimensional.
Of the present invention storage density is very moderate, is higher than magnetic tape storage, but is lower than magnetic hard disks.In case of necessity, reading of data and to write the speed of data quick in the extreme, even be higher than the speed of hard disk drive.But, the present invention is with the mode of ring-type storage data in order, thus to suitable low of the access time of particular data block, thereby make the present invention for employed Primary Hard Drive driver in the direct replacement computer, still restricted.
International application is for PCT/GB01/05072 number to apply for and develop the principle of Cowburn and Welland paper wood based on above-mentioned viewpoint, the narration of this case be to come the construction DLC (digital logic circuit) as the link (or nano level planar magnetic wire) that nano level magnetic material point is how formed.In particular, be explanation the present invention magnetic NOT grid shown in Figure 1.
Among Fig. 1, what arrow was represented is in order to the direction of magnetization in the magnetic material faciola that constitutes this grid.The intermediate structure of this grid will be from the direction of magnetization counter-rotating of left.
When using this grid in magnetic field, the direction of this arrow can circulate in the plane of this device along with the time.Though device of the present invention is not limited to any theory of operation, but it should be noted, because the non-grade of magnetic shape is to characteristic, the direction of magnetization in this circuit generally all can be limited in the long axis direction of this circuit.This is meaning and is having two kinds of possible direction of magnetization, therefore just exists binary characterization in essence.Along the inswept neticdomain wall of this circuit, just can change magnetized direction by the magnetic field that adds.The externally-applied magnetic field round-robin fact is meaning and can realize neticdomain wall near the corner.
According to the present invention, can suitable method make as the NOT grid as above-mentioned.In order to reach the goal, comparatively ideally be, slightly revise the shape of this grid, different with shape among Fig. 1, make it have cycloid shape.The output meeting of this grid is connected by suitable magnetic catheters (for example planar magnetic wire) gets back to its input end, to form a loop.The array that these loops are formed just constitutes the device of the present invention according to this preferred embodiment, this device comprises the planar magnetic nanowires that is formed in the large-scale loop of being made up of the polyphone cycloid, so that constitute the link of being made up of magnetic NOT grid.The output meeting of last NOT grid is fed back to the input end of a NOT grid by a planar magnetic wire, forms a loop, sends so that data sequence can be circulated.
When neticdomain wall (mode of action in these magnetic fields will be described in more detail as mentioned above below) under suitable cycling the action of a magnetic field, when propagating through these nanowires, these cycloids just can be used as in order to conduct the inversion node of these neticdomain walls.Counter-rotating output only can appear at after the half period time delay of this circulation externally-applied magnetic field, so can make the memory cell or the trigger of each inversion node such as same single bit.Therefore, the loop of being made up of these cycloids just has as the memory function as the tandem circulating register, and can be used as data memory device of the present invention.
According to another viewpoint of the present invention, data storage system provided by the present invention comprises device element above-mentioned more than; And further comprise a magnetic field drivers, become driving magnetic field when controlled in order to provide one.The preferable setting means of this magnetic field drivers is that this driving magnetic field is put on all cycloids in the particular loop simultaneously, and puts on simultaneously on all loops in this system.Just make that so native system has unique operating characteristic.This magnetic field system is applied in the whole loop simultaneously, and therefore whole data bit elements can be forwarded simultaneously, but not as habitual magnetic data store as the body, under the effect of write head, only can forward partly.
Can design any suitable magnetic field.Preferably, this magnetic field drivers can provide the controlled magnetic field of being made up of two quadrature fields, and these two quadrature fields are operated (preferably, blocked operation) with default order, and more preferably, can be to form a clock-type magnetic field clockwise or counterclockwise.Utilize this system, just can be in the storage device of first viewpoint according to the present invention with data storing.
This system may further comprise suitable electric input and/or output (and/or data input and/or output), so that can use this data memory device in memory storage and searching system.
Referring now to Fig. 2 to 8 example operation of magnetic data storage device in accordance with the principles of the present invention is described.
Fig. 1 to 8 with reference to the accompanying drawings, as this explanation, wherein:
Shown in Figure 1 is the synoptic diagram of the magnetic NOT grid (referring to above-mentioned explanation) of Prior Art;
Shown in Figure 2 is that it can be used as data memory device of the present invention through the magnetic NOT grid after revising;
Shown in Figure 3 is the synoptic diagram of the NOT grid structure (A partly) of Fig. 2, and the synoptic diagram of the effect when neticdomain wall enters the P point under the effect of circulation magnetic field H;
Among Fig. 4 shown in the A part is the magnetic NOT grids that 3 ring-types link to each other, it constitutes 5 bit tandem shift registers, and B shown in partly is under the effect in circulation magnetic field, how to force easy bit sequence (trajectory diagram I) and complicated bit sequence (trajectory diagram II) in this ring-type circuit, circulate (what the asterisk of A in partly represented is measurement point in this loop, just its measurement result is shown in the B part);
Among Fig. 5 shown in the A part is the magnetic NOT grids that 11 ring-types link to each other, it constitutes 13 bit tandem storeies, and B shown in partly is under the effect in circulation magnetic field, how to force easy 13 bit data sequences in this loop, circulate (what the asterisk of A in partly represented is measurement point in this loop, just its measurement result as B partly shown in);
Shown in Figure 6 is the synoptic diagram of data writing mechanism of the present invention and the data mechanism of reading;
Shown in Figure 7 is when carrying out addressing with electronics multiplexer and demultiplexer respectively, the synoptic diagram of several magnetic circuits on the same substrate; And
Several substrates that shown in Figure 8 is will respectively contain several data loop pile up the synoptic diagram with cube storer that forms a three-dimensional.
Shown in Figure 2 is the NOT grid synoptic diagram identical with Fig. 1, adjusts but specifically give optimization at the present invention, makes it have a cycloid shape.This grid is to the thick permalloy (Ni of 5nm above the silicon substrate with focused ion beam
80Fe
20) film mills and make.It is magnetic material that the brilliant white shadow region is only arranged among the figure, and other contrast district then is to cause because make during this grid the employed multiple step processing procedure of milling.Shown in Fig. 2 a is in the grid, has utilized a planar magnetic wire that its output is connected and has got back to its input end, to form a loop.Shown in Fig. 2 b is the enlarged drawing of this grid structure, and wherein this structure has a cycloid shape.Shown in Fig. 2 c is that the circulation magnetic field that adds of response is in an I and the some magneto-optic measurement result that II carried out.Half cycles between input (trajectory diagram I) variable condition and output (trajectory diagram II) variable condition postpones to equal the half period in this circulation magnetic field that adds, its correspondence be a kind of memory function.
Shown in Figure 3 is the synoptic diagram that moves in order to the counter-rotating of explaining this cycloid, the starting point of this delay of more clearly saying so.
Under low magnetic field conditions, the direction of magnetization in the inferior micron ferromagnetic in-plane circuit is understood because of the strong anisotropic relation of magnetic shape, and tends to the major axis along this circuit.When the intersection in the line of both direction opposing magnetization direction, rearranging of continuous nonmagnetic atom motion just can be taken place, though that this rearranges is very inviolent, but but can in specific range, little by little carry out, make a neticdomain wall with shape.
Be known that at present by applying the magnetic field parallel, just can allow neticdomain wall conduct along time micron magnetic wires of straight line with this circuit.When use is of the present invention, can add a magnetic field with the vector that in this sample plane, carries out circulation change along with the time, so that conduct neticdomain wall along the magnetic shape circuit that also can change direction and turning corner.Clockwise circulation or counterclockwise circulation just define this magnetic field to palm property.It is identical during to palm property to suppose that magnetic field and corner have, and neticdomain wall just should conduct near the magnetic wires corner.But because arbitrary corner palm property is depended on the conduction orientation of neticdomain wall, therefore in specific circulation magnetic field to palm property, neticdomain wall will be only can be therein in direction by a specific corner.This result meets any essential condition that must need the flogic system of clear and definite signal flow direction.Two kinds of stable magnetization direction in the inferior micron magnetic wires just in time can provide in order to representing the essential meaning of two kinds of cloth woods logic states, and this feature just can constitute the running basis of each logical block of being made up of this storage arrangement together with adding a circulation magnetic field.
Cycloid as shown in Figure 3 can provide a kind of reverse function and set forth NOT gate electrode function when being positioned at a suitable circulation magnetic field.Suppose that this magnetic field circulates in counterclockwise mode.When externally-applied magnetic field when the recycle design of horizontal direction changes over the recycle design of vertical direction, arrive at the neticdomain wall that engages end points " P " (Fig. 3 B) and will near first corner of this bonding station, conduct (Fig. 3 C), and conduct to end points " Q ".Magnetization between " P " point and " Q " point just can be continuous state (Fig. 3 D).Then, this magnetic domain just should be conducted (Fig. 3 E) near second corner of this bonding station, leave end points " R " towards phase anti-parallel direction circulation time when this magnetic field vector is lasting, and recovers continuous state between " Q " point and " R " point.With the direction of magnetization that is about to enter this joint by comparison, the circuit direction of magnetization of just having left this joint should be inverted.So, the NOT function that this joint just should be able to be implemented to expect with the time of half magnetic field circulation conduction delay.This function mode utilizes 3 rotating control modes with its direction counter-rotating as car.
Therefore arrive at input end and this wall leaves the time delay that has half cycles between this output terminal altogether at this wall.Among the present invention, we find a large amount of magnetic NOT grids is chained together, and the output of this link is recycled to this input end, just can allow this synchronization delay have relevant memory function.
Shown in Figure 4 is sketch of the present invention, three the NOT grids of having contacted among the figure, and utilize a planar magnetic wire output of this link to be fed back to the reference position of this link.Utilized specific externally-applied magnetic field that two different data bit element sequences are stylized to this device, and by beginning this magnetic field of circulating, so that these data can be begun to circulate around this loop.
What the trajectory diagram I among Fig. 4 b showed is to carry out the simple and easy bit sequence of round-robin around this link: just can repeat this pattern once every five circulations in this circulation magnetic field.What the trajectory diagram II among Fig. 4 b showed is to carry out the round-robin complex sequence around this loop, and its cycle is five cycling times in this circulation magnetic field.This device can be effective as the list type shift register of one 5 bits.After arbitrary the complete cycle in this circulation magnetic field of every process, this data bit element sequence just can move right a step.Those data are to utilize the counterclockwise obtained result in circulation magnetic field, thus these data with counterclockwise directional ring around this magnetic loop.We are found to, and also the loop direction in this magnetic field can be inverted to clockwise direction, make the direction of this datacycle reverse, and beginning come around this magnetic loop in clockwise mode.
The testing result synoptic diagram of the present invention that is to use 11 NOT grids shown in Figure 5.What Fig. 5 b showed is to carry out the simple and easy bit sequence of round-robin around this loop, and its repetition period is 13 cycling times in this circulation magnetic field.
By above the planar magnetic wire or following, as to be loaded with electric current lithography circuit, just data being write among each loop by this.Mode below desire then can adopt during sense data among each loop: use to be attached to the wherein a part of magnetic tunnel in this loop and to connect face; Measure in these corners of this circuit the wherein neticdomain wall resistance value at a place; Or measure in these NOT grids one of them neticdomain wall resistance value.
Shown in Figure 6 is the example of those data input/output methods.By above the loop or electric lithography circuit (61) following, that be loaded with electric current, just data being write among this loop by this.Data can be with the directional ring of arrow A around this loop.Mode below desire then can adopt during sense data among this loop: between two electric terminals (62) wherein of this loop, form a magnetic tunnel and connect face (top); Or measure any neticdomain wall resistance value (below) that is comprised in the sub-fraction in this loop by two electric terminals (63).
In variation example of the present invention, (do not show among this figure), this magnetic catheters itself can't constitute the loop of inversion nodes of a sealing, but constitute a straight links of forming by inversion node, wherein end in this link possesses a data write device, then possesses a data fetch equipment in the other end of this link.In this example, external control circuit must be fed back to the input end of this link with data from the output terminal of this link with electric means, so as the form that allows data still can seem loop carry out around.
These data loop are positioned among the magnetic field, the vector in this magnetic field in the plane that these loops are formed round-robin temporal frequency scope between between the 1Hz to 200MHz.When this magnetic field circulation time, its magnetic field amplitude may remain unchanged, thereby can form the magnetic field vector track of a circle; Perhaps its magnetic field amplitude may change, thereby can form an oval-shaped magnetic field vector track.An electromagnetism line segment is placed on these belows, loop, in this line segment, flows through alternating current then, just can in the device of small size, reach this effect.As in the larger area device, then the substrate that is loaded with these loops can be placed within four utmost point electromagnet to reach this effect.
This magnetic field intensity should sufficient to guarantee can be pushed neticdomain wall among all directions to via each NOT grid, but its intensity but cannot arrive greatly with the irrelevant situation of this scanning machine system under assemble new neticdomain wall.
Advance the needed magnetic field of neticdomain wall can utilize following mode to adjust via each NOT grid: to change the thickness in these loops, the width that changes these loops and change in order to make the magnetic material in these loops.This magnetic field intensity should be enough to allow this device can not erased because of stray magnetic field on every side.If when the stray magnetic field erase effect constituted a serious problem, the present invention can also utilize MuMetal to carry out shielding protection.The externally-applied magnetic field strength range that optimal device adopted is between 50-2000e.
As shown in Figure 7, the present invention can comprise the lot of data loop on a single substrate, and uses electronics multiplexer and demultiplexer to come the correct loop of addressing.Demonstrate among the figure, between data write driver and multiplexer (71) and data read demultiplexer and amplifier (72), have several loops.
At specific application, can be in the quantity in loop and each loop find best balance between the quantity of NOT grid.If the quantity in loop seldom and in each loop the quantity of NOT grid a lot, be very easy to it is integrated among the encapsulation, and cost is quite cheap; If but because manufacturing defect causes single NOT grid fault, just may cause whole device to break down.This kind array mode also has extremely long data time, because with regard to a specific block, on average, must wait for that very a plurality of clock pulses circulate it is circulated to read the position.The quantity of NOT grid is seldom in each loop if the quantity in loop is a lot, just do not worry that other NOT grid breaks down (because the loop of containing the fault grid can be removed from circuit, and can seriously not reduce whole storage volume), and has the access time extremely fast, but but can have and more read a little and write point (thereby cost can than higher), and difficult it is integrated among the single integrated circuit encapsulation.All graphic loop of all forming in the application's case by 8 grids.But this only is a synoptic diagram, and in fact each loop can comprise thousands of grids.
A specific characteristic of the present invention is not limited in data loop is placed among the two-dimensional plane.Different with CD, magnetic tape storage and magnetic hard disks is, does not need mechanically to access surface of the present invention, so as shown in Figure 8, substrate can be stacked on mutually above the top, forms cube storer of a three-dimensional.This advantage can reach very high data storage density.In case of necessity, all substrates among the same cube are can be shared identical adds circulation magnetic field, keeping each layer synchronous regime each other, and reduces the complexity of device.
The present invention can be designed in order to single serial stream of data of I/O, even in case of necessity, can several loops of parallel use or a plurality of number of plies store group of data words string with multiple bit width.
Because the access time is extremely low, so the present invention and be not suitable for replacing employed Primary Hard Drive driver in the computer.But, the present invention but can be applicable in the following part situation and in other situation:
-can supply the purposes of pouch-type digital music broadcasting machine (for example MP3 player) as temporary transient store digital music.This application need be to store body in order to the low cost that often stores the numerical information of repeat playing in proper order, non-volatile, re-writeable.If utilize the wide planar line of 200nm, just the NOT grid may occupy about 1 μ m
2Area.So by the data link area coverage is 1cm
2Individual layer just can provide the sequence data that can store 12 megabit tuples to store body, this capacity is enough to play 12 hours CD quality music.The mode that adopts multiple-level stack just can extremely cheap cost provides the CD quality music of a few hours.
-can be for the purposes of digital camera as temporary transient store digital photograph.Reach this purpose by the flash type electronic memory at present, but this practice is quite expensive and only have a very limited cycle index that overrides.
Can supply mobile phone, personal note book, palmtop computer and smart card etc. as nonvolatile offline storage.
Claims (15)
1. data memory device with the form storage of digital information that can read, it is characterized in that, it comprises one or more memory components, each memory component comprises that all one can keep and conducts the plane magnetic catheter that is formed on the neticdomain wall among the continuous propagation track, wherein every continuous rail all possesses at least one inversion node, under suitable externally-applied magnetic field effect, can change direction at these inversion node places along the direction of magnetization of the neticdomain wall of this conduit conduction.
2. data memory device as claimed in claim 1, it is characterized in that, every continuous rail all possesses at least one inversion node, under suitable externally-applied magnetic field effect, can be inverted at these inversion node places in fact along the direction of magnetization of the neticdomain wall of this conduit conduction.
3. data memory device as claimed in claim 1 or 2 is characterized in that, every continuous rail all possesses very a plurality of inversion nodes.
4. each described data memory device in the claim as described above is characterized in that conduit system is formed among the loop, so that constitute a continuous propagation track.
5. each described data memory device in the claim as described above, it is characterized in that, conduit can't constitute a complete loop, but constitute a link of forming by inversion node, and be provided for transmitting between two end points the device of data, cause the data still can be around the circuit cycle that seems sealing, this be installed on this link wherein an end comprise a data write device, the other end in this link comprises a data fetch equipment, and comprise an extra circuit, from the output terminal of this link data are fed back to the input end of this link in the electronics mode.
6. each described data memory device in the claim as described above, it is characterized in that inversion node comprises the structure of this conduit and the feature of shape, it is through after adjusting, under suitable externally-applied magnetic field effect, just can allow the direction of magnetization of magnetic domain conduction change.
7. data memory device as claimed in claim 6 is characterized in that, inversion node comprises the structure of this conduit and the feature of shape, and it under the effect of round-robin externally-applied magnetic field, just can allow the direction of magnetization of magnetic domain conduction reverse in fact through after adjusting.
8. as claim 6 or 7 described data memory devices, it is characterized in that inversion node comprises that one is positioned at the portion that departs from a node the place ahead, direction of magnetization can be reversed in this place in fact; And further comprise some, in this partly in, the direction in this conduit can be different with original path, then direction can change again and gets back in the original path, does not therefore have direct conducting path and exist in the part that this departs from.
9. data memory device as claimed in claim 8 is characterized in that, this departs from and comprises with the original path of this conduit and produce 90 ° departing from.
10. data memory device as claimed in claim 8 or 9 is characterized in that, this inversion node is in this conduit return loops structure or comprise a cycloid portion among the topological structure of structural equivalents therewith.
11. data memory device as claimed in claim 10 is characterized in that, comprises a plurality of these cycloid portions that are located among each loop.
12. data memory device as claimed in claim 11, it is characterized in that, comprise several magnetic catheters that are formed at loop, every magnetic catheters all comprises a plurality of cycloids, and these cycloid systems cause the direction counter-rotating in order to rapid mode in the direction of magnetization by the neticdomain wall on it.
13. as each described data memory device in the claim 10 to 12, it is characterized in that each cycloid all has a turning radius, this radius system is between between three times to ten times of this conduit width.
14. each described data memory device in the claim is characterized in that as described above, this magnetic catheters comprises a planar magnetic wire that is positioned on the application substrate.
15. data memory device as claimed in claim 14 is characterized in that, this magnetic wires comprise thickness between between 2nm and the 25nm, the magnetic Nano circuit of width between 50nm and 1 μ m.
Applications Claiming Priority (2)
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|---|---|---|---|
| GB0207160A GB0207160D0 (en) | 2002-03-27 | 2002-03-27 | Data storage device |
| GB0207160.3 | 2002-03-27 |
Publications (2)
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| CN1656568A true CN1656568A (en) | 2005-08-17 |
| CN100452243C CN100452243C (en) | 2009-01-14 |
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| CNB038120003A Expired - Fee Related CN100452243C (en) | 2002-03-27 | 2003-03-25 | Data storage device |
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| EP (1) | EP1514276A1 (en) |
| JP (1) | JP4463564B2 (en) |
| CN (1) | CN100452243C (en) |
| CU (1) | CU23099A3 (en) |
| EA (1) | EA006289B1 (en) |
| GB (1) | GB0207160D0 (en) |
| HK (1) | HK1070982A1 (en) |
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| IS (1) | IS7506A (en) |
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| TW (1) | TWI310938B (en) |
| WO (1) | WO2003083874A1 (en) |
| YU (1) | YU91604A (en) |
| ZA (1) | ZA200407730B (en) |
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| RU2008107998A (en) | 2005-08-03 | 2009-09-10 | Инджениа Текнолоджи Лимитед (Gb) | ACCESS TO MEMORY |
| KR100819142B1 (en) * | 2005-09-29 | 2008-04-07 | 재단법인서울대학교산학협력재단 | Method of generating strong spin waves and spin devices for ultra-high speed information processing using spin waves |
| WO2009037910A1 (en) * | 2007-09-19 | 2009-03-26 | Nec Corporation | Magnetic random access memory, its writing method, and magnetoresistive effect element |
| JP5327543B2 (en) * | 2007-09-20 | 2013-10-30 | 日本電気株式会社 | Magnetic random access memory |
| WO2009122990A1 (en) * | 2008-04-02 | 2009-10-08 | 日本電気株式会社 | Magnetoresistive effect element and magnetic random access memory |
| DE112012000271B4 (en) | 2011-02-16 | 2022-01-05 | International Business Machines Corporation | Ferromagnetic unit that ensures high domain wall velocities |
| JP5653379B2 (en) | 2012-03-23 | 2015-01-14 | 株式会社東芝 | Magnetic storage element, magnetic memory, and magnetic storage device |
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| US3774179A (en) * | 1971-07-22 | 1973-11-20 | J Wiegand | Ferromagnetic storage medium |
| US3811120A (en) * | 1973-04-05 | 1974-05-14 | Bell Telephone Labor Inc | Magnetic domain propagation arrangement having channels defined by straight line boundaries |
| GB9925213D0 (en) * | 1999-10-25 | 1999-12-22 | Univ Cambridge Tech | Magnetic logic elements |
| DE10033486A1 (en) * | 2000-07-10 | 2002-01-24 | Infineon Technologies Ag | Integrated memory (MRAM), whose memory cells contain magnetoresistive memory effect |
| GB0019506D0 (en) * | 2000-08-08 | 2000-09-27 | Univ Cambridge Tech | Magnetic element with switchable domain structure |
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- 2002-03-27 GB GB0207160A patent/GB0207160D0/en not_active Ceased
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- 2003-03-25 MX MXPA04009307A patent/MXPA04009307A/en not_active Application Discontinuation
- 2003-03-25 CN CNB038120003A patent/CN100452243C/en not_active Expired - Fee Related
- 2003-03-25 EP EP03745327A patent/EP1514276A1/en not_active Withdrawn
- 2003-03-25 NZ NZ535781A patent/NZ535781A/en unknown
- 2003-03-25 MY MYPI20031073 patent/MY135448A/en unknown
- 2003-03-25 EA EA200401263A patent/EA006289B1/en not_active IP Right Cessation
- 2003-03-25 YU YU91604A patent/YU91604A/en unknown
- 2003-03-25 OA OA1200400256A patent/OA12989A/en unknown
- 2003-03-25 CU CU20040210A patent/CU23099A3/en unknown
- 2003-03-25 WO PCT/GB2003/001266 patent/WO2003083874A1/en active IP Right Grant
- 2003-03-25 JP JP2003581205A patent/JP4463564B2/en not_active Expired - Fee Related
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- 2004-09-21 NO NO20043958A patent/NO20043958L/en unknown
- 2004-09-23 ZA ZA200407730A patent/ZA200407730B/en unknown
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- 2004-10-15 IS IS7506A patent/IS7506A/en unknown
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2005
- 2005-05-17 HK HK05104090A patent/HK1070982A1/en not_active IP Right Cessation
Also Published As
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| TW200306536A (en) | 2003-11-16 |
| OA12989A (en) | 2006-10-13 |
| NO20043958L (en) | 2004-12-27 |
| JP4463564B2 (en) | 2010-05-19 |
| NZ535781A (en) | 2005-05-27 |
| YU91604A (en) | 2006-05-25 |
| TWI310938B (en) | 2009-06-11 |
| MY135448A (en) | 2008-04-30 |
| MXPA04009307A (en) | 2005-07-05 |
| HK1070982A1 (en) | 2005-06-30 |
| EA006289B1 (en) | 2005-10-27 |
| GB0207160D0 (en) | 2002-05-08 |
| IS7506A (en) | 2004-10-15 |
| WO2003083874A8 (en) | 2005-02-17 |
| CN100452243C (en) | 2009-01-14 |
| EA200401263A1 (en) | 2005-04-28 |
| JP2006504210A (en) | 2006-02-02 |
| PL373815A1 (en) | 2005-09-19 |
| HRP20040884A2 (en) | 2005-02-28 |
| CU23099A3 (en) | 2005-12-20 |
| ZA200407730B (en) | 2005-08-31 |
| EP1514276A1 (en) | 2005-03-16 |
| WO2003083874A1 (en) | 2003-10-09 |
| MA27296A1 (en) | 2005-05-02 |
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