EA200401263A1 - MEMORY DEVICE - Google Patents

MEMORY DEVICE

Info

Publication number
EA200401263A1
EA200401263A1 EA200401263A EA200401263A EA200401263A1 EA 200401263 A1 EA200401263 A1 EA 200401263A1 EA 200401263 A EA200401263 A EA 200401263A EA 200401263 A EA200401263 A EA 200401263A EA 200401263 A1 EA200401263 A1 EA 200401263A1
Authority
EA
Eurasian Patent Office
Prior art keywords
domain wall
storage
continuous
memory device
magnetization
Prior art date
Application number
EA200401263A
Other languages
Russian (ru)
Other versions
EA006289B1 (en
Inventor
Расселл Пол Кауберн
Original Assignee
Истгейт Инвестментс Лимитед
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Истгейт Инвестментс Лимитед filed Critical Истгейт Инвестментс Лимитед
Publication of EA200401263A1 publication Critical patent/EA200401263A1/en
Publication of EA006289B1 publication Critical patent/EA006289B1/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
    • G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
    • G11C19/0808—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation
    • G11C19/0816—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation using a rotating or alternating coplanar magnetic field
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/81—Array wherein the array conductors, e.g. word lines, bit lines, are made of nanowires

Abstract

Описано запоминающее устройство, предназначенное для хранения цифровой информации в пригодной для чтения форме, которое состоит из одного или нескольких запоминающих элементов, причем каждый запоминающий элемент содержит в себе планарное магнитное проводящее звено, выполненное с возможностью поддержки и продвижения магнитной доменной стенки, выполненное в форме непрерывной дорожки продвижения. При этом на каждой непрерывной дорожке предусмотрен по меньшей мере один, а в предпочтительном варианте осуществления изобретения большое количество узлов инверсии, в которых направление намагниченности доменной стенки, продвигающейся по проводящему звену под действием соответствующего приложенного поля, изменяется.Международная заявка была опубликована вместе с отчетом о международном поиске.A storage device for storing digital information in a readable form is described, which consists of one or more storage elements, each storage element contains a planar magnetic conductive element made with the ability to support and promote a magnetic domain wall, made in the form of a continuous promotion paths. At the same time, at least one, and in the preferred embodiment of the invention, a large number of inversion nodes is provided on each continuous track, in which the direction of the magnetization of the domain wall advancing along the conducting link changes under the action of the corresponding applied field. The international application was published together with the report international search.

EA200401263A 2002-03-27 2003-03-25 Data storage device EA006289B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0207160A GB0207160D0 (en) 2002-03-27 2002-03-27 Data storage device
PCT/GB2003/001266 WO2003083874A1 (en) 2002-03-27 2003-03-25 Data storage device

Publications (2)

Publication Number Publication Date
EA200401263A1 true EA200401263A1 (en) 2005-04-28
EA006289B1 EA006289B1 (en) 2005-10-27

Family

ID=9933766

Family Applications (1)

Application Number Title Priority Date Filing Date
EA200401263A EA006289B1 (en) 2002-03-27 2003-03-25 Data storage device

Country Status (20)

Country Link
EP (1) EP1514276A1 (en)
JP (1) JP4463564B2 (en)
CN (1) CN100452243C (en)
CU (1) CU23099A3 (en)
EA (1) EA006289B1 (en)
GB (1) GB0207160D0 (en)
HK (1) HK1070982A1 (en)
HR (1) HRP20040884A2 (en)
IS (1) IS7506A (en)
MA (1) MA27296A1 (en)
MX (1) MXPA04009307A (en)
MY (1) MY135448A (en)
NO (1) NO20043958L (en)
NZ (1) NZ535781A (en)
OA (1) OA12989A (en)
PL (1) PL373815A1 (en)
TW (1) TWI310938B (en)
WO (1) WO2003083874A1 (en)
YU (1) YU91604A (en)
ZA (1) ZA200407730B (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2008107998A (en) 2005-08-03 2009-09-10 Инджениа Текнолоджи Лимитед (Gb) ACCESS TO MEMORY
KR100819142B1 (en) * 2005-09-29 2008-04-07 재단법인서울대학교산학협력재단 Method of generating strong spin waves and spin devices for ultra-high speed information processing using spin waves
WO2009037910A1 (en) * 2007-09-19 2009-03-26 Nec Corporation Magnetic random access memory, its writing method, and magnetoresistive effect element
JP5327543B2 (en) * 2007-09-20 2013-10-30 日本電気株式会社 Magnetic random access memory
WO2009122990A1 (en) * 2008-04-02 2009-10-08 日本電気株式会社 Magnetoresistive effect element and magnetic random access memory
DE112012000271B4 (en) 2011-02-16 2022-01-05 International Business Machines Corporation Ferromagnetic unit that ensures high domain wall velocities
JP5653379B2 (en) 2012-03-23 2015-01-14 株式会社東芝 Magnetic storage element, magnetic memory, and magnetic storage device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3774179A (en) * 1971-07-22 1973-11-20 J Wiegand Ferromagnetic storage medium
US3811120A (en) * 1973-04-05 1974-05-14 Bell Telephone Labor Inc Magnetic domain propagation arrangement having channels defined by straight line boundaries
GB9925213D0 (en) * 1999-10-25 1999-12-22 Univ Cambridge Tech Magnetic logic elements
DE10033486A1 (en) * 2000-07-10 2002-01-24 Infineon Technologies Ag Integrated memory (MRAM), whose memory cells contain magnetoresistive memory effect
GB0019506D0 (en) * 2000-08-08 2000-09-27 Univ Cambridge Tech Magnetic element with switchable domain structure

Also Published As

Publication number Publication date
TW200306536A (en) 2003-11-16
OA12989A (en) 2006-10-13
NO20043958L (en) 2004-12-27
JP4463564B2 (en) 2010-05-19
CN1656568A (en) 2005-08-17
NZ535781A (en) 2005-05-27
YU91604A (en) 2006-05-25
TWI310938B (en) 2009-06-11
MY135448A (en) 2008-04-30
MXPA04009307A (en) 2005-07-05
HK1070982A1 (en) 2005-06-30
EA006289B1 (en) 2005-10-27
GB0207160D0 (en) 2002-05-08
IS7506A (en) 2004-10-15
WO2003083874A8 (en) 2005-02-17
CN100452243C (en) 2009-01-14
JP2006504210A (en) 2006-02-02
PL373815A1 (en) 2005-09-19
HRP20040884A2 (en) 2005-02-28
CU23099A3 (en) 2005-12-20
ZA200407730B (en) 2005-08-31
EP1514276A1 (en) 2005-03-16
WO2003083874A1 (en) 2003-10-09
MA27296A1 (en) 2005-05-02

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Legal Events

Date Code Title Description
MM4A Lapse of a eurasian patent due to non-payment of renewal fees within the time limit in the following designated state(s)

Designated state(s): AM AZ BY KZ KG MD TJ TM

MM4A Lapse of a eurasian patent due to non-payment of renewal fees within the time limit in the following designated state(s)

Designated state(s): RU