GB2403080A - Data storage device - Google Patents

Data storage device Download PDF

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Publication number
GB2403080A
GB2403080A GB0422377A GB0422377A GB2403080A GB 2403080 A GB2403080 A GB 2403080A GB 0422377 A GB0422377 A GB 0422377A GB 0422377 A GB0422377 A GB 0422377A GB 2403080 A GB2403080 A GB 2403080A
Authority
GB
United Kingdom
Prior art keywords
storage device
data storage
domain wall
propagating
track
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB0422377A
Other versions
GB2403080B (en
GB2403080A8 (en
GB0422377D0 (en
Inventor
Russell Paul Cowburn
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EASTGATE INVEST Ltd
eastgate Investments Ltd
Original Assignee
EASTGATE INVEST Ltd
eastgate Investments Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GBGB0028092.5A external-priority patent/GB0028092D0/en
Priority claimed from GB0207160A external-priority patent/GB0207160D0/en
Application filed by EASTGATE INVEST Ltd, eastgate Investments Ltd filed Critical EASTGATE INVEST Ltd
Publication of GB0422377D0 publication Critical patent/GB0422377D0/en
Publication of GB2403080A publication Critical patent/GB2403080A/en
Publication of GB2403080A8 publication Critical patent/GB2403080A8/en
Application granted granted Critical
Publication of GB2403080B publication Critical patent/GB2403080B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/18—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using galvano-magnetic devices, e.g. Hall-effect devices
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N10/00—Quantum computing, i.e. information processing based on quantum-mechanical phenomena
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
    • G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
    • G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
    • G11C19/0808—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
    • G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
    • G11C19/0808—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation
    • G11C19/0816—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation using a rotating or alternating coplanar magnetic field
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/81—Array wherein the array conductors, e.g. word lines, bit lines, are made of nanowires

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Computer Hardware Design (AREA)
  • Theoretical Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • Chemical & Material Sciences (AREA)
  • General Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Artificial Intelligence (AREA)
  • Computational Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Data Mining & Analysis (AREA)
  • Evolutionary Computation (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Analysis (AREA)
  • Mathematical Optimization (AREA)
  • Pure & Applied Mathematics (AREA)
  • Software Systems (AREA)
  • Mram Or Spin Memory Techniques (AREA)

Abstract

A data storage device for storing digital information in a readable form is described made up of one or more memory elements, each memory element comprising a planar magnetic conduit capable of sustaining and propagating a magnetic domain wall formed into a continuous propagation track. Each continuous track is provided with at least one and preferably a large number of inversion nodes whereat the magnetisation direction of a domain wall propagating along the conduit under action of a suitable applied field, such as a rotating magnetic field, is changed.

Description

GB 2403080 A continuation (72) Inventor(s): Russell Paul Cowburn (74)
Agent and/or Address for Service: Novagraaf Patents Limited The Crescent, 54 Blossom Street, YORK, YO24 TAP, United Kingdom
GB0422377A 2000-11-17 2003-03-25 Data storage device Expired - Fee Related GB2403080B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GBGB0028092.5A GB0028092D0 (en) 2000-11-17 2000-11-17 Magnetic logic elements
GB0207160A GB0207160D0 (en) 2002-03-27 2002-03-27 Data storage device
PCT/GB2003/001266 WO2003083874A1 (en) 2002-03-27 2003-03-25 Data storage device

Publications (4)

Publication Number Publication Date
GB0422377D0 GB0422377D0 (en) 2004-11-10
GB2403080A true GB2403080A (en) 2004-12-22
GB2403080A8 GB2403080A8 (en) 2005-03-01
GB2403080B GB2403080B (en) 2005-07-13

Family

ID=34680418

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0422377A Expired - Fee Related GB2403080B (en) 2000-11-17 2003-03-25 Data storage device

Country Status (2)

Country Link
KR (1) KR100912436B1 (en)
GB (1) GB2403080B (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2430318A (en) * 2005-08-03 2007-03-21 Ingenia Technology Ltd Multiple layer magnetic logic memory device
GB2436490A (en) * 2005-08-03 2007-09-26 Ingenia Technology Ltd Multiple layer magnetic logic memory device
US7554835B2 (en) 2005-08-03 2009-06-30 Ingenia Technology Limited Memory access

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100813261B1 (en) * 2006-07-13 2008-03-13 삼성전자주식회사 Semiconductor device using magnetic domain wall moving
KR100790891B1 (en) * 2006-09-29 2008-01-02 삼성전자주식회사 Magnetic recording device
KR100873637B1 (en) 2006-11-28 2008-12-12 삼성전자주식회사 Apparatus of domain wall motion and Data storage device using the same
KR20090127705A (en) 2008-06-09 2009-12-14 삼성전자주식회사 Magnetic racetrack memory device including write-back loop

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3774179A (en) * 1971-07-22 1973-11-20 J Wiegand Ferromagnetic storage medium
US3811120A (en) * 1973-04-05 1974-05-14 Bell Telephone Labor Inc Magnetic domain propagation arrangement having channels defined by straight line boundaries
WO2001031789A2 (en) * 1999-10-25 2001-05-03 Cambridge University Technical Services Limited Magnetic logic device having magnetic quantum dots
WO2002013208A1 (en) * 2000-08-08 2002-02-14 Cambridge University Technical Services Limited Magnetic element with switchable domain structure

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3774179A (en) * 1971-07-22 1973-11-20 J Wiegand Ferromagnetic storage medium
US3811120A (en) * 1973-04-05 1974-05-14 Bell Telephone Labor Inc Magnetic domain propagation arrangement having channels defined by straight line boundaries
WO2001031789A2 (en) * 1999-10-25 2001-05-03 Cambridge University Technical Services Limited Magnetic logic device having magnetic quantum dots
WO2002013208A1 (en) * 2000-08-08 2002-02-14 Cambridge University Technical Services Limited Magnetic element with switchable domain structure

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Ono T et al; "Magnetization reversal and electric transport in ferromagnetic nanowires" Materials Science and Engineering; Vol 84, no 1-2, pages 126-132 *
Taniyama T et al; "Control of domain structures and magnetotransport properties in patterned ferromagnetic wires" Applied Physics Letters, AIP, Vol 76, no 5, pages 613-615 *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2430318A (en) * 2005-08-03 2007-03-21 Ingenia Technology Ltd Multiple layer magnetic logic memory device
GB2430318B (en) * 2005-08-03 2007-08-22 Ingenia Technology Ltd Memory access
GB2436490A (en) * 2005-08-03 2007-09-26 Ingenia Technology Ltd Multiple layer magnetic logic memory device
GB2436490B (en) * 2005-08-03 2007-11-14 Ingenia Technology Ltd Memory access
US7554835B2 (en) 2005-08-03 2009-06-30 Ingenia Technology Limited Memory access

Also Published As

Publication number Publication date
GB2403080B (en) 2005-07-13
GB2403080A8 (en) 2005-03-01
GB0422377D0 (en) 2004-11-10
KR100912436B1 (en) 2009-08-14
KR20040108684A (en) 2004-12-24

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