LV15646A - Paņēmiens itrija monoksīda plēves nogulsnēšanai un itrija monoksīda pārklājums - Google Patents
Paņēmiens itrija monoksīda plēves nogulsnēšanai un itrija monoksīda pārklājumsInfo
- Publication number
- LV15646A LV15646A LVP-20-90A LVP2020000090A LV15646A LV 15646 A LV15646 A LV 15646A LV P2020000090 A LVP2020000090 A LV P2020000090A LV 15646 A LV15646 A LV 15646A
- Authority
- LV
- Latvia
- Prior art keywords
- yttrium
- substrate
- source
- magnetron
- monoxide
- Prior art date
Links
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/083—Oxides of refractory metals or yttrium
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0042—Controlling partial pressure or flow rate of reactive or inert gases with feedback of measurements
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
- C23C14/544—Controlling the film thickness or evaporation rate using measurement in the gas phase
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02425—Conductive materials, e.g. metallic silicides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Fluid Mechanics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Catalysts (AREA)
Abstract
Izgudrojums attiecas uz nanopārklājumiem, it īpaši uz nanopārklājumiem, kas uzklāti ar plazmas vakuuma tehnoloģijām un kuriem ir pusvadītāja īpašības.Piedāvātais itrija monoksīda (YO) kārtiņas uzklāšanas uz pamatnes paņēmiens, izmantojot reaktīvo magnetrono izputināšanu, ietver šādus soļus: (i) pamatnes ievietošanu vakuuma kamerā, kurā ir magnetrons ar itrija avotu daļiņu izputināšanai, procesa gāzu ievades līdzekli daļējai magnetrona pārklāšanai un pamatne, kuras virsma ir vērsta pret avotu; (ii) magnetrona darbināšanu, lai uzputinātu itrija daļiņas no itrija avota un pārklātu pamatnes virsmu, ieskaitot procesa gāzu ievadīšanu kamerā; (iii) gāzu izvadīšanu no vakuuma kameras un procesa spiediena radīšanu no 1x10-3 līdz 5x10-3 Torr, vienlaikus ielaižot procesa gāzes un turpinot itrija daļiņu izputināšanu no itrija avota; tiklīdz uz pamatnes virsmas tiek sasniegts vēlamais pārklājuma biezums, magnetrons tiek izslēgts. Saskaņā paņēmiena vēlamo iemiesojumu itrija daļiņu izputināšanu no itrija avota (ii) solī veic no 290 līdz 630 K temperatūrā. Saskaņā ar citu paņēmiena iemiesojumu pamatne (i) solī tiek novietota tā, lai tās virsma, kas ir vērsta pret avotu, atrodas 30–70° leņķī pret magnetronu un itrija avotu. Tiek piedāvāta arī jauna pārklājuma struktūra, kas satur pamatni un itrija monoksīda (YO) pārklājuma slāni, kas uzklāts uz pamatnes, kur itrija monoksīda pārklājuma slāņa biezums ir no 297 līdz 448 nm, un turklāt pamatne ir izvēlēta no grupas, kas sastāv no stikla, polimēra un metāla.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
LVP-20-90A LV15646B (lv) | 2020-12-11 | 2020-12-11 | Paņēmiens itrija monoksīda plēves nogulsnēšanai un itrija monoksīda pārklājums |
EP21208104.6A EP4033003B1 (en) | 2020-12-11 | 2021-11-13 | Method for deposition of yttrium monoxide film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
LVP-20-90A LV15646B (lv) | 2020-12-11 | 2020-12-11 | Paņēmiens itrija monoksīda plēves nogulsnēšanai un itrija monoksīda pārklājums |
Publications (2)
Publication Number | Publication Date |
---|---|
LV15646A true LV15646A (lv) | 2022-06-20 |
LV15646B LV15646B (lv) | 2023-01-20 |
Family
ID=82019150
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
LVP-20-90A LV15646B (lv) | 2020-12-11 | 2020-12-11 | Paņēmiens itrija monoksīda plēves nogulsnēšanai un itrija monoksīda pārklājums |
Country Status (2)
Country | Link |
---|---|
EP (1) | EP4033003B1 (lv) |
LV (1) | LV15646B (lv) |
-
2020
- 2020-12-11 LV LVP-20-90A patent/LV15646B/lv unknown
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2021
- 2021-11-13 EP EP21208104.6A patent/EP4033003B1/en active Active
Non-Patent Citations (1)
Title |
---|
KAMINAGA KENICHI ET AL: "A divalent rare earth oxide semiconductor: Yttrium monoxide", APPLIED PHYSICS LETTERS, A I P PUBLISHING LLC, US, vol. 108, no. 12, 21 March 2016 (2016-03-21), XP012206175, ISSN: 0003-6951, [retrieved on 19010101], DOI: 10.1063/1.4944330 * |
Also Published As
Publication number | Publication date |
---|---|
EP4033003B1 (en) | 2023-11-01 |
LV15646B (lv) | 2023-01-20 |
EP4033003A1 (en) | 2022-07-27 |
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