LV15646A - Paņēmiens itrija monoksīda plēves nogulsnēšanai un itrija monoksīda pārklājums - Google Patents

Paņēmiens itrija monoksīda plēves nogulsnēšanai un itrija monoksīda pārklājums

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Publication number
LV15646A
LV15646A LVP-20-90A LVP2020000090A LV15646A LV 15646 A LV15646 A LV 15646A LV P2020000090 A LVP2020000090 A LV P2020000090A LV 15646 A LV15646 A LV 15646A
Authority
LV
Latvia
Prior art keywords
yttrium
substrate
source
magnetron
monoxide
Prior art date
Application number
LVP-20-90A
Other languages
English (en)
Inventor
Halil ARSLAN
Original Assignee
Latvijas Universitātes Cietvielu Fizikas Institūts
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Latvijas Universitātes Cietvielu Fizikas Institūts filed Critical Latvijas Universitātes Cietvielu Fizikas Institūts
Priority to LVP-20-90A priority Critical patent/LV15646B/lv
Priority to EP21208104.6A priority patent/EP4033003B1/en
Publication of LV15646A publication Critical patent/LV15646A/lv
Publication of LV15646B publication Critical patent/LV15646B/lv

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Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08Oxides
    • C23C14/083Oxides of refractory metals or yttrium
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021Reactive sputtering or evaporation
    • C23C14/0036Reactive sputtering
    • C23C14/0042Controlling partial pressure or flow rate of reactive or inert gases with feedback of measurements
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54Controlling or regulating the coating process
    • C23C14/542Controlling the film thickness or evaporation rate
    • C23C14/544Controlling the film thickness or evaporation rate using measurement in the gas phase
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/0237Materials
    • H01L21/02373Group 14 semiconducting materials
    • H01L21/02381Silicon, silicon germanium, germanium
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/0237Materials
    • H01L21/02422Non-crystalline insulating materials, e.g. glass, polymers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/0237Materials
    • H01L21/02425Conductive materials, e.g. metallic silicides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02565Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02587Structure
    • H01L21/0259Microstructure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/02631Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02656Special treatments
    • H01L21/02658Pretreatments

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Fluid Mechanics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Catalysts (AREA)

Abstract

Izgudrojums attiecas uz nanopārklājumiem, it īpaši uz nanopārklājumiem, kas uzklāti ar plazmas vakuuma tehnoloģijām un kuriem ir pusvadītāja īpašības.Piedāvātais itrija monoksīda (YO) kārtiņas uzklāšanas uz pamatnes paņēmiens, izmantojot reaktīvo magnetrono izputināšanu, ietver šādus soļus: (i) pamatnes ievietošanu vakuuma kamerā, kurā ir magnetrons ar itrija avotu daļiņu izputināšanai, procesa gāzu ievades līdzekli daļējai magnetrona pārklāšanai un pamatne, kuras virsma ir vērsta pret avotu; (ii) magnetrona darbināšanu, lai uzputinātu itrija daļiņas no itrija avota un pārklātu pamatnes virsmu, ieskaitot procesa gāzu ievadīšanu kamerā; (iii) gāzu izvadīšanu no vakuuma kameras un procesa spiediena radīšanu no 1x10-3 līdz 5x10-3 Torr, vienlaikus ielaižot procesa gāzes un turpinot itrija daļiņu izputināšanu no itrija avota; tiklīdz uz pamatnes virsmas tiek sasniegts vēlamais pārklājuma biezums, magnetrons tiek izslēgts. Saskaņā paņēmiena vēlamo iemiesojumu itrija daļiņu izputināšanu no itrija avota (ii) solī veic no 290 līdz 630 K temperatūrā. Saskaņā ar citu paņēmiena iemiesojumu pamatne (i) solī tiek novietota tā, lai tās virsma, kas ir vērsta pret avotu, atrodas 30–70° leņķī pret magnetronu un itrija avotu. Tiek piedāvāta arī jauna pārklājuma struktūra, kas satur pamatni un itrija monoksīda (YO) pārklājuma slāni, kas uzklāts uz pamatnes, kur itrija monoksīda pārklājuma slāņa biezums ir no 297 līdz 448 nm, un turklāt pamatne ir izvēlēta no grupas, kas sastāv no stikla, polimēra un metāla.
LVP-20-90A 2020-12-11 2020-12-11 Paņēmiens itrija monoksīda plēves nogulsnēšanai un itrija monoksīda pārklājums LV15646B (lv)

Priority Applications (2)

Application Number Priority Date Filing Date Title
LVP-20-90A LV15646B (lv) 2020-12-11 2020-12-11 Paņēmiens itrija monoksīda plēves nogulsnēšanai un itrija monoksīda pārklājums
EP21208104.6A EP4033003B1 (en) 2020-12-11 2021-11-13 Method for deposition of yttrium monoxide film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
LVP-20-90A LV15646B (lv) 2020-12-11 2020-12-11 Paņēmiens itrija monoksīda plēves nogulsnēšanai un itrija monoksīda pārklājums

Publications (2)

Publication Number Publication Date
LV15646A true LV15646A (lv) 2022-06-20
LV15646B LV15646B (lv) 2023-01-20

Family

ID=82019150

Family Applications (1)

Application Number Title Priority Date Filing Date
LVP-20-90A LV15646B (lv) 2020-12-11 2020-12-11 Paņēmiens itrija monoksīda plēves nogulsnēšanai un itrija monoksīda pārklājums

Country Status (2)

Country Link
EP (1) EP4033003B1 (lv)
LV (1) LV15646B (lv)

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
KAMINAGA KENICHI ET AL: "A divalent rare earth oxide semiconductor: Yttrium monoxide", APPLIED PHYSICS LETTERS, A I P PUBLISHING LLC, US, vol. 108, no. 12, 21 March 2016 (2016-03-21), XP012206175, ISSN: 0003-6951, [retrieved on 19010101], DOI: 10.1063/1.4944330 *

Also Published As

Publication number Publication date
EP4033003B1 (en) 2023-11-01
LV15646B (lv) 2023-01-20
EP4033003A1 (en) 2022-07-27

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