LV11288B - Removal of surface contaminants by irradiation - Google Patents

Removal of surface contaminants by irradiation Download PDF

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Publication number
LV11288B
LV11288B LVP-95-306A LV950306A LV11288B LV 11288 B LV11288 B LV 11288B LV 950306 A LV950306 A LV 950306A LV 11288 B LV11288 B LV 11288B
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treated
flow
gas
substrate
laminar
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LVP-95-306A
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LV11288A (lv
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Audrey C Engelsberg
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Cauldron Lp
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Publication of LV11288B publication Critical patent/LV11288B/en

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • B08B7/0057—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like by ultraviolet radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • B08B7/0042—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like by laser
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/14—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor
    • B23K26/142—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor for the removal of by-products
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/14—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor
    • B23K26/1435—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor involving specially adapted flow control means
    • B23K26/1436—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor involving specially adapted flow control means for pressure control
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/14—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor
    • B23K26/1435—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor involving specially adapted flow control means
    • B23K26/1437—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor involving specially adapted flow control means for flow rate control
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/14—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor
    • B23K26/1462—Nozzles; Features related to nozzles
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • G03F7/704—Scanned exposure beam, e.g. raster-, rotary- and vector scanning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/32051—Deposition of metallic or metal-silicide layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76819—Smoothing of the dielectric

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Environmental & Geological Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Fluid Mechanics (AREA)
  • Toxicology (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning In General (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
  • Drying Of Semiconductors (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Steering Controls (AREA)
  • Cultivation Of Plants (AREA)
  • Processing Of Solid Wastes (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)

Claims (20)

  1. LV 11288 IZGUDROJUMA FORMULA 1. Virsmas piesārņojumu noņemšanas paņēmiens no apstrādājamās virsmas, saglabājot apstrādājamās virsmas kristālisko struktūru, kas ietver: lamināras gāzes plūsmas novadīšanu pāri apstrādājamai virsmai turklāt šī gāze ir inerta attiecībā pret apstrādājamo virsmu; minētās apstrādājamās virsmas apstarošanu ar lielas enerģijas starojumu, kura blīvums un ilgums ir pietiekams,lai noņemtu virsmas piesārņojumus no apstrādājamās virsmas, bet nepietiekams, lai pārveidotu apstrādājamās virsmas kristālisko struktūru.
  2. 2. Paņēmiens saskaņā ar 1.punktu, kas atšķiras ar to,ka lamināro gāzes plūsmu izraisa gāzes plūsma,kuru ar spiedienu ievada caur filtru, kas novietots plūsmā apstrādājamās virsmas priekšā.
  3. 3. Paņēmiens saskaņā ar 2.punktu, kas atšķiras ar to,ka lamināro gāzes plūsmu izraisa gāzes plūsma,kuru ievada jau-cējkamerā,kas novietota plūsmā aiz filtra.
  4. 4. Paņēmiens saskaņā ar 1.punktu, kas atšķiras ar to,ka pirms laminārās plūsmas ievadīšanas stadijas minēto apstrādājamo virsmu novieto tieši pretī plūsmas kanāla virsmai,kuram ir tāda konfigurācija,kas nodrošina šo lamināro plūsmu.
  5. 5. Paņēmiens saskaņā ar 4.punktu, kas atšķiras ar to, ka substrāta virsmu pie plūsmas kanāla virsmas notur vakuums. 2
  6. 6. Paņēmiens saskaņā ar 1.punktu, kas atšķiras ar to,ka pirms laminārās plūsmas ievadīšanas apstrādājamo virsmu novieto caurteces plūsmā tādā veidā, lai apstrādājamā virsma būtu vērsta pretī gravitācijas spēkiem.
  7. 7. Paņēmiens saskaņā ar 6.punktu, kas atšķiras ar to, ka uz apstrādājamo virsmu leņķī pret lamināro plūsmu raida sekundāru inertas gāzes plūsmu.
  8. 8. Paņēmiens saskaņā ar 1.punktu, kas atšķiras ar to, ka lamināro plūsmu izraisa gāzes plūsma, ko papildina kompresora darbība,kas novietots plūsmā apstrādājamās virsmas priekšā.
  9. 9. Paņēmiens saskaņā ar 1.punktu, kas atšķiras ar to, ka lamināro plūsmu izraisa gāzes plūsma, ko papildina sūkņa darbība,kas novietots plūsmā apstrādājamās virsmas priekšā.
  10. 10. Paņēmiens saskaņā ar 1.punktu, kas atšķiras ar to,ka lamināro plūsmu uz izeju novada ar sūcējsūkni,kas novietots plūsmā aiz apstrādājamās virsmas.
  11. 11. Paņēmiens saskaņā ar 1.punktu, kas atšķiras ar to ,ka laminārā gāzes plūsma ir argona lamināra gāzes plūsma.
  12. 12. Paņēmiens saskaņā ar 1.punktu, kas a t š ķ i r a s ..ar to, ka laminārā plūsma šķērso apstrādājamo virsmu ar ātrumu, kura profils būtībā ir viendabīgs un būtībā paralēls apstrādājamai virsmai .
  13. 13.Ierīce virsmas piesārņojumu noņemšanai no apstrādājamās substrāta virsmas,saglabājot apstrādājamās virsmas kristālisko struk- 3 LV 11288 tūru,kas satur: rezervuāru gāzei, kas ir inerta attiecībā pret apstrādājamo virsmu; apvalku minētā substrāta apstrādājamās virsmas atbalstam un inertās laminārās gāzes plūsmas novadīšanai no rezervuāra pāri apstrādājamai virsmai; starojuma ierīci apstrādājamās virsmas apstarošanai ar lielas enerģijas starojumu, kura blīvums un ilgums ir pietiekams,lai noņemtu virsmas piesārņojumus no apstrādājamās virsmas, bet nepietiekams , lai pārveidotu apstrādājmās virsmas kristālisko struktūru.
  14. 14.Ierīce saskaņā ar 13.punktu, kas atšķiras ar to, ka šis apvalks ietver plūsmas kanālu, kuram ir padziļinājums apstrādājamās virsmas ievietošanai.
  15. 15.Ierīce saskaņā ar 13.punktu, kas atšķiras ar to, ka plūsmas kanāla ieejas zonā atrodas filtra mezgls,lai laminārās plūsmas iekšienē ģenerētu ātruma profilu,kas būtībā ir viendabīgs un būtībā paralēls apstrādājamai virsmai.
  16. 16.Ierīce saskaņā ar 14.punktu, kas atšķiras ar to, ka apvalks ietver jaucējkameru no gāzes rezervuāra izplūstošās gāzes plūsmas sajaukšanai, turklāt šī jaucējkamera novietota plūsmā filtra mezgla priekšā.
  17. 17.Ierīce saskaņā ar 13.punktu, kas atšķiras ar to, ka korpuss ietver vakuummehānismu apstrādājamās virsmas noturēšanai padziļinājumā.
  18. 18.Ierīce saskaņā ar 13.punktu, kas atšķiras ar to, 4 ka korpuss ietver padziļinājumu apstrādājamās virsmas noturēšanai stāvoklī,kas ir pretējs gravitācijas spēka virzienam.
  19. 19.Ierīce saskaņā ar 17.punktu, kas atšķiras ar to, ka korpuss ietver palīgierīci sekundāras inertās gāzes plūsmas novadīšanai uz apstrādājamo virsmu, turklāt sekundāro inertās gāzes plūsmu virza uz apstrādājamo virsmu leņķī pret apstrādājamo virsmu.
  20. 20.Ierīce virsmas piesārņojuma noņemšanai no apstrādājamās substrāta virsmas,saglabājot apstrādājamas virsmas kristālisko struktūru, kas satur: rezervuāru gāzei, kas ir inerta attiecībā pret apstrādājamo virsmu; apvalku minētā substrāta apstrādājamās virsmas noturēšanai stāvoklī, kas ir pretējs gravitācijas spēka virzienam un inertās gāzes plūsmas novadīšanai no rezerevuāra pāri apstrādājamai virsmai; starojuma ierīci apstrādājamās virsmas apstarošanai ar lielas enerģijas starojumu, kura blīvums un ilgums ir pietiekams,lai noņemtu virsmas piesārņojumus no apstrādājamās virsmas, bet nepietiekams , lai pārveidotu apstrādājmās virsmas kristālisko struktūru.
LVP-95-306A 1993-04-12 1995-10-11 Removal of surface contaminants by irradiation LV11288B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US4516593A 1993-04-12 1993-04-12
PCT/US1994/003907 WO1994023854A1 (en) 1993-04-12 1994-04-11 Removal of surface contaminants by irradiation

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LV11288A LV11288A (lv) 1996-06-20
LV11288B true LV11288B (en) 1996-12-20

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EP (1) EP0693978B1 (lv)
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CN (1) CN1066644C (lv)
AT (1) ATE186859T1 (lv)
AU (1) AU684772B2 (lv)
BR (1) BR9405973A (lv)
CA (1) CA2160255A1 (lv)
CZ (1) CZ267195A3 (lv)
DE (1) DE69421806D1 (lv)
FI (1) FI954837A0 (lv)
HU (1) HUT73857A (lv)
LV (1) LV11288B (lv)
NO (1) NO954027L (lv)
RU (1) RU2136467C1 (lv)
SG (1) SG41949A1 (lv)
TW (1) TW252211B (lv)
WO (1) WO1994023854A1 (lv)

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JPH08509652A (ja) 1996-10-15
CA2160255A1 (en) 1994-10-27
NO954027D0 (no) 1995-10-10
AU684772B2 (en) 1998-01-08
EP0693978A1 (en) 1996-01-31
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LV11288A (lv) 1996-06-20
BR9405973A (pt) 1995-12-12
ATE186859T1 (de) 1999-12-15
TW252211B (lv) 1995-07-21
JP2820534B2 (ja) 1998-11-05
CN1125917A (zh) 1996-07-03
SG41949A1 (en) 1997-08-15
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AU6629794A (en) 1994-11-08
HU9502907D0 (en) 1995-12-28
RU2136467C1 (ru) 1999-09-10
EP0693978B1 (en) 1999-11-24
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CN1066644C (zh) 2001-06-06
DE69421806D1 (de) 1999-12-30
HUT73857A (en) 1996-10-28

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