LU82690A1 - Procede de preparation de films polycristallins semiconducteurs composes ou elementaires et films ainsi obtenus - Google Patents
Procede de preparation de films polycristallins semiconducteurs composes ou elementaires et films ainsi obtenus Download PDFInfo
- Publication number
- LU82690A1 LU82690A1 LU82690A LU82690A LU82690A1 LU 82690 A1 LU82690 A1 LU 82690A1 LU 82690 A LU82690 A LU 82690A LU 82690 A LU82690 A LU 82690A LU 82690 A1 LU82690 A1 LU 82690A1
- Authority
- LU
- Luxembourg
- Prior art keywords
- film
- thickness
- films
- laser beam
- elementary
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 52
- 239000004065 semiconductor Substances 0.000 title claims description 17
- 150000001875 compounds Chemical class 0.000 title claims description 12
- 238000002360 preparation method Methods 0.000 title claims description 12
- 239000010410 layer Substances 0.000 claims description 31
- 230000003287 optical effect Effects 0.000 claims description 19
- 238000002425 crystallisation Methods 0.000 claims description 15
- 230000008025 crystallization Effects 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- 239000010453 quartz Substances 0.000 claims description 12
- 239000011241 protective layer Substances 0.000 claims description 9
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims description 8
- 230000000737 periodic effect Effects 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 229910017115 AlSb Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 4
- 229910052785 arsenic Inorganic materials 0.000 claims description 3
- 230000001681 protective effect Effects 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 230000002745 absorbent Effects 0.000 claims description 2
- 239000002250 absorbent Substances 0.000 claims description 2
- 229910052787 antimony Inorganic materials 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 2
- 230000001678 irradiating effect Effects 0.000 claims 2
- 241001101998 Galium Species 0.000 claims 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims 1
- 229910052793 cadmium Inorganic materials 0.000 claims 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims 1
- 239000005350 fused silica glass Substances 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 1
- 238000012986 modification Methods 0.000 claims 1
- 230000004048 modification Effects 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 239000011574 phosphorus Substances 0.000 claims 1
- 229910052717 sulfur Inorganic materials 0.000 claims 1
- 239000011593 sulfur Substances 0.000 claims 1
- 239000000463 material Substances 0.000 description 10
- 238000000151 deposition Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 230000010349 pulsation Effects 0.000 description 5
- 239000002131 composite material Substances 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000002238 attenuated effect Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 238000005469 granulation Methods 0.000 description 1
- 230000003179 granulation Effects 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000005499 laser crystallization Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000010979 ruby Substances 0.000 description 1
- 229910001750 ruby Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B1/00—Single-crystal growth directly from the solid state
- C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
- C30B1/06—Recrystallisation under a temperature gradient
- C30B1/08—Zone recrystallisation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B1/00—Single-crystal growth directly from the solid state
- C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
- C30B1/023—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing from solids with amorphous structure
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Inorganic Chemistry (AREA)
- Recrystallisation Techniques (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| LU82690A LU82690A1 (fr) | 1980-08-05 | 1980-08-05 | Procede de preparation de films polycristallins semiconducteurs composes ou elementaires et films ainsi obtenus |
| DE8181200854T DE3166961D1 (en) | 1980-08-05 | 1981-07-29 | Process for the manufacture of polycrystalline films of semiconductors formed by compounds or elements, and films thus obtained |
| AT81200854T ATE10118T1 (de) | 1980-08-05 | 1981-07-29 | Verfahren zur herstellung polykristalliner filme aus halbleitern, die aus einer verbindung oder einem element bestehen, und dabei erhaltene filme. |
| EP81200854A EP0045551B1 (fr) | 1980-08-05 | 1981-07-29 | Procédé de préparation de films polycristallins semi-conducteurs composés ou élémentaires et films ainsi obtenus |
| US06/289,695 US4463028A (en) | 1980-08-05 | 1981-08-03 | Method for preparing composite or elementary semi-conducting polycrystalline films |
| BR8205017A BR8105017A (pt) | 1980-08-05 | 1981-08-04 | Processo de preparacao de peliculas poli-cristalinas semi condutoras compostas de dois elementos |
| JP56122885A JPS57118628A (en) | 1980-08-05 | 1981-08-05 | Method of producing polycrystalline semiconductor thin film |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| LU82690A LU82690A1 (fr) | 1980-08-05 | 1980-08-05 | Procede de preparation de films polycristallins semiconducteurs composes ou elementaires et films ainsi obtenus |
| LU82690 | 1980-08-05 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| LU82690A1 true LU82690A1 (fr) | 1982-05-10 |
Family
ID=19729461
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| LU82690A LU82690A1 (fr) | 1980-08-05 | 1980-08-05 | Procede de preparation de films polycristallins semiconducteurs composes ou elementaires et films ainsi obtenus |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPS57118628A (enrdf_load_stackoverflow) |
| LU (1) | LU82690A1 (enrdf_load_stackoverflow) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB8324531D0 (en) * | 1983-09-13 | 1983-10-12 | Secr Defence | Cadmium mercury telluride |
| JPS61231771A (ja) * | 1985-04-05 | 1986-10-16 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| JPS61237476A (ja) * | 1985-04-12 | 1986-10-22 | シーメンス・ソラー・インダストリエス・リミテッド・パートナーシップ | 化合物半導体の製造方法 |
| JP2546538B2 (ja) * | 1994-07-11 | 1996-10-23 | ソニー株式会社 | 薄膜トランジスタの製法 |
| FR3047365B1 (fr) * | 2016-02-03 | 2018-01-26 | Renault S.A.S | Dispositif de refroidissement pour une machine electrique. |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52143755A (en) * | 1976-05-26 | 1977-11-30 | Hitachi Ltd | Laser, zone melting device |
-
1980
- 1980-08-05 LU LU82690A patent/LU82690A1/fr unknown
-
1981
- 1981-08-05 JP JP56122885A patent/JPS57118628A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0343770B2 (enrdf_load_stackoverflow) | 1991-07-03 |
| JPS57118628A (en) | 1982-07-23 |
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