JPS57118628A - Method of producing polycrystalline semiconductor thin film - Google Patents

Method of producing polycrystalline semiconductor thin film

Info

Publication number
JPS57118628A
JPS57118628A JP56122885A JP12288581A JPS57118628A JP S57118628 A JPS57118628 A JP S57118628A JP 56122885 A JP56122885 A JP 56122885A JP 12288581 A JP12288581 A JP 12288581A JP S57118628 A JPS57118628 A JP S57118628A
Authority
JP
Japan
Prior art keywords
thin film
semiconductor thin
polycrystalline semiconductor
producing polycrystalline
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56122885A
Other languages
Japanese (ja)
Other versions
JPH0343770B2 (en
Inventor
Jiego Roodo Rushian
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BERUGIIKOKU
Original Assignee
BERUGIIKOKU
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BERUGIIKOKU filed Critical BERUGIIKOKU
Publication of JPS57118628A publication Critical patent/JPS57118628A/en
Publication of JPH0343770B2 publication Critical patent/JPH0343770B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C30B1/06—Recrystallisation under a temperature gradient
    • C30B1/08—Zone recrystallisation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C30B1/023—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing from solids with amorphous structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Photovoltaic Devices (AREA)
JP56122885A 1980-08-05 1981-08-05 Method of producing polycrystalline semiconductor thin film Granted JPS57118628A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
LU82690A LU82690A1 (en) 1980-08-05 1980-08-05 PROCESS FOR THE PREPARATION OF COMPOUND OR ELEMENTARY SEMICONDUCTOR POLYCRYSTALLINE FILMS AND FILMS OBTAINED THEREBY

Publications (2)

Publication Number Publication Date
JPS57118628A true JPS57118628A (en) 1982-07-23
JPH0343770B2 JPH0343770B2 (en) 1991-07-03

Family

ID=19729461

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56122885A Granted JPS57118628A (en) 1980-08-05 1981-08-05 Method of producing polycrystalline semiconductor thin film

Country Status (2)

Country Link
JP (1) JPS57118628A (en)
LU (1) LU82690A1 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6077431A (en) * 1983-09-13 1985-05-02 イギリス国 Method of producing cadmium mercury telluride
JPS61231771A (en) * 1985-04-05 1986-10-16 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
JPS61237476A (en) * 1985-04-12 1986-10-22 シーメンス・ソラー・インダストリエス・リミテッド・パートナーシップ Manufacture of compound semiconductor
JPH07147259A (en) * 1994-07-11 1995-06-06 Sony Corp Manufacture of thin film transistor
CN108432099A (en) * 2016-02-03 2018-08-21 雷诺股份公司 Cooling equipment for electrically powered machine

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52143755A (en) * 1976-05-26 1977-11-30 Hitachi Ltd Laser, zone melting device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52143755A (en) * 1976-05-26 1977-11-30 Hitachi Ltd Laser, zone melting device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6077431A (en) * 1983-09-13 1985-05-02 イギリス国 Method of producing cadmium mercury telluride
JPS61231771A (en) * 1985-04-05 1986-10-16 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
JPS61237476A (en) * 1985-04-12 1986-10-22 シーメンス・ソラー・インダストリエス・リミテッド・パートナーシップ Manufacture of compound semiconductor
JPH07147259A (en) * 1994-07-11 1995-06-06 Sony Corp Manufacture of thin film transistor
CN108432099A (en) * 2016-02-03 2018-08-21 雷诺股份公司 Cooling equipment for electrically powered machine

Also Published As

Publication number Publication date
LU82690A1 (en) 1982-05-10
JPH0343770B2 (en) 1991-07-03

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