LU102344B1 - A semiconductor having increased dopant concentration, a method of manufacturing thereof and a chemical reactor - Google Patents

A semiconductor having increased dopant concentration, a method of manufacturing thereof and a chemical reactor Download PDF

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Publication number
LU102344B1
LU102344B1 LU102344A LU102344A LU102344B1 LU 102344 B1 LU102344 B1 LU 102344B1 LU 102344 A LU102344 A LU 102344A LU 102344 A LU102344 A LU 102344A LU 102344 B1 LU102344 B1 LU 102344B1
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LU
Luxembourg
Prior art keywords
gas
semiconductor
reactor
dopant
injecting
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LU102344A
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English (en)
Inventor
Miroslav Lamac
Nicolas Lambert
Marina Davydova
Vincent Mortet
Andrew Taylor
Original Assignee
Fyzikalni Ustav Av Cr V V I
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Priority to LU102344A priority Critical patent/LU102344B1/en
Priority to PCT/CZ2021/050154 priority patent/WO2022135627A1/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/271—Diamond only using hot filaments
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/278—Diamond only doping or introduction of a secondary phase in the diamond
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3406—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)

Claims (13)

CITT ref.: F20002 Patentanspriiche LUWOQ3848
1. Verfahren zur Herstellung eines extrinsischen Halbleiters durch chemische Gasphasenabscheidung, wobei ein Substrat einem Halbleitervorläufer und einem Dotierelement ausgesetzt wird, wobei das Verfahren dadurch gekennzeichnet ist, dass es ferner umfasst: Einspritzen von Wasserstoffgas in eine Reaktorkammer bei konstantem Durchfluss; und Das Injizieren des Halbleitervorläufers ist ein Impulsinjektionsinjektion, und das Injizieren des Dotierstoffelements unter einer Konstantflussinjektion ist; oder Das Einspritzen von sowohl dem Dotierstoffelement als auch dem Halbleitervorläufer ist ein Impulsfluss, wobei sich der Impuls des Dotierstoffelements und des Halbleitervorläufers abwechselt.
2. Verfahren nach Anspruch 1, wobei der Halbleitervorläufer ausgewählt ist aus der Gruppe von: Methan, Ethan, Silan, Si 2 H 6, GeH 4.
3. Verfahren nach einem der vorhergehenden Ansprüche, wobei das Dotierstoffelement ausgewählt ist aus der Gruppe von: Akzeptoratome wie Bor, Aluminium, Gallium, Indium; oder Donoratome wie Phosphor, Arsen, Antimon, Wismut oder Lithium; oder Germanium, Silizium, Chrom, Nickel, Zinn, Kobalt, Schwefel, Gold und Platin.
4. Verfahren nach einem der vorhergehenden Ansprüche, wobei die Form der Impulsinjektion des Halbleitervorläufers eine Harmonische oder eine Sägezahnwellenform ist.
5. Verfahren nach einem der vorhergehenden Ansprüche, wobei der Gesamtgasstrom unter 2000 scem liegt, vorzugsweise zwischen 200 und 2000 sccm.
6. Verfahren nach einem der vorhergehenden Ansprüche, wobei die Dauer der Gasinjektion 1% - 50% des Zeitraums beträgt.
16/29
CITT ref.: F20002
7. Verfahren nach einem der vorhergehenden Ansprüche, der Zeitraum der Gasinjektion liegt-V08284$ unter 30 min, vorzugsweise zwischen 1 und 5 min.
8. Reaktor (1) zur Herstellung eines extrinsischen Halbleiters, wobei der Reaktor (1) umfasst: eine Vakuumkammer (2); einen Substrathalter (3) innerhalb der Vakuumkammer (2), der Substrathalter (3) kann eine Probe (4) aufnehmen, worin die Probe (4) ist konfiguriert, um Plasma (5) von einem chemischen Dampfabscheidungssystem aufzunehmen; mindestens ein Gasinjektionssystem (7), das Wasserstoffgas, einen Halbleitervorläufer und ein Dotierelement in die Vakuumkammer injizieren kann, wobei das Gasinjektionssystem (7) das Wasserstoffgas mit konstantem Durchfluss injizieren kann; und das Dotierstoffelement unter konstantem Fluss in den Reaktor (1) und den Halbleitervorlaufer unter gepulstem Fluss injizieren; oder Injizieren sowohl des Dotierstoffelements als auch des Halbleitervorläufers unter Pulsflussrate, wobei die Pulsinjektion des Dotierstoffelements und des Halbleitervorläufers abwechselnd ist; und wobei der Reaktor ferner umfasst: ein Pumpsystem (8), das die Gase aus der Reaktionskammer (2) evakuieren kann; und Gasaktivierungssystem (6) konfiguriert, um die durch das Gasinjektionssystem (7) eingebrachten Gase zu aktivieren, um reaktive Spezies für das dotierte Halbleiterwachstum zu bilden.
9. Rektor (1) nach Anspruch 8, wobei das Gasaktivierungssystem (6) ein Mikrowellenplasma- verstärkter chemischer Gasphasenabscheidungsreaktor ist.
10. Rektor (1) nach Anspruch 8, wobei das Gasaktivierungssystem (6) ein chemischer Dampfabscheidungsreaktor mit heißem Filament ist.
17/29
CITT ref.: F20002
11. Schicht aus phosphordotiertem Diamant, erhältlich durch das Verfahren nach einem derlUJ02384% Ansprüche 1 bis 6, wobei die Phosphordotiermittelkonzentration hôher als 220 Dotierelement / cm & supmin; 3 ist.
12. Verwendung der Schicht nach Anspruch 10 als Source oder Drain in einem Transistor oder einer Zwischenschicht zur Bildung eines ohmschen Kontakts in einer diamantbasierten Diode oder einem Transistor.
13. Elektrode, umfassend die Schicht nach Anspruch 11. 18/29
LU102344A 2020-12-21 2020-12-21 A semiconductor having increased dopant concentration, a method of manufacturing thereof and a chemical reactor LU102344B1 (en)

Priority Applications (2)

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LU102344A LU102344B1 (en) 2020-12-21 2020-12-21 A semiconductor having increased dopant concentration, a method of manufacturing thereof and a chemical reactor
PCT/CZ2021/050154 WO2022135627A1 (en) 2020-12-21 2021-12-20 A semiconductor having increased dopant concentration, a method of manufacturing thereof and a chemical reactor

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000000677A1 (en) 1998-06-26 2000-01-06 Extreme Devices, Inc. Method for doping semiconductor materials
US8017182B2 (en) 2007-06-21 2011-09-13 Asm International N.V. Method for depositing thin films by mixed pulsed CVD and ALD
US20170330746A1 (en) 2016-05-10 2017-11-16 Arizona Board Of Regents On Behalf Of Arizona State University Phosphorus incorporation for n-type doping of diamond with (100) and related surface orientation
WO2019042484A1 (en) 2017-08-29 2019-03-07 Fyzikalni Ustav Av Cr, V.V.I. PROCESS FOR PRODUCING A POROUS DIAMOND LAYER AND A THICK POROUS DIAMOND LAYER SUPPORTED BY NANOFIBERS

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000000677A1 (en) 1998-06-26 2000-01-06 Extreme Devices, Inc. Method for doping semiconductor materials
US8017182B2 (en) 2007-06-21 2011-09-13 Asm International N.V. Method for depositing thin films by mixed pulsed CVD and ALD
US20170330746A1 (en) 2016-05-10 2017-11-16 Arizona Board Of Regents On Behalf Of Arizona State University Phosphorus incorporation for n-type doping of diamond with (100) and related surface orientation
WO2019042484A1 (en) 2017-08-29 2019-03-07 Fyzikalni Ustav Av Cr, V.V.I. PROCESS FOR PRODUCING A POROUS DIAMOND LAYER AND A THICK POROUS DIAMOND LAYER SUPPORTED BY NANOFIBERS

Non-Patent Citations (10)

* Cited by examiner, † Cited by third party
Title
A. BOSSARDR. KAMGAF. RAULIN: "Quantitative gas chromatographic analysis of low-molecular-weight alkylphosphines in the presence of phosphine and hydrocarbons", JOURNAL OF CHROMATOGRAPHY A, vol. 330, January 1985 (1985-01-01), pages 400 - 402, XP026557055, DOI: 10.1016/S0021-9673(01)82003-3
A. R. BOSSARDR. KAMGAF. RAULIN: "Gas phase synthesis of organophosphorus compounds and the atmosphere of the giant planets", ICARUS, vol. 67, no. 2, August 1986 (1986-08-01), pages 305 - 324
F. A. KOECKS. CHOWDHURYR. J. NEMANICH, PHOSPHORUS INCORPORATION FOR N-TYPE DOPING OF DIAMOND WITH (100) AND RELATED SURFACE ORIENTATION
J. P. FERRISJ. Y. MORIMOTOR. BENSONA. BOSSARD: "Photochemistry of NH3, CH4 and PH3. Possible applications to the Jovian planets", ORIGINS OF LIFE, vol. 12, no. 3, September 1982 (1982-09-01), pages 261 - 265
KATO H ET AL: "Characterization of specific contact resistance on heavily phosphorus-doped diamond films", DIAMOND AND RELATED MATERIALS, ELSEVIER SCIENCE PUBLISHERS , AMSTERDAM, NL, vol. 18, no. 5-8, May 2009 (2009-05-01), pages 782 - 785, XP026155221, ISSN: 0925-9635, [retrieved on 20090213], DOI: 10.1016/J.DIAMOND.2009.01.033 *
KATO HIROMITSU ET AL: "Heavily phosphorus-doped nano-crystalline diamond electrode for thermionic emission application", DIAMOND AND RELATED MATERIALS, ELSEVIER SCIENCE PUBLISHERS , AMSTERDAM, NL, vol. 63, 11 August 2015 (2015-08-11), pages 165 - 168, XP029431728, ISSN: 0925-9635, DOI: 10.1016/J.DIAMOND.2015.08.002 *
KOIZUMI SATOSHI ET AL: "Phosphorus-doped chemical vapor deposition of diamond", DIAMOND AND RELATED MATERIALS, ELSEVIER SCIENCE PUBLISHERS , AMSTERDAM, NL, vol. 9, no. 3, 15 June 2017 (2017-06-15), pages 935 - 940, XP085073130, ISSN: 0925-9635, DOI: 10.1016/S0925-9635(00)00217-X *
LESKELÄ M ET AL: "4.05 - Atomic Layer Deposition", January 2014, COMPREHENSIVE MATERIALS PROCESSING, ELSEVIER, NL, PAGE(S) 101 - 123, ISBN: 978-0-08-096604-5, XP009516575 *
M. A. LOBAEVD. B. RADISHEVA. M. GORBACHEVA. L. VIKHAREVM. N. DROZDOV: "Investigation of Microwave Plasma during Diamond Doping by Phosphorus Using Optical Emission Spectroscopy", PHYS. STATUS SOLIDI A, vol. 216, no. 21, November 2019 (2019-11-01), pages 1900234
MACKUS ADRIAAN J. M. ET AL: "Synthesis of Doped, Ternary, and Quaternary Materials by Atomic Layer Deposition: A Review", CHEMISTRY OF MATERIALS, vol. 31, no. 4, 26 February 2019 (2019-02-26), US, pages 1142 - 1183, XP055830203, ISSN: 0897-4756, DOI: 10.1021/acs.chemmater.8b02878 *

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