LT2891733T - Polikristalinio silikono vaflinės tekstūros suteikimo priedai ir jų panaudojimas - Google Patents

Polikristalinio silikono vaflinės tekstūros suteikimo priedai ir jų panaudojimas

Info

Publication number
LT2891733T
LT2891733T LTEP13893094.6T LT13893094T LT2891733T LT 2891733 T LT2891733 T LT 2891733T LT 13893094 T LT13893094 T LT 13893094T LT 2891733 T LT2891733 T LT 2891733T
Authority
LT
Lithuania
Prior art keywords
silicon wafer
polycrystalline silicon
texturizing additive
texturizing
additive
Prior art date
Application number
LTEP13893094.6T
Other languages
English (en)
Inventor
Liming Fu
Yuanyuan Zhang
Original Assignee
Changzhou Shichuang Energy Technology Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Changzhou Shichuang Energy Technology Co., Ltd. filed Critical Changzhou Shichuang Energy Technology Co., Ltd.
Publication of LT2891733T publication Critical patent/LT2891733T/lt

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
LTEP13893094.6T 2013-09-04 2013-12-17 Polikristalinio silikono vaflinės tekstūros suteikimo priedai ir jų panaudojimas LT2891733T (lt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201310394703.2A CN103409808B (zh) 2013-09-04 2013-09-04 多晶硅片制绒添加剂及其使用方法
PCT/CN2013/089693 WO2015032154A1 (zh) 2013-09-04 2013-12-17 多晶硅片制绒添加剂及其使用方法

Publications (1)

Publication Number Publication Date
LT2891733T true LT2891733T (lt) 2016-10-10

Family

ID=49602845

Family Applications (1)

Application Number Title Priority Date Filing Date
LTEP13893094.6T LT2891733T (lt) 2013-09-04 2013-12-17 Polikristalinio silikono vaflinės tekstūros suteikimo priedai ir jų panaudojimas

Country Status (11)

Country Link
US (1) US9935233B2 (lt)
EP (1) EP2891733B1 (lt)
JP (1) JP2016531835A (lt)
KR (1) KR101687767B1 (lt)
CN (1) CN103409808B (lt)
ES (1) ES2591133T3 (lt)
LT (1) LT2891733T (lt)
MY (1) MY170621A (lt)
SG (1) SG11201405972TA (lt)
TW (1) TWI526522B (lt)
WO (1) WO2015032154A1 (lt)

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CN103409808B (zh) * 2013-09-04 2015-10-21 常州时创能源科技有限公司 多晶硅片制绒添加剂及其使用方法
CN103668467B (zh) * 2013-12-20 2016-08-31 常州时创能源科技有限公司 一种多晶硅片制绒添加剂及其应用
CN103696021A (zh) * 2013-12-23 2014-04-02 泰通(泰州)工业有限公司 一种和多晶制绒添加剂匹配的制绒后表面处理工艺
CN104241449A (zh) * 2014-09-18 2014-12-24 百力达太阳能股份有限公司 一种多晶硅太阳能电池制造工艺
CN104294369A (zh) * 2014-11-13 2015-01-21 苏州润阳光伏科技有限公司 一种用于多晶硅片酸制绒的添加剂及使用方法
CN104328504A (zh) * 2014-11-13 2015-02-04 苏州润阳光伏科技有限公司 一种多晶制绒辅助剂及应用方法
CN104651949B (zh) * 2015-02-11 2017-09-29 常州君合科技股份有限公司 一种多晶硅片制绒添加剂
CN105040108B (zh) * 2015-08-21 2017-11-17 浙江启鑫新能源科技股份有限公司 多晶硅太阳能电池的制绒方法
CN105304734A (zh) * 2015-11-03 2016-02-03 苏州旭环光伏科技有限公司 一种多晶硅片制绒辅助剂及其应用方法
CN108630786A (zh) 2016-06-27 2018-10-09 苏州阿特斯阳光电力科技有限公司 一种晶体硅太阳能电池绒面结构的制备方法
CN106119976B (zh) * 2016-08-19 2018-08-14 常州时创能源科技有限公司 多晶黑硅制绒用扩孔酸液的添加剂及其应用
CN107177890A (zh) * 2017-06-12 2017-09-19 通威太阳能（合肥）有限公司 一种金刚线切割多晶硅片的制绒方法以及电池片制备工艺
CN107245761B (zh) * 2017-08-10 2020-01-14 常州时创能源科技有限公司 金刚线多晶硅片制绒辅助剂及其应用
CN109427930B (zh) * 2017-09-04 2022-02-25 苏州易益新能源科技有限公司 一种在晶体硅片表面选择性制备绒面的方法
TWI636156B (zh) * 2017-09-08 2018-09-21 常州時創能源科技有限公司 金剛線多晶矽片制絨輔助劑、制絨液及制絨方法
CN108004597A (zh) * 2017-11-09 2018-05-08 润峰电力有限公司 一种多晶硅制绒添加剂及其制绒方法
CN108250363B (zh) * 2018-01-19 2020-04-10 温岭汉德高分子科技有限公司 一种单晶硅制绒添加剂
CN109537058B (zh) * 2018-09-30 2021-01-05 江苏顺风新能源科技有限公司 湿法黑硅制备工艺
CN109680337A (zh) * 2018-12-25 2019-04-26 浙江晶科能源有限公司 一种金刚线切割多晶硅的制绒方法
CN110137079B (zh) * 2019-05-22 2021-08-13 苏州晶瑞化学股份有限公司 金刚线切割多晶硅片制绒调控剂及含该调控剂的制绒剂
CN113817472B (zh) * 2021-11-23 2022-02-11 绍兴拓邦电子科技有限公司 一种太阳能电池硅片的制绒工艺
CN114420774A (zh) * 2021-11-29 2022-04-29 江苏科来材料科技有限公司 一种晶硅电池的制绒工艺
CN116004233A (zh) * 2022-12-12 2023-04-25 嘉兴市小辰光伏科技有限公司 一种提升硅片绒面均整度的刻蚀添加剂及使用方法

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CN103205815A (zh) * 2013-05-03 2013-07-17 上海交通大学 太阳能单晶硅片制绒液及其应用方法
CN103258918A (zh) * 2013-05-31 2013-08-21 英利集团有限公司 硅片的制绒方法、太阳能电池片及其制作方法
CN103409808B (zh) * 2013-09-04 2015-10-21 常州时创能源科技有限公司 多晶硅片制绒添加剂及其使用方法

Also Published As

Publication number Publication date
ES2591133T3 (es) 2016-11-25
KR101687767B1 (ko) 2016-12-19
EP2891733A4 (en) 2015-09-09
TWI526522B (zh) 2016-03-21
JP2016531835A (ja) 2016-10-13
WO2015032154A1 (zh) 2015-03-12
SG11201405972TA (en) 2015-04-29
CN103409808B (zh) 2015-10-21
US20160247957A1 (en) 2016-08-25
KR20150039128A (ko) 2015-04-09
CN103409808A (zh) 2013-11-27
MY170621A (en) 2019-08-21
EP2891733A1 (en) 2015-07-08
TW201416418A (zh) 2014-05-01
EP2891733B1 (en) 2016-07-13
US9935233B2 (en) 2018-04-03

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