KR980007522A - 고체촬상장치 - Google Patents

고체촬상장치 Download PDF

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Publication number
KR980007522A
KR980007522A KR1019970024076A KR19970024076A KR980007522A KR 980007522 A KR980007522 A KR 980007522A KR 1019970024076 A KR1019970024076 A KR 1019970024076A KR 19970024076 A KR19970024076 A KR 19970024076A KR 980007522 A KR980007522 A KR 980007522A
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KR
South Korea
Prior art keywords
photoelectric conversion
imaging device
state imaging
output
solid
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KR1019970024076A
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English (en)
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KR100304159B1 (ko
Inventor
케이조 미야자키
시게토시 스가와
Original Assignee
미타라이 하지메
캐논 가부시기가이샤
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Publication of KR980007522A publication Critical patent/KR980007522A/ko
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Publication of KR100304159B1 publication Critical patent/KR100304159B1/ko

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/63—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/40—Circuit details for pick-up tubes
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/63—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current
    • H04N25/633—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current by using optical black pixels
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Facsimile Heads (AREA)
  • Facsimile Scanning Arrangements (AREA)
  • Facsimile Image Signal Circuits (AREA)

Abstract

고체촬상장치에 있어서 OB화소에 의해서 농도불균일 및 고정패턴노이즈를 제거한 기준출력을 얻기 위하여, 동일 반도체기판상에 형성된 복수의 광전변환수단으로부터 출력되는 화소신호를, 상기 광전변환소자에 대응해서, 축적하는 복수의 축적수단을 지니고, 상기 광전변환소자중, 적어도 2개가 차광되어 있는 고체촬상장치에 있어서, 상기 차광된 광전변화소자로부터의 화소신호출력을, 상기 축적수단상에서 평균화처리하는 것을 특징으로 한다. 또, 상기 고체촬상장치에 있어서, 상기 축적수단은 용량으로 형성되고, 이들 용량을 전기적으로 일시 접속함으로써 평균화 처리를 행하는 것을 특징으로 한다.

Description

고체촬상장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 제 1실시예에 의한 OB화소출력의 평균화법을 설명하는 회로도.
제2a도, 제2b도 및 제2c도는 각각 OB화소출력을 기준출력으로서 이용하는 방법을 설명하는 회로도 및 차트.
제3도는 본 발명의 제 2실시예에 의한 OB화소출력의 평균화법을 설명하는 회로도.
제4도는 본 발명의 제 3실시예에 의한 OB화소출력의 평균화법을 설명하는 회로도.
제5도는 본 발명의 제 4실시예에 의한 OB화소출력의 평균화법을 설명하는 회로도.

Claims (4)

  1. 동일 반도체기판상에 형성된 복수의 광전변화수단으로부터 출력되는 화소신호를, 상기 광전변환소자에 대응해서, 각각 축적하는 복수의 축적수단을 지니고, 상기 광전변화소자중 적어도 2개가 차광되어 있는 고체촬상장치에 있어서, 상기 차광된 광전변환소자로부터의 화소신호출력을, 상기 출력수단상에서 평균화처리하는 것을 특징으로 하는 고체촬상장치.
  2. 제 1항에 있어서, 상기 축적수단은 용량이며, 이들 용량을 서로 전기적으로 일시 접속함으로써 평균화처리를 행하는 것을 특징으로 하는 고체촬상장치.
  3. 제 1항에 있어서, 상기 축적수단은 상기 광전변환소자로부터의 노이즈성분과 신호성분을 각각 축적하기 위한 용량을 지니고, 상기 용량의 화소신호를 평균화처리해서 노이즈성분 및 신호성분용의 출력신호를 차동출력함으로써 기준출력을 얻는 것을 특징으로 하는 고체촬상장치.
  4. 제 1항 내지 제 3항중 어느 한 항에 있어서, 상기 평균화처리는, 상기 차광된 광전변환소자에 대응하는 상기 축적수단에 상기 화소신호를 축적한 후, 상기 각 축적수단의 화소신호를 반도체 스위치수단에 의해 공통적으로 출력하는 것을 특징으로 하는 고체촬상장치.
KR1019970024076A 1996-06-11 1997-06-11 고체촬상장치 KR100304159B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP08149141A JP3142239B2 (ja) 1996-06-11 1996-06-11 固体撮像装置
JP96-149141 1996-06-11

Publications (2)

Publication Number Publication Date
KR980007522A true KR980007522A (ko) 1998-03-30
KR100304159B1 KR100304159B1 (ko) 2001-11-22

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Country Status (9)

Country Link
US (1) US6130712A (ko)
EP (1) EP0813339B1 (ko)
JP (1) JP3142239B2 (ko)
KR (1) KR100304159B1 (ko)
CN (1) CN1096787C (ko)
DE (1) DE69720598T2 (ko)
ES (1) ES2192249T3 (ko)
HK (1) HK1005120A1 (ko)
TW (1) TW340979B (ko)

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Also Published As

Publication number Publication date
KR100304159B1 (ko) 2001-11-22
CN1096787C (zh) 2002-12-18
DE69720598T2 (de) 2004-01-29
JP3142239B2 (ja) 2001-03-07
EP0813339B1 (en) 2003-04-09
HK1005120A1 (en) 1998-12-24
DE69720598D1 (de) 2003-05-15
CN1168044A (zh) 1997-12-17
US6130712A (en) 2000-10-10
EP0813339A2 (en) 1997-12-17
ES2192249T3 (es) 2003-10-01
EP0813339A3 (en) 1998-10-14
JPH09331420A (ja) 1997-12-22
TW340979B (en) 1998-09-21

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