KR980005736A - Method of Cleaning Semiconductor Devices - Google Patents

Method of Cleaning Semiconductor Devices Download PDF

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Publication number
KR980005736A
KR980005736A KR1019960023905A KR19960023905A KR980005736A KR 980005736 A KR980005736 A KR 980005736A KR 1019960023905 A KR1019960023905 A KR 1019960023905A KR 19960023905 A KR19960023905 A KR 19960023905A KR 980005736 A KR980005736 A KR 980005736A
Authority
KR
South Korea
Prior art keywords
contact hole
hbf
diffusion
oxide film
semiconductor devices
Prior art date
Application number
KR1019960023905A
Other languages
Korean (ko)
Inventor
정승필
송재인
박흥수
이문희
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019960023905A priority Critical patent/KR980005736A/en
Publication of KR980005736A publication Critical patent/KR980005736A/en

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Abstract

본 발명에 의한 반도체 소자의 세정 방법은 HBF4와 NH4F를 사용하여 산화막에 대한 낮은 식각율, 공정시간마진(Time Margine)의 충분한 확보, 공정의 안정화를 기하고, 콘택홀 형성시 발생하는 파티클, 자연산화막, 폴리머 등을 충분히 제거함으로써 콘택홀 측벽에 결함이 발생하는 것을 막을 수 있고, 상기 HBF4와 NH4F의 혼합액에 탈이온수나 유지용제의 양을 조절함으로써 확산 및 포토 공정전(Pre-Diffusion/Pre-Photo)의 세정에 사용할 수 있는 슬라이트 식각액(Slingt Etchant)으로의 역할을 할 수 있다는 잇점이 있다.The method for cleaning a semiconductor device according to the present invention uses HBF 4 and NH 4 F to lower the etching rate for the oxide film, to secure sufficient time margin, to stabilize the process, and to generate the contact hole. particles, by sufficiently remove the natural oxide film, polymer and the like can be prevented that a defect occurs in the contact hole side wall, by adjusting the amount of deionized water and maintaining a solvent to the mixed liquid of the HBF 4 and NH 4 F diffusion and photolithography in ( The advantage is that it can serve as a slitting etchant that can be used to clean pre-diffusion / pre-photo.

Description

반도체소자의 세정방법Method of Cleaning Semiconductor Devices

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

Claims (2)

반도체 기판상에 여러층으로 이루어진 산화막들의 일부분을 식각하여 콘택홀을 형성하는 단계; 및 상기 콘택홀이 형성된 반도체 기판을 HBF4와 NH4F를 석어 만든 혼합액을 사용하여 세정하는 것을 특징으로 하는 반도체 소자의 세정(Cleaning) 방법.Etching a portion of the oxide layers having a plurality of layers on the semiconductor substrate to form a contact hole; And cleaning the semiconductor substrate on which the contact hole is formed by using a mixed solution obtained by distilling HBF 4 and NH 4 F. 제1항에 있어서, 상기 혼합액에 DIW(탈이온수), 유기용제(Organic Solvent)중 어느 하나를 혼합하여 사용하는 것을 특징으로 하는 반도체 소자의 세정방법.The method of claim 1, wherein any one of DIW (deionized water) and an organic solvent is mixed and used in the mixed solution. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019960023905A 1996-06-25 1996-06-25 Method of Cleaning Semiconductor Devices KR980005736A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019960023905A KR980005736A (en) 1996-06-25 1996-06-25 Method of Cleaning Semiconductor Devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960023905A KR980005736A (en) 1996-06-25 1996-06-25 Method of Cleaning Semiconductor Devices

Publications (1)

Publication Number Publication Date
KR980005736A true KR980005736A (en) 1998-03-30

Family

ID=66287659

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960023905A KR980005736A (en) 1996-06-25 1996-06-25 Method of Cleaning Semiconductor Devices

Country Status (1)

Country Link
KR (1) KR980005736A (en)

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