KR980005601A - Contact Forming Method of Semiconductor Device - Google Patents
Contact Forming Method of Semiconductor Device Download PDFInfo
- Publication number
- KR980005601A KR980005601A KR1019960025412A KR19960025412A KR980005601A KR 980005601 A KR980005601 A KR 980005601A KR 1019960025412 A KR1019960025412 A KR 1019960025412A KR 19960025412 A KR19960025412 A KR 19960025412A KR 980005601 A KR980005601 A KR 980005601A
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor device
- forming method
- contact forming
- contact
- semiconductor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76831—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers in via holes or trenches, e.g. non-conductive sidewall liners
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019960025412A KR100399934B1 (en) | 1996-06-28 | 1996-06-28 | Method for forming contact of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019960025412A KR100399934B1 (en) | 1996-06-28 | 1996-06-28 | Method for forming contact of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR980005601A true KR980005601A (en) | 1998-03-30 |
| KR100399934B1 KR100399934B1 (en) | 2003-12-24 |
Family
ID=37422293
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019960025412A KR100399934B1 (en) | 1996-06-28 | 1996-06-28 | Method for forming contact of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR100399934B1 (en) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR960008551B1 (en) * | 1992-12-31 | 1996-06-28 | Hyundai Electronics Ind | Contact manufacturing method of semiconductor device |
-
1996
- 1996-06-28 KR KR1019960025412A patent/KR100399934B1/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR100399934B1 (en) | 2003-12-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20100825 Year of fee payment: 8 |
|
| LAPS | Lapse due to unpaid annual fee |