KR980005462A - Contact hole formation method of semiconductor device - Google Patents

Contact hole formation method of semiconductor device Download PDF

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Publication number
KR980005462A
KR980005462A KR1019960022825A KR19960022825A KR980005462A KR 980005462 A KR980005462 A KR 980005462A KR 1019960022825 A KR1019960022825 A KR 1019960022825A KR 19960022825 A KR19960022825 A KR 19960022825A KR 980005462 A KR980005462 A KR 980005462A
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KR
South Korea
Prior art keywords
contact hole
forming
insulating film
semiconductor device
interlayer insulating
Prior art date
Application number
KR1019960022825A
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Korean (ko)
Inventor
안현수
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019960022825A priority Critical patent/KR980005462A/en
Publication of KR980005462A publication Critical patent/KR980005462A/en

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Abstract

본 발며은 반도체 소자의 콘택홀 형성방법을 제공하는 것으로, 콘택홀 형성시 습식식각을 사용하지 않고 건식식각 방법으로 콘택홀 상부에 현재의 콘탤홀 보다 더 큰 지름을 갖는 콘택홀을 형성하여 콘택홀이 계단형태를 갖도록 하므로써 습식식각에 의해 발생되는 파티클을 억제하며 소자의 특성을 향상시킬 수 있는 효과가 있다.The present invention provides a method for forming a contact hole in a semiconductor device, and forms a contact hole having a larger diameter than the current contact hole on the contact hole by dry etching without using wet etching when forming the contact hole. By having this step shape, it is possible to suppress particles generated by wet etching and to improve device characteristics.

Description

반도체 소자의 콘택홀 형성방법Contact hole formation method of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

도2a 내지 제2d도는 본 발명에 따른 반도체 소자의 콘택홀 형성방법을 설명하기 위한 소자의 단면도.2A to 2D are cross-sectional views of a device for explaining a method for forming a contact hole in a semiconductor device according to the present invention.

Claims (2)

반도체 소자의 콘택홀 형성방법에 잇어서, 실리콘기판상에 절연막을 형성한 후 절연막상에 패턴화된 금속층을 형성하는 단계와, 상기 단계로부터 상기 금속층 및 절연막상에 제1금속층간 절연막, SOG막 및 제2금속층간 절연막을 순차적으로 형성하는 단계와, 상기 단계로부터 상기 금속층이 노출되도록 제2금속층간 절연막, SOG막 및 제1금속층간 절연막을 건식식각 방법으로 식각하여 기본 콘택홀을 형성하는 단계와, 상기 단계로부터 제2금속층간 절연막을 건식식각 방법으로 기본 콘택홀상에 기본 콘택홀의 지름보다 크게 식각하여 큰 콘택홀을 형성하는 단계로 이루어지는 것을 특징으로 하는 반도체 소자의 콘택홀 형성방법.A method for forming a contact hole in a semiconductor device, comprising: forming an insulating film on a silicon substrate and then forming a patterned metal layer on the insulating film; and from the step, a first interlayer insulating film, an SOG film, Sequentially forming a second interlayer insulating film, and etching a second interlayer insulating film, an SOG film, and a first interlayer insulating film by dry etching to expose the metal layer from the step; And forming a large contact hole by etching the second interlayer insulating film from the above step by using a dry etching method over the base contact hole to form a larger contact hole. 제1항에 있어서, 상기 큰 콘택홀의 지름은 기본 콘택홀의 지름에 대하여 1.5 내지 2.5배이며, 깊이는 기본 콘택홀의 전체 깊이에 대하여 1/4 내지 1/2로 형성되는 것을 특징으로 하는 반도체 소자의 콘택홀 형성방법.The semiconductor device of claim 1, wherein the diameter of the large contact hole is 1.5 to 2.5 times the diameter of the basic contact hole, and the depth is 1/4 to 1/2 of the total depth of the basic contact hole. Contact hole forming method. ※참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: It is to be disclosed based on the initial application.
KR1019960022825A 1996-06-21 1996-06-21 Contact hole formation method of semiconductor device KR980005462A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019960022825A KR980005462A (en) 1996-06-21 1996-06-21 Contact hole formation method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960022825A KR980005462A (en) 1996-06-21 1996-06-21 Contact hole formation method of semiconductor device

Publications (1)

Publication Number Publication Date
KR980005462A true KR980005462A (en) 1998-03-30

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ID=66287533

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960022825A KR980005462A (en) 1996-06-21 1996-06-21 Contact hole formation method of semiconductor device

Country Status (1)

Country Link
KR (1) KR980005462A (en)

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