KR980005462A - Contact hole formation method of semiconductor device - Google Patents
Contact hole formation method of semiconductor device Download PDFInfo
- Publication number
- KR980005462A KR980005462A KR1019960022825A KR19960022825A KR980005462A KR 980005462 A KR980005462 A KR 980005462A KR 1019960022825 A KR1019960022825 A KR 1019960022825A KR 19960022825 A KR19960022825 A KR 19960022825A KR 980005462 A KR980005462 A KR 980005462A
- Authority
- KR
- South Korea
- Prior art keywords
- contact hole
- forming
- insulating film
- semiconductor device
- interlayer insulating
- Prior art date
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
본 발며은 반도체 소자의 콘택홀 형성방법을 제공하는 것으로, 콘택홀 형성시 습식식각을 사용하지 않고 건식식각 방법으로 콘택홀 상부에 현재의 콘탤홀 보다 더 큰 지름을 갖는 콘택홀을 형성하여 콘택홀이 계단형태를 갖도록 하므로써 습식식각에 의해 발생되는 파티클을 억제하며 소자의 특성을 향상시킬 수 있는 효과가 있다.The present invention provides a method for forming a contact hole in a semiconductor device, and forms a contact hole having a larger diameter than the current contact hole on the contact hole by dry etching without using wet etching when forming the contact hole. By having this step shape, it is possible to suppress particles generated by wet etching and to improve device characteristics.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.
도2a 내지 제2d도는 본 발명에 따른 반도체 소자의 콘택홀 형성방법을 설명하기 위한 소자의 단면도.2A to 2D are cross-sectional views of a device for explaining a method for forming a contact hole in a semiconductor device according to the present invention.
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960022825A KR980005462A (en) | 1996-06-21 | 1996-06-21 | Contact hole formation method of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960022825A KR980005462A (en) | 1996-06-21 | 1996-06-21 | Contact hole formation method of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
KR980005462A true KR980005462A (en) | 1998-03-30 |
Family
ID=66287533
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019960022825A KR980005462A (en) | 1996-06-21 | 1996-06-21 | Contact hole formation method of semiconductor device |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR980005462A (en) |
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1996
- 1996-06-21 KR KR1019960022825A patent/KR980005462A/en not_active Application Discontinuation
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