KR980005261A - Method for manufacturing a field emission device having a silicide as an emitter and a gate - Google Patents

Method for manufacturing a field emission device having a silicide as an emitter and a gate Download PDF

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Publication number
KR980005261A
KR980005261A KR1019960025351A KR19960025351A KR980005261A KR 980005261 A KR980005261 A KR 980005261A KR 1019960025351 A KR1019960025351 A KR 1019960025351A KR 19960025351 A KR19960025351 A KR 19960025351A KR 980005261 A KR980005261 A KR 980005261A
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KR
South Korea
Prior art keywords
silicide
emission device
field emission
emitter
silicon substrate
Prior art date
Application number
KR1019960025351A
Other languages
Korean (ko)
Other versions
KR100246254B1 (en
Inventor
정호련
Original Assignee
엄길용
오리온전기 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 엄길용, 오리온전기 주식회사 filed Critical 엄길용
Priority to KR1019960025351A priority Critical patent/KR100246254B1/en
Publication of KR980005261A publication Critical patent/KR980005261A/en
Application granted granted Critical
Publication of KR100246254B1 publication Critical patent/KR100246254B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30446—Field emission cathodes characterised by the emitter material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2203/00—Electron or ion optical arrangements common to discharge tubes or lamps
    • H01J2203/02—Electron guns
    • H01J2203/0204—Electron guns using cold cathodes, e.g. field emission cathodes
    • H01J2203/0208—Control electrodes
    • H01J2203/0212—Gate electrodes
    • H01J2203/0232—Gate electrodes characterised by the material

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Cold Cathode And The Manufacture (AREA)

Abstract

본 발명은 실리사이드를 에미터와 게이터로 갖는 전계 방출 소자의 제조 방법에 관한 것으로, 실리콘 기판(11)을 일정 깊이로 에칭하는 단계와, 실리콘 기판(11)상에 산화막(12)을 형성한 후에 CVD에 의해 폴리실리콘(13)을 증착하는 단계와, 폴리실리콘(13)상에 얇게 포토레지스트(14)를 증착하고 포토레지스트(14)를 제거한 후에 산화막(12)을 습식 에칭하는 단계와, 금속을 증착한 후에 열처리하여 실리사이드를 형성하여 게이트(17)와 에미터(16)를 형성하는 단계를 구비한다. 그로 인해, 내구성이 우수하고 저전압에서도 전계 방출이 가능한 전계 방출 소자를 얻을 수 있다.The present invention relates to a method of manufacturing a field emission device having a silicide as an emitter and a gutter, comprising the steps of: etching a silicon substrate (11) to a predetermined depth; forming an oxide film (12) on the silicon substrate Depositing a polysilicon 13 by CVD; wet etching the oxide film 12 after depositing a thin photoresist 14 on the polysilicon 13 and removing the photoresist 14; And then forming a gate 17 and an emitter 16 by forming a silicide by heat treatment. Therefore, it is possible to obtain a field emission device which is excellent in durability and capable of emitting a field under a low voltage.

Description

실리사이드를 에미터와 게이트로 갖는 전계 방출 소자의 제조방법Method for manufacturing a field emission device having a silicide as an emitter and a gate

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.

제1a도 내지 제1f도는 본 발명에 의한 전계 방출 소자를 제조하는 방법을 나타내는 도면.Figs. 1a to 1f are diagrams showing a method of manufacturing a field emission device according to the present invention. Fig.

Claims (2)

실리콘 기판(11)을 일정 깊이로 에칭하는 단계와, 상기 실리콘 기판(11)상에 산화막(12)을 형성한 후에 CVD에 의해 폴리실리콘(13)을 증차가는 단계와 상기 폴리실리콘(13)상에 얇게 포토레지스트(14)를 증착하고 상기 포토레지스트(14)를 제거한 후에 상기 산화막(12)을 습식 에칭하는 단계와, 금속을 증착한 후에 열처리하여 실리사이드를 형성하여 게이트(17)와 에미터(16)을 형성하는 단계를 구비하는 것을 특징으로 하는 실리사이드를 에미터와 게이트로 갖는 전계방출 소자의 제조 방법.Etching the silicon substrate 11 to a predetermined depth; growing the polysilicon 13 by CVD after forming an oxide film 12 on the silicon substrate 11; Wet etching the oxide film 12 after depositing a thin photoresist 14 and removing the photoresist 14 and a heat treatment after depositing the metal to form a silicide to form the gate 17 and the emitter 16. A method for fabricating a field emission device, comprising: forming a silicide layer on a substrate; 제1항에 있어서, 상기 실리콘 기판(11)을 에칭하는 단계에서 CI가스를 이용하여 RIE에칭에 의해 에칭하는 것을 특징으로 하는 실리사이드를 에미터와 게이트로 갖는 전계 방출 소자의 제조 방법.The method of manufacturing a field emission device according to claim 1, wherein the silicon substrate (11) is etched by RIE etching using CI gas in the step of etching the silicon substrate (11). ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: It is disclosed by the contents of the first application.
KR1019960025351A 1996-06-28 1996-06-28 Manufacturing method of field emission device having silicide as emitter and gate KR100246254B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019960025351A KR100246254B1 (en) 1996-06-28 1996-06-28 Manufacturing method of field emission device having silicide as emitter and gate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960025351A KR100246254B1 (en) 1996-06-28 1996-06-28 Manufacturing method of field emission device having silicide as emitter and gate

Publications (2)

Publication Number Publication Date
KR980005261A true KR980005261A (en) 1998-03-30
KR100246254B1 KR100246254B1 (en) 2000-03-15

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960025351A KR100246254B1 (en) 1996-06-28 1996-06-28 Manufacturing method of field emission device having silicide as emitter and gate

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100284586B1 (en) * 1998-06-23 2001-05-02 정선종 Method for manufacturing gate electrode of field emission device with silicon tip

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100284586B1 (en) * 1998-06-23 2001-05-02 정선종 Method for manufacturing gate electrode of field emission device with silicon tip

Also Published As

Publication number Publication date
KR100246254B1 (en) 2000-03-15

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