KR980005071A - 유전층의 전기적 특성을 개질시키기 위한 후막 조성물 - Google Patents

유전층의 전기적 특성을 개질시키기 위한 후막 조성물 Download PDF

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Publication number
KR980005071A
KR980005071A KR1019970028108A KR19970028108A KR980005071A KR 980005071 A KR980005071 A KR 980005071A KR 1019970028108 A KR1019970028108 A KR 1019970028108A KR 19970028108 A KR19970028108 A KR 19970028108A KR 980005071 A KR980005071 A KR 980005071A
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South Korea
Prior art keywords
thick film
dielectric layers
electrical properties
film compositions
composition
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KR1019970028108A
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English (en)
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로리 포트빈 도르즈디크
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미리암 디. 메코너헤이
이.아이.듀폰 디 네모아 앤드 캄파니
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Application filed by 미리암 디. 메코너헤이, 이.아이.듀폰 디 네모아 앤드 캄파니 filed Critical 미리암 디. 메코너헤이
Publication of KR980005071A publication Critical patent/KR980005071A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/12—Ceramic dielectrics
    • H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/12—Ceramic dielectrics
    • H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
    • H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
    • H01G4/1227—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates based on alkaline earth titanates

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Inorganic Insulating Materials (AREA)
  • Ceramic Capacitors (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Formation Of Insulating Films (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

본 발명은 (1) BaTiO332-98 중량%, (2) 아연 바륨 보레이트 프리트 2-60 중량% 및 (3) Bi2O30-8중량%를 포함하는 축전기 유전체 후막 조성물에 관한 것이다.

Description

유전층의 전기적 특성을 개질시키기 위한 후막 조성물
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (6)

  1. (1) BaTiO332-98 중량%, (2) 아연 바륨 보레이트 프리트 2-60 중량% 및 (3) Bi2O3 0-8 중량%를 포함하는 축전기 유전체 후막 조성물.
  2. 제1항에 있어서, (1) BaTiO332-92 중량%, (2) 아연 바륨 보레이트 프리트 8-60 중량% 및 (3) Bi2O30-8 중량%를 포함하는 조성물.
  3. 제1항에 있어서, (1) BaTiO342-96 중량%, (2) 아연 바륨 보레이트 프리트 4-50 중량% 및 (3) Bi2O30-8 중량%를 포함하는 조성물.
  4. 제1항에 있어서, (1) BaTiO352-98 중량%, (2) 아연 바륨 보레이트 프리트 2-40 중량% 및 (3) Bi2O30-8 중량%를 포함하는 조성물.
  5. 제1항 내지 제4항 중 어느 한 항에 있어서, Bi2O3의 중량%가 약 0.5-5%인 조성물.
  6. 제1항 내지 제4항 중 어느 한 항에 있어서, 아연 바륨 보레이트 프리트가 2ZnO-BaO-B2O3인 조성물.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019970028108A 1996-06-28 1997-06-27 유전층의 전기적 특성을 개질시키기 위한 후막 조성물 KR980005071A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/671,868 1996-06-28
US08/671,868 US5780375A (en) 1993-10-19 1996-06-28 Thick film composition for modifying the electrical properties of a dielectric layer

Publications (1)

Publication Number Publication Date
KR980005071A true KR980005071A (ko) 1998-03-30

Family

ID=24696199

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019970028108A KR980005071A (ko) 1996-06-28 1997-06-27 유전층의 전기적 특성을 개질시키기 위한 후막 조성물

Country Status (7)

Country Link
US (1) US5780375A (ko)
EP (1) EP0817215B1 (ko)
JP (1) JPH10149947A (ko)
KR (1) KR980005071A (ko)
CN (1) CN1170946A (ko)
DE (1) DE69726056T2 (ko)
TW (1) TW343341B (ko)

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US6743534B2 (en) 2001-10-01 2004-06-01 Heraeus Incorporated Self-constrained low temperature glass-ceramic unfired tape for microelectronics and methods for making and using the same
US6517931B1 (en) * 2001-10-15 2003-02-11 Ferro Corporation Silver ink for forming electrodes
TWI223817B (en) * 2002-11-08 2004-11-11 Ind Tech Res Inst Dielectric material compositions with high dielectric constant and low dielectric loss
US7394071B2 (en) * 2004-12-20 2008-07-01 Electronics And Telecommunications Research Institute Micro column electron beam apparatus formed in low temperature co-fired ceramic substrate
DE102005061832A1 (de) * 2005-12-23 2007-06-28 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Hochdruckentladungslampe mit verbesserter Zündfähigkeit sowie Hochspannungspulsgenerator
JP5067541B2 (ja) 2007-03-30 2012-11-07 Ｔｄｋ株式会社 誘電体磁器組成物、複合電子部品および積層セラミックコンデンサ
US20090034156A1 (en) * 2007-07-30 2009-02-05 Takuya Yamamoto Composite sheet
JPWO2012128175A1 (ja) * 2011-03-18 2014-07-24 株式会社村田製作所 積層セラミックコンデンサ、誘電体セラミック、積層セラミック電子部品および積層セラミックコンデンサの製造方法
JP5668569B2 (ja) * 2011-03-28 2015-02-12 Tdk株式会社 誘電体磁器組成物および電子部品

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Also Published As

Publication number Publication date
TW343341B (en) 1998-10-21
CN1170946A (zh) 1998-01-21
EP0817215B1 (en) 2003-11-12
US5780375A (en) 1998-07-14
EP0817215A2 (en) 1998-01-07
EP0817215A3 (en) 1999-04-21
DE69726056T2 (de) 2004-08-26
DE69726056D1 (de) 2003-12-18
JPH10149947A (ja) 1998-06-02

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