KR970072169A - 플라즈마 식각 장치 - Google Patents

플라즈마 식각 장치 Download PDF

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Publication number
KR970072169A
KR970072169A KR1019960012814A KR19960012814A KR970072169A KR 970072169 A KR970072169 A KR 970072169A KR 1019960012814 A KR1019960012814 A KR 1019960012814A KR 19960012814 A KR19960012814 A KR 19960012814A KR 970072169 A KR970072169 A KR 970072169A
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KR
South Korea
Prior art keywords
chamber
plasma etching
etching apparatus
magnetic field
wafer
Prior art date
Application number
KR1019960012814A
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English (en)
Other versions
KR100205098B1 (ko
Inventor
권창헌
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019960012814A priority Critical patent/KR100205098B1/ko
Priority to GB9708271A priority patent/GB2312400B/en
Priority to JP09108438A priority patent/JP3105467B2/ja
Priority to US08/842,997 priority patent/US5895551A/en
Publication of KR970072169A publication Critical patent/KR970072169A/ko
Application granted granted Critical
Publication of KR100205098B1 publication Critical patent/KR100205098B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching
    • H01J2237/3348—Problems associated with etching control of ion bombardment energy

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

본 발명은 플라즈마 식각 장치에 관한 것으로, 식각 이온의 충돌로 인한 웨이퍼 표면의 손상을 방지하기 위하여 다수의 웨이퍼를 수직으로 장착하고, 식각 이온이 각 웨이퍼 방향으로 수평 이동하도록 각 웨이퍼의 전면에 자기장을 형성시키므로써 웨이퍼 표면의 손상 및 파티클에 의한 불량의 발생을 방지하고, 웨이퍼간의 식각 균일도를 향상시켜 소자의 수율이 향상될 수 있도록 한 플라즈마 식각 장치에 관한 것이다.

Description

플라즈마 식각 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명에 따른 플라즈마 식각 장치의 구조도.

Claims (4)

  1. 플라즈마 식각 장치에 있어서, 다수의 측벽, 저면 및 상부면을 갖는 챔버와, 상기 챔버 내부로 식각 가스를 공급하기 위해 상기 챔버의 상부면에 접속된 가스 주입구와, 상기 가스 주입구와 접속되며, 공급되는 식각 가스를 상기 챔버 내부에 균일하게 분산시키기 위한 분산판과, 상기 분산판에 고주파 전력을 공급하기 위한 고주파 발생기와, 상기 챔버 내부의 저면에 형성되며, 전기적으로 접지된 에노드 전극과, 상기 챔버의 각측벽과 인접된 내부에 웨이퍼를 수직으로 지지하기 위해 설치된 다수의 웨이퍼 지지대와, 상기 챔버 각 측벽의 상부 및 하부에 일측 종단부가 각각 접속된 가스 배기구와, 상기 가스 배기구의 다른 일측 종단부와 접속되며, 상기 챔버의 내부를 일정 압력으로 유지시키기 위한 진공 배기 펌프와, 상기 웨이퍼 지지대의 전면에 설치되며, 식각 이온을 상기 웨이퍼 방향으로 이동시키기 위한 자기장을 형성하는 자계 형성 수단으로 이루어지는 것을 특징으로 하는 플라즈마 식각 장치.
  2. 제1항에 있어서, 상기 챔버와 상기 가스 주입구는 절연체에 의해 전기적으로 분리되는 것을 특징으로 하는 플라즈마 식각 장치.
  3. 제1항에 있어서, 상기 자계 형성 수단은 상기 웨이퍼의 둘레를 감싸도록 원형으로 설치된 것을 특징으로 하는 플라즈마 식각 장치.
  4. 제1항 또는 제3항에 있어서, 상기 자계 형성 수단은 동축 자계 코일로 형성된 것을 특징으로 하는 플라즈마 식각 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960012814A 1996-04-25 1996-04-25 플라즈마 식각 장치 KR100205098B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1019960012814A KR100205098B1 (ko) 1996-04-25 1996-04-25 플라즈마 식각 장치
GB9708271A GB2312400B (en) 1996-04-25 1997-04-24 Plasma etching apparatus
JP09108438A JP3105467B2 (ja) 1996-04-25 1997-04-25 プラズマ蝕刻装置
US08/842,997 US5895551A (en) 1996-04-25 1997-04-25 Plasma etching apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960012814A KR100205098B1 (ko) 1996-04-25 1996-04-25 플라즈마 식각 장치

Publications (2)

Publication Number Publication Date
KR970072169A true KR970072169A (ko) 1997-11-07
KR100205098B1 KR100205098B1 (ko) 1999-06-15

Family

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Application Number Title Priority Date Filing Date
KR1019960012814A KR100205098B1 (ko) 1996-04-25 1996-04-25 플라즈마 식각 장치

Country Status (4)

Country Link
US (1) US5895551A (ko)
JP (1) JP3105467B2 (ko)
KR (1) KR100205098B1 (ko)
GB (1) GB2312400B (ko)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2799920B1 (fr) * 1999-10-19 2002-01-11 Metal Process Procede de production d'un plasma par decharges distribuees de type capacitif, et dispositif pour la mise en oeuvre d'un tel procede
US6854386B2 (en) * 2000-10-31 2005-02-15 International Imaging Materials Inc. Ceramic decal assembly
US6796733B2 (en) 2000-10-31 2004-09-28 International Imaging Materials Inc. Thermal transfer ribbon with frosting ink layer
DE10237249B4 (de) * 2002-08-14 2014-12-18 Excelitas Technologies Singapore Pte Ltd Verfahren zum selektiven Abtragen von Material aus der Oberfläche eines Substrats
US7917483B2 (en) * 2003-04-24 2011-03-29 Affini, Inc. Search engine and method with improved relevancy, scope, and timeliness
KR101787067B1 (ko) * 2010-12-29 2017-10-18 한국단자공업 주식회사 플러그커넥터, 소켓커넥터 및 그 결합구조
JP7086620B2 (ja) * 2018-01-31 2022-06-20 ヒロセ電機株式会社 コネクタおよびコネクタシステム

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Publication number Priority date Publication date Assignee Title
US3988232A (en) * 1974-06-25 1976-10-26 Matsushita Electric Industrial Co., Ltd. Method of making crystal films
GB1550853A (en) * 1975-10-06 1979-08-22 Hitachi Ltd Apparatus and process for plasma treatment
FR2490246A1 (fr) * 1980-09-17 1982-03-19 Cit Alcatel Dispositif de deposition chimique activee sous plasma
US5512102A (en) * 1985-10-14 1996-04-30 Semiconductor Energy Laboratory Co., Ltd. Microwave enhanced CVD system under magnetic field
US5225024A (en) * 1989-05-08 1993-07-06 Applied Materials, Inc. Magnetically enhanced plasma reactor system for semiconductor processing
JPH02298024A (ja) * 1989-05-12 1990-12-10 Tadahiro Omi リアクティブイオンエッチング装置
US5178681A (en) * 1991-01-29 1993-01-12 Applied Materials, Inc. Suspension system for semiconductor reactors
JP3362432B2 (ja) * 1992-10-31 2003-01-07 ソニー株式会社 プラズマ処理方法及びプラズマ処理装置
US5487785A (en) * 1993-03-26 1996-01-30 Tokyo Electron Kabushiki Kaisha Plasma treatment apparatus
EP0634778A1 (en) * 1993-07-12 1995-01-18 The Boc Group, Inc. Hollow cathode array
US5484486A (en) * 1994-05-02 1996-01-16 Applied Materials, Inc. Quick release process kit

Also Published As

Publication number Publication date
GB2312400A (en) 1997-10-29
GB9708271D0 (en) 1997-06-18
GB2312400B (en) 1999-10-27
KR100205098B1 (ko) 1999-06-15
US5895551A (en) 1999-04-20
JP3105467B2 (ja) 2000-10-30
JPH1050681A (ja) 1998-02-20

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