KR970072087A

KR970072087A - Method of forming a contact hole in a semiconductor device

Info

Publication number: KR970072087A
Application number: KR1019960011727A
Authority: KR
Inventors: 김영서
Original assignee: 김주용; 현대전자산업 주식회사
Priority date: 1996-04-18
Filing date: 1996-04-18
Publication date: 1997-11-07

Abstract

본 발명은 반도체 소자용 콘택홀 형성방법에 관한 것으로서 특히 습식 식각의 공정조건 및 위치에 따른 변화에도 안정적이고 균일한 콘택홀의 형성을 가능하게 하는 막 구조 및 콘택홀 형성방법에 관한 것이다. 콘택홀을 형성하기 전에 증착하는 BPSG막을 붕소와 인의 농도변화에 따라 3단계로 증착하고, 제2BPSG막내 인의 농도를 낮추어 콘택홀 형성시 습식식각의 에칭속도를 급격히 줄여 일정한 두께까지만 습식 에칭되게 하여 균일한 에칭을 얻음과 동시에 건식식각에서도 향상된 에칭균일성을 얻을 수 있다.The present invention relates to a method of forming a contact hole for a semiconductor device, and more particularly, to a film structure and a contact hole forming method capable of forming a stable and uniform contact hole even in accordance with a process condition and a position of wet etching. The BPSG film deposited before the formation of the contact hole is deposited in three steps according to the concentration of boron and phosphorus and the concentration of phosphorus in the second BPSG film is lowered so that the etching rate of the wet etching is drastically reduced during the formation of the contact hole, It is possible to obtain an improved etching uniformity even in a dry etching while obtaining one etching.

Description

Method of forming a contact hole in a semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.

제1A, 1B 및 1C도는 본 발명에 따른 반도체 소자의 콘택홀 형성 방법을 설명하기 위한 단면도.1A, 1B, and 1C are sectional views for explaining a method of forming a contact hole in a semiconductor device according to the present invention.

Claims

Depositing a BPSG film on the oxide film formed on the silicon substrate in three steps by varying the concentration of boron and phosphorous; and removing the oxide film and the BPSG film to form a contact hole. A method for forming a contact hole.

The method of claim 1, wherein the BPSG layer is formed of first and second BPSG layers.

3. The method of claim 2, wherein the thickness of the third BPSG film is deposited by a thickness of the BPSG film to be wet-etched in the contact hole forming process.

3. The method according to claim 2, wherein the concentration ratio of boron and phosphorus in the second BPSG film is B: P = 4: 1.

The method of claim 2 or 4, wherein the second BPSG film has an etching rate of 200 ANGSTROM / min when wet-etching the contact hole forming process.

The method of claim 2, wherein the thickness of the second BPSG layer is 100 to 200 ANGSTROM.

3. The method of claim 2, wherein the third BPSG film is removed by a wet etching process and the second and first BPSG films are removed by a dry etching process.

※ Note: It is disclosed by the contents of the first application.