KR970072046A - 기상 성장 방법 및 성장 장치 - Google Patents

기상 성장 방법 및 성장 장치 Download PDF

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KR970072046A
KR970072046A KR1019970014537A KR19970014537A KR970072046A KR 970072046 A KR970072046 A KR 970072046A KR 1019970014537 A KR1019970014537 A KR 1019970014537A KR 19970014537 A KR19970014537 A KR 19970014537A KR 970072046 A KR970072046 A KR 970072046A
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chamber
organometallic
gas
growth chamber
raw material
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KR1019970014537A
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KR100272881B1 (ko
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도루 다쓰미
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가네꼬 히사시
닛뽕덴끼 가부시끼가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

기판을 가열하는 가열 기구가 성장 챔버내에 배치되어, 성장 챔버로 흐르는 가스의 양을 제어하는 것이 가능한 벌브가 복수개의 유기 금속 가스 소오스와 성장 챔버 사이에 제공된다. 투명부를 갖는 불활성 가스 플라즈마 챔버가 제공되며, 플라즈마 챔버는 오리피스(orifice)를 통해 성장 챔버에 공급된 유기 금속 원료 가스의 일부를 받아들인다. 플라즈마 챔버는 플라즈마 챔버 및 성장 챔버의 차동 대기 배기를 실행하는 배기 시스템을 제공한다. 유기 금속 원료 가스의 금속 발광 특성을 분리함으로서 발광 특성을 측정하는 광학 시스템을 제공하고, 오리피스를 통해 성장 챔버로부터 플라즈마 챔버로 일부 공급된 유기 금속 원료 가스를 여기 시킴으로서 광이 금속으로부터 발광된다.

Description

기상 성장 방법 및 성장 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 실시예에 따른 CVD장치의 구성을 도시한 개략도.

Claims (3)

  1. 기상으로 기판상에서 유기 금속막을 형성하기 위해 기상 성장 챔버로 유기 금속 원료 가스를 공급하는 단계, 플라즈마 챔버의 대기 배기 속도가 상기 성장 챔버의 대개 배기 속도와 다르며, 오리피스를 통해 대기 배기되는 플라즈마 챔버내의 불활성 가스와 상기 성장 챔버에 공급된 상기 유기 금속 원료의 일부를 혼합하는 단계, 및 플라즈마중에 여기되어 발광하는 상기 유기 금속 원료 가스로부터, 상기 유기 금속 원료 가스의 금속 광학 특성 발광 강도에 의존하여, 상기 성장 챔버내의 상기 유기 금속 원료 가스의 분압을 모니터링 함으로서, 상기 유기 금속 원료 가스의 분압에 의해 상기 성장 챔버에 공급되는 상기 유기 금속 원료 가스의 양을 제어하는 단계로 이루어지는 것을 특징으로 하는 화학 기상 성장 방법.
  2. 기상 챔버에 유기 금속 원료 가스가 공급되고, 기판을 가열하는 수단을 갖는 기상 성장 챔버, 상기 성장 챔버로 흐르는 상기 유기 금속 원료 가스양의 가변 제어가 가능한 유기 금속 원료 가스 공급부, 상기 성장 챔버를 통해 상기 유기 금속 원료 가스의 일부가 공급되고, 상기 플라즈마 챔버는 투명부를 갖고, 상기 성장 챔버의 대기 배기와 차등한 배기 속도로 오리피스를 통해 대기 배기되는 플라즈마 챔버, 및 상기 플라즈마 챔버내에서 상기 유기 금속 원료 가스를 여기함으로서 발광되는 유기 금속 원료 가스의 금속 광학 특성을 분리하는 광학 시스템을 가짐으로서, 제어 수단이 상기 발광 강도에 의해 상기 성장 챔버로 공급될 상기 유기 금속 원료 가스의 양을 제어하는 제어 수단으로 이루어지는 것을 특징으로 하는 화학 기상 성장 장치.
  3. 제2항에 있어서, 상기 불활성 가스의 플라즈마 생성 소오스가 유도 결합고주파 플라즈마 생성 소오스인 것을 특징으로 하는 화학 기상 성장 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019970014537A 1996-04-22 1997-04-18 기상성장방법및성장장치 KR100272881B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP8100270A JP2907111B2 (ja) 1996-04-22 1996-04-22 気相成長方法及びその装置
JP96-100270 1996-04-22

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KR970072046A true KR970072046A (ko) 1997-11-07
KR100272881B1 KR100272881B1 (ko) 2000-12-01

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US (1) US6060391A (ko)
EP (1) EP0803588B1 (ko)
JP (1) JP2907111B2 (ko)
KR (1) KR100272881B1 (ko)
CA (1) CA2202697A1 (ko)
DE (1) DE69705348T2 (ko)

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US6060755A (en) * 1999-07-19 2000-05-09 Sharp Laboratories Of America, Inc. Aluminum-doped zirconium dielectric film transistor structure and deposition method for same
JP3596416B2 (ja) * 2000-03-29 2004-12-02 セイコーエプソン株式会社 セラミックスの製造方法およびその製造装置
JP4257485B2 (ja) * 2000-06-21 2009-04-22 セイコーエプソン株式会社 セラミックス膜およびその製造方法ならびに半導体装置および圧電素子
US9376754B2 (en) 2009-02-12 2016-06-28 Mitsui Engineering & Shipbuilding Thin film forming method
JP4575984B2 (ja) * 2009-02-12 2010-11-04 三井造船株式会社 原子層成長装置および薄膜形成方法

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EP0408753B1 (en) * 1988-09-28 1993-06-16 Oki Electric Industry Company, Limited Process for forming superconducting thin film
US5202283A (en) * 1991-02-19 1993-04-13 Rockwell International Corporation Technique for doping MOCVD grown crystalline materials using free radical transport of the dopant species
JPH088212A (ja) * 1994-06-22 1996-01-12 Sony Corp プラズマｃｖｄ方法
US5576071A (en) * 1994-11-08 1996-11-19 Micron Technology, Inc. Method of reducing carbon incorporation into films produced by chemical vapor deposition involving organic precursor compounds

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Publication number Publication date
EP0803588B1 (en) 2001-06-27
EP0803588A1 (en) 1997-10-29
DE69705348D1 (de) 2001-08-02
DE69705348T2 (de) 2002-03-14
JPH09289202A (ja) 1997-11-04
JP2907111B2 (ja) 1999-06-21
KR100272881B1 (ko) 2000-12-01
US6060391A (en) 2000-05-09
CA2202697A1 (en) 1997-10-22

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