DE69705348D1 - Verfahren zur Gasphasenabscheidung und Vorrichtung zur Abscheidung - Google Patents

Verfahren zur Gasphasenabscheidung und Vorrichtung zur Abscheidung

Info

Publication number
DE69705348D1
DE69705348D1 DE69705348T DE69705348T DE69705348D1 DE 69705348 D1 DE69705348 D1 DE 69705348D1 DE 69705348 T DE69705348 T DE 69705348T DE 69705348 T DE69705348 T DE 69705348T DE 69705348 D1 DE69705348 D1 DE 69705348D1
Authority
DE
Germany
Prior art keywords
gas phase
phase separation
separation method
gas
separation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69705348T
Other languages
English (en)
Other versions
DE69705348T2 (de
Inventor
Toru Tatsumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of DE69705348D1 publication Critical patent/DE69705348D1/de
Application granted granted Critical
Publication of DE69705348T2 publication Critical patent/DE69705348T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Formation Of Insulating Films (AREA)
DE69705348T 1996-04-22 1997-04-15 Verfahren zur Gasphasenabscheidung und Vorrichtung zur Abscheidung Expired - Fee Related DE69705348T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8100270A JP2907111B2 (ja) 1996-04-22 1996-04-22 気相成長方法及びその装置

Publications (2)

Publication Number Publication Date
DE69705348D1 true DE69705348D1 (de) 2001-08-02
DE69705348T2 DE69705348T2 (de) 2002-03-14

Family

ID=14269521

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69705348T Expired - Fee Related DE69705348T2 (de) 1996-04-22 1997-04-15 Verfahren zur Gasphasenabscheidung und Vorrichtung zur Abscheidung

Country Status (6)

Country Link
US (1) US6060391A (de)
EP (1) EP0803588B1 (de)
JP (1) JP2907111B2 (de)
KR (1) KR100272881B1 (de)
CA (1) CA2202697A1 (de)
DE (1) DE69705348T2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6060755A (en) * 1999-07-19 2000-05-09 Sharp Laboratories Of America, Inc. Aluminum-doped zirconium dielectric film transistor structure and deposition method for same
JP3596416B2 (ja) * 2000-03-29 2004-12-02 セイコーエプソン株式会社 セラミックスの製造方法およびその製造装置
JP4257485B2 (ja) * 2000-06-21 2009-04-22 セイコーエプソン株式会社 セラミックス膜およびその製造方法ならびに半導体装置および圧電素子
US9376754B2 (en) 2009-02-12 2016-06-28 Mitsui Engineering & Shipbuilding Thin film forming method
JP4575984B2 (ja) * 2009-02-12 2010-11-04 三井造船株式会社 原子層成長装置および薄膜形成方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0408753B1 (de) * 1988-09-28 1993-06-16 Oki Electric Industry Company, Limited Verfahren zur herstellung eines supraleitfähigen dünnfilmes
US5202283A (en) * 1991-02-19 1993-04-13 Rockwell International Corporation Technique for doping MOCVD grown crystalline materials using free radical transport of the dopant species
JPH088212A (ja) * 1994-06-22 1996-01-12 Sony Corp プラズマｃｖｄ方法
US5576071A (en) * 1994-11-08 1996-11-19 Micron Technology, Inc. Method of reducing carbon incorporation into films produced by chemical vapor deposition involving organic precursor compounds

Also Published As

Publication number Publication date
EP0803588B1 (de) 2001-06-27
EP0803588A1 (de) 1997-10-29
KR970072046A (ko) 1997-11-07
DE69705348T2 (de) 2002-03-14
JPH09289202A (ja) 1997-11-04
JP2907111B2 (ja) 1999-06-21
KR100272881B1 (ko) 2000-12-01
US6060391A (en) 2000-05-09
CA2202697A1 (en) 1997-10-22

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee