KR970063561A - 플라스마 에칭용 전극판 - Google Patents

플라스마 에칭용 전극판 Download PDF

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Publication number
KR970063561A
KR970063561A KR1019970004439A KR19970004439A KR970063561A KR 970063561 A KR970063561 A KR 970063561A KR 1019970004439 A KR1019970004439 A KR 1019970004439A KR 19970004439 A KR19970004439 A KR 19970004439A KR 970063561 A KR970063561 A KR 970063561A
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KR
South Korea
Prior art keywords
plasma etching
electrode
glass
electrode plate
carbon
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Application number
KR1019970004439A
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English (en)
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KR100427117B1 (ko
Inventor
도시하루 우웨이
다케시 마츠오카
도미오 하야
Original Assignee
오다케 시기오
도카이 카본 가부시키가이샤
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Application filed by 오다케 시기오, 도카이 카본 가부시키가이샤 filed Critical 오다케 시기오
Publication of KR970063561A publication Critical patent/KR970063561A/ko
Application granted granted Critical
Publication of KR100427117B1 publication Critical patent/KR100427117B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/3255—Material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10S156/914—Differential etching apparatus including particular materials of construction

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Ceramic Products (AREA)

Abstract

본 발명에 따른 플라스마 에칭용 전극판은 300K에서의 열전도율이5W/mㆍK이상인 특성을 가지며, 또한 두께가 4.5㎜이상의 유리형 카본판으로 이루어진다. 상기 전극판의 구성에 의해, 전극 표면의 온도 분포가 균등화되고, 에칭레이트의 균일성을 개선하여, 8인치 지름을 초과하는 대형 반도체 웨이퍼를 대상으로 한 경우에도, 장기간에 걸쳐서 안정된 에칭 가공을 행할 수 있다. 부피 밀도가 1.53g/cc이상인 유리형 카본을 적용하는 것도 바람직하다.
상기 전극판용 유리형 카본은 탄화율 20%이상의 열경화성 수지의 1종 또는 2종 이상으로 수지 조성물을 원료로 하여 수득된다.

Description

플라스마 에칭용 전극판
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 열전도율과 200시간 경과시 에칭율(E/R)의 균일성을 관계를 도시하는 그래프.

Claims (3)

  1. 온도 300K에서의 열전도율이 5W/mㆍK이상인 특성을 가지며, 두께가 4.5㎜이상의 유리형 카본판으로 이루어지는 것을 특징으로 하는 플라스마 에칭용 전극판.
  2. 제1항에 있어서, 부피 밀도가 1.53ｇ/cc이상의 유리형 카본판으로 이루어지는 것을 특징으로 하는 플라스마 에칭용 전극판.
  3. 제1항에 있어서, 탄화율 20%이상의 열경화성 수지의 1종 또는 2종 이상으로 이루어지는 수지조성물을 원료로 하여 수득된 유리형 카본판으로 이루어지는 것을 특징으로 하는 플라스마 에칭용 전극판.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019970004439A 1996-02-15 1997-02-14 플라스마에칭용전극판 KR100427117B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP5246796 1996-02-15
JP96-52467 1996-02-15

Publications (2)

Publication Number Publication Date
KR970063561A true KR970063561A (ko) 1997-09-12
KR100427117B1 KR100427117B1 (ko) 2004-09-04

Family

ID=12915533

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019970004439A KR100427117B1 (ko) 1996-02-15 1997-02-14 플라스마에칭용전극판

Country Status (5)

Country Link
US (1) US5993596A (ko)
EP (1) EP0791948B1 (ko)
KR (1) KR100427117B1 (ko)
DE (1) DE69736685T2 (ko)
TW (1) TW449820B (ko)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001088966A2 (en) * 2000-05-12 2001-11-22 Tokyo Electron Limited Method of adjusting the thickness of an electrode in a plasma processing system
US20020127853A1 (en) * 2000-12-29 2002-09-12 Hubacek Jerome S. Electrode for plasma processes and method for manufacture and use thereof
US6740403B2 (en) 2001-04-02 2004-05-25 Toyo Tanso Co., Ltd. Graphitic polyhederal crystals in the form of nanotubes, whiskers and nanorods, methods for their production and uses thereof
JP3876167B2 (ja) * 2002-02-13 2007-01-31 川崎マイクロエレクトロニクス株式会社 洗浄方法および半導体装置の製造方法
US20040033361A1 (en) * 2002-08-06 2004-02-19 Kabushiki Kaisha Kobe Seiko Sho(Kobe Steel, Ltd.) Component of glass-like carbon for CVD apparatus and process for production thereof
CN108984918B (zh) * 2018-07-20 2023-04-18 辽宁石油化工大学 一种电渣重熔自耗电极熔化速率的预测方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07114198B2 (ja) * 1989-10-02 1995-12-06 東海カーボン株式会社 プラズマエッチング用電極板
JPH0814033B2 (ja) * 1990-04-02 1996-02-14 東芝セラミックス株式会社 プラズマエッチング用電極板
US5074456A (en) * 1990-09-18 1991-12-24 Lam Research Corporation Composite electrode for plasma processes
JP3252330B2 (ja) * 1991-09-20 2002-02-04 東芝セラミックス株式会社 プラズマエッチング用電極板
JPH05208867A (ja) * 1992-01-28 1993-08-20 Tokai Carbon Co Ltd 高耐食性ガラス状カーボン材
JP2873988B2 (ja) * 1992-05-25 1999-03-24 東海カーボン株式会社 プラズマエッチング用電極板
EP0573915A1 (en) * 1992-06-12 1993-12-15 Nisshinbo Industries, Inc. Electrode plate and jig for use in plasma etching
JP3242166B2 (ja) * 1992-11-19 2001-12-25 株式会社日立製作所 エッチング装置
JPH0941166A (ja) * 1995-07-31 1997-02-10 Kobe Steel Ltd エッチング用電極、及びその製造方法

Also Published As

Publication number Publication date
TW449820B (en) 2001-08-11
DE69736685D1 (de) 2006-11-02
EP0791948A3 (en) 1999-06-23
EP0791948A2 (en) 1997-08-27
KR100427117B1 (ko) 2004-09-04
DE69736685T2 (de) 2007-10-04
EP0791948B1 (en) 2006-09-20
US5993596A (en) 1999-11-30

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