KR970063444A - 게르마늄 도핑된 bpsg 박막 형성 방법 및 그 장치 - Google Patents

게르마늄 도핑된 bpsg 박막 형성 방법 및 그 장치 Download PDF

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KR970063444A
KR970063444A KR1019970004344A KR19970004344A KR970063444A KR 970063444 A KR970063444 A KR 970063444A KR 1019970004344 A KR1019970004344 A KR 1019970004344A KR 19970004344 A KR19970004344 A KR 19970004344A KR 970063444 A KR970063444 A KR 970063444A
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substrate
gas
chamber
germanium
processing
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카쓰린 러쎌
스투아르도 로브레스
방 씨. 엔구엔
비스베스와렌 시바라마크리쉬난
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제임스 조셉 드롱
어플라이드 머티어리얼스, 인코포레이티드
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Abstract

본 발명은 웨이퍼 또는 기판 상에 산화 실리콘층을 증착하기 위한 방법 및 장치에 관한 것이다. 본 발명의 방법은 800℃ 이하의 재흐름 온도를 가지는 게르마늄 도핑된 BPSG 산화층을 형성하기 위해 실리콘, 산소, 붕소, 인, 및 게르마늄을 포함하는 처리 가스를 처리 챔버에 유입하는 단계를 포함한다. 본 방법의 바람직한 실시예는 대기압보다 낮은 CVD 또는 플라즈마 강화된 처리 장치에서 수행된다.

Description

게르마늄 도핑된 BPSG 박막 형성 방법 및 그 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명이 수행될 수 있는 간략화된 병렬 플레이트 화학 기상 증착 반응기의 수직 단면도.

Claims (36)

  1. 처리 챔버내의 기판 상에 산화 실린콘층을 증착하기 위한 방법에 있어서, (a) 기판 처리 챔버내에 붕소, 인, 실리콘, 산소 및 게르마늄을 포함하는 처리 가스를 유입하는 단계; 및 (b) 상기 챔버내에 있는 기판 상에 게르마늄 도핑된 붕소 인 실리케이트 글라스(BPSG) 층을 증착하기 위해 상기 처리 가스로부터 플라즈마를 형성하는 단계를 포함하는 것을 특징으로 하는 방법.
  2. 제1항에 있어서, 상기 처리 챔버내의 압력을 약 1-20 torr로 설정하고 유지하는 단계를 더 포함하는 것을 특징으로 하는 방법.
  3. 제2항에 있어서, 상기 기판의 상부 표면 근처의 온도를 약 400-500℃까지 가열하는 단계를 더 포함하는 것을 특징으로 하는 방법.
  4. 제3항에 있어서, 상기 게르마늄 도핑된 BPSG층은 분당 약 400 옹스트롬 이상의 속도로 증착되는 것을 특징으로 하는 방법.
  5. 제4항에 있어서, 상기 처리 가스 중의 인은 트리에틸포스페이트(TEPO) 또는 트리메틸포스피트(TMPi)로 부터 형성되는 것을 특징으로 하는 방법.
  6. 제5항에 있어서, 상기 플라즈마는 약 13.56 ㎒의 주파수에서 약 1200 와트 미만의 RF 전력으로 형성되는 것을 특징으로 하는 방법.
  7. 제1항에 있어서, 상기 처리 가스 중의 인은 트리에틸포스페이트(TEPO) 또는 트리메틸포스피트(TMPi)로 부터 형성되며, (a) 상기 처리 챔버내의 압력을 약 5-16 torr로 설정하고 유지하는 단계; (b) 상기 기판의상부 표면 근처의 온도를 약 430-480℃까지 가열하는 단계; 및 (c) 약 13.56 ㎒의 주파수에서 약 1200 와트미만의 RF 전력으로부터 상기 플라즈마를 형성하는 단계를 더 포함하는 것을 특징으로 하는 방법.
  8. 제7항에 있어서, 상기 게르마늄 도핑된 BPSG 층은 분당 약 4000 옹스트롬 이상의 속도로 증착되는 것을 특징으로 하는 방법.
  9. 제8항에 있어서, 상기 처리 가스중의 실리콘은 테트라에쓰옥시실란(TEOS)으로 형성되는 것을 특징으로 하는 방법.
  10. 제9항에 있어서, 상기 처리 가스 중의 게르마늄은 테트라에쓰옥시 게르마늄 (TEOG) 또는 테트라메틸옥시게르마늄(TMOG)로 형성되는 것을 특징으로 하는 방법.
  11. 제10항에 있어서, 상기 처리 가스 중의 붕소는 트리에틸보레이트(TEB)로부터 형성되는 것을 특징으로 하는 방법.
  12. 제1항의 방법에 따라 증착된 층을 가지는 집적 회로.
  13. 처리 챔버내의 기판 상에 산화 실리콘 층을 증착하기 위한 방법에 있어서, (a) 기판 처리 챔버내에 붕소, 인, 게르마늄, 테트라에틸옥시실란(TEOS) 및 오존을 포함하는 처리 가스를 유입하는 단계; (b) 상기 처리 챔버내의 압력을 약 100-600 torr의 선택된 압력으로 설정하고 유지하는 단계; 및 (c) 상기 기판 상에 게르마늄 도핑된 붕소 인 실리케이트 글라스를 증착하기 위해 약 400-500℃의 온도까지 상기 챔버에 있는 기판의 상부 표면을 가열하는 단계를 포함하는 것을 특징으로 하는 방법.
  14. 제13항에 있어서, 상기 게르마늄 도핑된 BPSG층은 분당 약 400 옹스트롬 이상의 속도로 증착되는 것을특징으로 하는 방법.
  15. 제13항에 있어서, 상기 처리 가스는 트리에틸포스페이트(TEPO)를 포함하는 것을 특징으로 하는 방법.
  16. 제15항에 있어서, (a) 상기 처리 챔버내의 압력을 약 20-250 torr로 설정하고 유지하는 단계; 및 (b) 상기 기판의 상부 표면 근처의 온도를 약 450-480℃까지 가열하는 단계를 더 포함하는 것을 특징으로 하는 방법.
  17. 제13항의 방법에 따라 증착되는 층을 가지는 집적 회로.
  18. 진공 챔버를 형성하기 위한 하우징; 상기 하우징내에 배치되어 기판을 홀딩하기 위한 기판 홀더; 상기 기판 상에 층을 증착하기 위하여 상기 진공 챔버에 처리 가스를 유입하기 위한 가스 분배기; 상기 가스 분배기에 결합되어 상기 처리 가스를 형성하기 위해 혼합되는 다수의 가스를 혼합하는 가스 혼합 영역; 상기 가스 혼합 영역에 결합되어 상기 가스 혼합 챔버내에 다수의 가스를 유입하기 위한 가스 분배 시스템; 상기 기판을 가열하기 위한 히터; 상기 진공 챔버를 가압하기 위한 진공 시스템; 상기 처리 가스로부터 플라즈마를 형성하기 위해 공급되는 RF 전력 공급; 상기 가스 분배 시스템, 상기 히터, 상기 RF 전력 공급 및 상기 진공 시스템을 제어하기 위한 제어기; 및 상기 제어기에 결합되고, 상기 화학 기상 증착 반응 시스템의 작동을 지시하기 위해 구현되는 컴퓨터 판독 프로그램을 가지는 컴퓨터 판독 매체를 구비하는 메모리를 포함하는데, 상기 컴퓨터 판독 프로그램은, 상기 기판을 약 400-500℃의 온도까지 가열하기 위해 상기 히터를 제어하기 위한 제1세트의 컴퓨터 명령; 상기 진공 챔버를 약 1-20 torr의 압력으로 설정하고 유지하기 위해 상기 진공 시스템을 제어하기 위한 제2세트의 컴퓨터 명령; 상기 가스 혼합 챔버내에 실리콘, 산소, 붕소, 인 및 게르마늄을 포함하는상기 가스를 유입하기 위해 상기 가스 분배 시스템을 제어하기 위한 제3세트의 컴퓨터 명령; 및 상기 플라즈마를 형성하기 위해 상기 RF 전력 공급을 제어하기 위한 제4세트의 컴퓨터 명령을 포함하는 것을 특징으로 하는 화학 기상 증착 반응 시스템.
  19. 제18항에 있어서, 상기 RF 전력 공급은 고주파수 및 저주파수 컴포넌트를 가지는 혼성 주파수 전력공급이며, 상기 제4세트의 명령은 약 100-1000 와트에서 상기 RF 전력 공급의 상기 고주파수 컴포넌트를 작동시키고 약 20-450 와트에서 상기 RF 전력 공급의 상기 저주파수 컴포넌트를 작동시키는 것을 특징으로 하는 화학 기상 증착 반응 시스템.
  20. 제19항에 있어서, 상기 제4세트의 명령은 약 13.56 ㎒의 주파수로 상기 RF 전력 공급의 고주파수 컴포넌트를 구동하고, 약 350 ㎑의 주파수로 상기 RF 전력 공급의 저주파수 컴포넌트를 구동하는 것을 특징으로 하는 화학 기상 증착 반응 시스템.
  21. 제18항에 있어서, 상기 인은 트리에틸포스페이트(TEPO) 또는 트리메틸포스피트(TMPi)의 형태로 상기소스 분배 시스템으로부터 상기 가스 혼합 챔버내로 유입되는 것을 특징으로 하는 화학 기상 증착 반응 시스템.
  22. 제21항에 있어서, 상기 층은 적어도 분당 약 4000 옹스트롬의 속도로 상기 기판 상에 증착되는 것을 특징으로 하는 화학 기상 증착 반응 시스템.
  23. 진공 챔버를 형성하기 위한 하우징; 상기 하우징내에 배치되어 기판을 홀딩하기 위한 기판 홀더; 상기 기판 상에 층을 증착하기 위하여 상기 진공 챔버내에 처리 가스를 유입하기 위한 가스 분배기; 상기 가스 분배기에 결합되어 상기 처리 가스를 형성하기 위하여 혼합되는 다수의 가스를 혼합하기 위한 가스 혼합 영역; 상기 가스 혼합 영역에 결합되어 상기 가스 혼합 챔버내에 다수의 가스를 유입하기 위한 가스 분배 시스템; 상기 기판을 가열하기 위한 히터; 상기 진공 챔버를 가압하기 위한 진공 시스템; 상기 가스 분배 시스템, 상기 히터 및 상기 진공 시스템을 제어하기 위한 제어기; 및 상기 제어기에 결합되고, 상기 화학 기상 증착 반응 시스템의 작동을 지시하기 위해 구현되는 컴퓨터 판독 프로그램을 가지는 컴퓨터 판독 매체를 구비하는 메모리를 포함하는데, 상기 컴퓨터 판독 프로그램은, 약 400-500℃의 온도까지 상기 기판을 가열하기 위해 상기 히터를 제어하기 위한 제1세트의 컴퓨터 명령; 약 100-600 torr의 압력으로 상기 진공 챔버를 설정하고 유지하기위해 상기 진공 시스템을 제어하기 위한 제2세트의 컴퓨터 명령; 및 상기 가스 혼합 챔버내에 실리콘, 산소,붕소, 인 및 게르마늄을 포함하는 상기 가스를 유입하기 위해 상기 가스 분배 시스템을 제어하기 위한 제3세트의 컴퓨터 명령을 포함하는 것을 특징으로 하는 화학 기상 증착 반응 시스템.
  24. 제23항에 있어서, 상기 인은 트리에틸포스페이트(TEPO) 또는 트리메틸포스피트(TMP1)의 형태로 상기소스 분배 시스템으로부터 상기 가스 혼합 챔버내로 유입되는 것을 특징으로 하는 화학 기상 증착 반응 시스템.
  25. 제24항에 있어서, 상기 층은 적어도 분당 약 4000 옹스트롬의 속도로 상기 기판 상에 증착되는 것을 특징으로 하는 화학 기상 증착 반응 시스템.
  26. 반도체 기판 상에 형성되는 집적 회로에 있어서, (a) 상기 기판내에 형성된 다수의 능동 소자; (b) 상기 기판에 걸쳐 형성되는 금속층; (c) 상기 금속층의 선택된 부분을 상기 다수의 능동 소자에 대한 선택된 영역에 전기적으로 접속시키기 위해 도전 금속으로 채워지는 다수의 패턴화된 홀을 가지고, 적어도 분당 4000 옹스트롬의 속도로 증착되는 상기 기판과 상기 금속층 사이에 형성되는 3.0-5.0 중량 퍼센트 붕소, 3.0-6.0 중량 퍼센트 인 및 3.0-6.0 중량 퍼센트 게르마늄을 가지는 게르마늄 도핑된 붕소 인 실리케이트 글라스막을 구비하는 절연층을 포함하는 것을 특징으로 하는 집적 회로.
  27. 제26항에 있어서, 상기 절연층은 5-16 torr의 압력으로 유지되는 처리 챔버 내에서 실리콘, 붕소, 인, 산소 및 게르마늄을 포함하는 처리 가스의 플라즈마 반응에 의해 증착되며, 400-500℃의 온도로 가열되는 것을 특징으로 하는 집적 회로.
  28. 제26항에 있어서, 상기 절연층은 100-600 torr의 압력으로 유지되는 처리 챔버에서 실리콘, 붕소, 인, 산소 및 게르마늄을 포함하는 처리 가스의 열반응에 의해 증착되며, 400-500℃의 온도로 가열되는 것을 특징으로 하는 집적 회로.
  29. (a) 처리 챔버; (b) 상기 처리 챔버에 처리 가스를 운반하도록 구성되는 가스 운반 시스템; (c) 상기 처리 가스로부터 플라즈마를 형성하도록 구성되는 플라즈마 발생 시스템; (d) 상기 가스 운반 시스템 및 상기 플라즈마 발생 시스템을 제어하도록 구성되는 제어기; 및 (e) 상기 제어기에 결합되고, 상기 기판 처리 장치의 작동을 지시하기 위해 구현된 컴퓨터 판독 프로그램을 가지는 컴퓨터 판독 매체를 구비하는 메모리를 포함하는데, 상기 컴퓨터 판독 프로그램은, (ⅰ) 붕소, 인, 실리콘, 산소 및 게르마늄을 포함하는 처리 가스가 상기 기판처리 챔버에 유입하도록 상기 가스 운반 시스템을 제어하기 위한 제1세트의 컴퓨터 명령; 및 (ⅱ) 상기 챔번에있는 기판 상에 게르마늄 도핑된 붕소 인 실리케이트 글라스(BPSG) 층을 증착하기 위해 상기 처리 가스로 부터플라즈마를 형성하도록 상기 플라즈마 발생 시스템을 제어하기 위한 제2세트의 컴퓨터 명령를 포함하는 것을을 특징으로 하는 기판 처리 장치.
  30. 제29항에 있어서, 상기 챔버내의 선택된 압력을 설정하고 유지하도록 구성되는 진공 시스템을 더 포함하고, 상기 진공 시스템과 상기 컴퓨터 판독 프로그램을 제어하도록 구성되는 상기 제어기는 약 1-20 torr로 상기 챔버내의 압력을 유지하도록 상기 진공 시스템을 제어하기 위한 제3세트의 컴퓨터 명령을 더 포함하는 것을 특징으로 하는 기판 처리 장치.
  31. 제30항에 있어서, 상기 챔버를 선택된 온도까지 가열하도록 하기 위해 구성되는 가열 시스템을 더 포함하고, 상기 제어기는 상기 가열 시스템의 작동을 제어하기 위해 구성되며, 상기 컴퓨터 판독 프로그램은 약 400-500℃의 온도까지 상기 기판의 상부 표면을 가열하도록 상기 가열 시스템을 제어하기 위한 제4세트의 컴퓨터 명령을 더 포함하는 것을 특징으로 하는 기판 처리 장치.
  32. 제31항에 있어서, 상기 게르마늄 도핑된 BPSG층이 적어도 분당 약 400 옹스트롬 이상의 속도로 증착되도록 상기 컴퓨터 판독 명령은 상기 분배 시스템, 상기 가열 시스템 및 상기 진공 시스템을 제어하는 것을 특징으로 하는 기판 처리 장치.
  33. (a) 처리 챔버; (b) 상기 처리 챔버에 처리 가스를 운반하도록 구성되는 가스 운반 시스템; (c) 선택된 온도까지 상기 챔버를 가열하도록 구성되는 가열 시스템; (d) 상기 챔버내의 선택된 압력을 설정하고 유지하도록 구성되는 진공 시스템; (e) 상기 가스 운반 시스템, 상기 진공 시스템 및 상기 가열 시스템을 제어하도록 구성되는 제어기; 및 (f) 상기 제어기에 결합되고, 상기 기판 처리 장치의 작동을 지시하기 위해 구현되는 컴퓨,터 판독 프로그램을 가지는 컴퓨터 판독 매체를 구비하는 메모리를 포함하는데, 상기 컴퓨터 판독 프로그램은(ⅰ) 붕소, 인, 게르마늄, 테트라에틸옥시실란(TEOS) 및 오존을 포함하는 처리 가스가 상기 챔버내에 유입하도하도록 상기 가스 운반 시스템을 제어하기 위한 제1세트의 컴퓨터 명령; (ⅱ) 상기 챔버내의 약 100-600 torr의 압력을 설정하고 유지하도록 상기 진공 시스템을 제어하기 위한 제2세트의 컴퓨터 명령; 및 (ⅲ) 상기 기판상에 게르마늄 도핑된 붕소 인 실리케이트 글라스 층을 증착하도록 약 400-500℃의 온도까지 상기 챔버에 있는 기판의 상부 표면을 가열하도록 상기 가열 시스템을 제어하기 위한 제3세트의 컴퓨터 명령을 포함하는 것을특징으로 하는 기판 처리 장치.
  34. 제33항에 있어서, 상기 게르마늄 도핑된 BPSG 층이 분당 약 4000 옹스트롬 이상의 속도로 증착되도록 상기 컴퓨터 판독 명령은 상기 가스 분배 시스템, 상기 가열 시스템 및 상기 진공 시스템을 제어하는 것을 특징으로 하는 기판 처리 장치.
  35. 제33항에 있어서, 상기 가스 운반 시스템은 상기 챔버내에 트리에틸포스페이트(TEPO)를 포함하는 것을 특징으로 하는 기판 처리 장치.
  36. 제33항에 있어서, 상기 제2세트의 컴퓨터 명령은 약 200-250 torr로 상기 처리 챔버내의 압력을 설정하고 유지하도록 상기 진공 시스템을 제어하고, 상기 제3세트의 컴퓨터 명령은 약 450-480℃의 온도까지 상기 기판의 상부 표면을 가열하도록 상기 히터를 제어하는 것을 특징으로 하는 기판 처리 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019970004344A 1996-02-14 1997-02-14 게르마늄도핑된bpsg박막형성방법및그장치 KR100292456B1 (ko)

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