KR970060616A - Semiconductor laser diode and manufacturing method thereof - Google Patents

Semiconductor laser diode and manufacturing method thereof Download PDF

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Publication number
KR970060616A
KR970060616A KR1019960001019A KR19960001019A KR970060616A KR 970060616 A KR970060616 A KR 970060616A KR 1019960001019 A KR1019960001019 A KR 1019960001019A KR 19960001019 A KR19960001019 A KR 19960001019A KR 970060616 A KR970060616 A KR 970060616A
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KR
South Korea
Prior art keywords
layer
ridge
clad layer
stacked
clad
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KR1019960001019A
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Korean (ko)
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KR100357980B1 (en
Inventor
방동수
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김광호
삼성전자 주식회사
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Publication of KR970060616A publication Critical patent/KR970060616A/en
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Publication of KR100357980B1 publication Critical patent/KR100357980B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2272—Buried mesa structure ; Striped active layer grown by a mask induced selective growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/06—LPE

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)

Abstract

본 발명은 반도체 레이저 다이오드 및 그 제조방법에 관한것으로서, 전기적, 광학적 특성을 향상시키고, 제작공정을 단순화 하기 위해, 기판 상에 제1크래드층; 상기 제1크래드에층 적층된 활성층; 상기 활성층에 적층되고 리지가 형성된 제2크래드층; 상기 리지상층에 적층된 전극접촉층을 포함하는 반도체 레이저 다이오드에 있어서, 상기 리지가 메사형이며, 전극 상기 적층 구조의 최상면을 덥도록 형성되어 있다.The present invention relates to a semiconductor laser diode and a method of manufacturing the same, and in order to improve the electrical and optical characteristics and simplify the fabrication process, a semiconductor laser diode having a first clad layer, An active layer stacked on the first clad; A second clad layer stacked on the active layer and having a ridge formed thereon; Wherein the ridge is mesa-shaped, and the electrode is formed so as to cover the uppermost surface of the laminate structure.

또, 기판 상에 제1크래드층, 활성층, 제2크래드층을 순차 적층하는 단계; 상기 제2크래드층 상면에 그 중앙이 소정폭의 스트라이프상이 되도록 오픈영역을 가진 마스크층을 형성하는 단계; 상기 오픈영역을 통해 노출된 상기 제2크래드층에 상기 리지가 상기 마스크층에서 돌출되도록 성정하는 단계; 상기 리지의 상면에 전극접촉층을 적층하는 단계; 상기 적층된 구조의 최상면에 상부 전극을 적층하는 단계; 를 포함하는 것을 특징으로 한다.The method may further include: sequentially laminating a first clad layer, an active layer, and a second clad layer on a substrate; Forming a mask layer on the upper surface of the second clad layer, the mask layer having an open region such that a center thereof is in a stripe shape with a predetermined width; Forming the second clad layer exposed through the open region such that the ridge protrudes from the mask layer; Stacking an electrode contact layer on an upper surface of the ridge; Stacking an upper electrode on the uppermost surface of the stacked structure; And a control unit.

상기와 같은 발명을 채용함으로써 전기적, 광학적 특성을 향상시키고, 제작공정을 단순화 하고, 단일모드 발진이 좋은 반도체 레이저 다이오드 및 그 제조방법에 제공할 수 있다.By adopting the above-described invention, it is possible to provide the semiconductor laser diode having improved electrical and optical characteristics, simplifying the fabrication process, and excellent single mode oscillation and a method of manufacturing the same.

Description

반도체 레이저 다이오드 및 그 제조방법Semiconductor laser diode and manufacturing method thereof

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.

제8도는 본 발명에 따른 반도체 레이저 다이오드의 수직 단면도.FIG. 8 is a vertical sectional view of a semiconductor laser diode according to the present invention; FIG.

Claims (5)

그 저면에 하부 전극이 적층된 기판과; 상기 기판상에 적층된 제1크래드층과; 상기 제1크래드층에 적층된 활성층과; 상기 활성층에 적층되고 그 상부 중앙에 리지가 성장된 제2크래드층과; 상기 제2크래드층 상면에 상기 리지를 제외한 부분을 덮도록 적층된 마스크층과; 상기 리지상면에 적층된 전극접촉층과; 상기 전극접촉층에 적층되는 상부 전극을 포함하는 반도체 레이저 다이오드에 있어서, 상기 리지가 메사형 이며, 상기 상부전극이 상기 리지의 측면과 상기 전극접촉층을 덮도록 적층되어 있는 것을 특징으로 하는 반도체 레이저 다이오드.A substrate on which a lower electrode is stacked; A first clad layer stacked on the substrate; An active layer stacked on the first clad layer; A second clad layer stacked on the active layer and having ridges grown at the upper center thereof; A mask layer stacked on the upper surface of the second clad layer to cover a portion except for the ridge; An electrode contact layer laminated on the upper surface of the ridge; And an upper electrode laminated on the electrode contact layer, wherein the ridge is mesa-shaped, and the upper electrode is stacked so as to cover the side surface of the ridge and the electrode contact layer. diode. 제1항에 있어서, 상기 리지가 선택적 결정성장법에 의해 형성되는 것을 특정으로 하는 반도체 레이저.The semiconductor laser according to claim 1, wherein the ridge is formed by a selective crystal growth method. 기판 상에 제1크래드층, 활성층, 제2크래드층을 순차 적층하는 단계; 상기 제2크래드층 상면에 그 중앙이 소정폭의 스트라이프상에 되도록 오픈영역을 가진 마스크층을 형성하는 단계; 상기 오픈영역을 통해 노출된 상기 제2크래드층에 상기 리지가 상기 마스크층에서 돌출되도록 성장하는 단계; 상기 리지의 상면에 전극접촉층을 적층하는 단계; 상기 적층된 구조의 최상면에 상부 전극을 적층하는 단계;를 포함하는 반도체 레이저 다이오드 제조 방법.Sequentially stacking a first clad layer, an active layer, and a second clad layer on a substrate; Forming a mask layer having an open region such that a center thereof is on a stripe of a predetermined width on an upper surface of the second clad layer; Growing the ridge to protrude from the mask layer in the second clad layer exposed through the open region; Stacking an electrode contact layer on an upper surface of the ridge; And stacking an upper electrode on the uppermost surface of the stacked structure. 제3항에 있어서, 상기 제2크래드층의 두께가 결정성장법에 의해 결정되는 단계를 포함하는 반도체 레이저 다이오드 제조방법.4. The method of claim 3, wherein the thickness of the second clad layer is determined by a crystal growth method. 제3항에 있어서, 상기 리지를 선택적 결정성장법으로 성장시켜 메사형으로 형성하는 단계를 포함하는 것을 특징으로 하는 레이저 디이오드 제조방법.4. The method according to claim 3, comprising growing the ridge by a selective crystal growth method to form mesa. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: It is disclosed by the contents of the first application.
KR1019960001019A 1996-01-18 1996-01-18 Semiconductor laser diode and manufacturing method thereof KR100357980B1 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR960014732B1 (en) * 1992-12-22 1996-10-19 양승택 Rwg type semiconductor laser diode and manufacture thereof
KR100261238B1 (en) * 1993-09-28 2000-07-01 윤종용 Manufacturing method of a laser diode
KR100265805B1 (en) * 1993-10-26 2000-09-15 윤종용 Semiconductor laser diode and its manufacturing method
US5383211A (en) * 1993-11-02 1995-01-17 Xerox Corporation TM-polarized laser emitter using III-V alloy with nitrogen
KR960032819A (en) * 1995-02-04 1996-09-17 김광호 Semiconductor laser diode and manufacturing method thereof

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