KR970060613A - Semiconductor laser diode and manufacturing method thereof - Google Patents

Semiconductor laser diode and manufacturing method thereof Download PDF

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Publication number
KR970060613A
KR970060613A KR1019960000202A KR19960000202A KR970060613A KR 970060613 A KR970060613 A KR 970060613A KR 1019960000202 A KR1019960000202 A KR 1019960000202A KR 19960000202 A KR19960000202 A KR 19960000202A KR 970060613 A KR970060613 A KR 970060613A
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KR
South Korea
Prior art keywords
clad layer
upper clad
layer
content
laser diode
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KR1019960000202A
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Korean (ko)
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KR100357979B1 (en
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양승기
심종인
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김광호
삼성전자 주식회사
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Priority to KR1019960000202A priority Critical patent/KR100357979B1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/60—Receivers
    • H04B10/66—Non-coherent receivers, e.g. using direct detection
    • H04B10/67—Optical arrangements in the receiver

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Semiconductor Lasers (AREA)

Abstract

본 발명은 발광 영역이 작은 단일 모드로 동작하는 리지 구조 혹은 매립 헤테로 리지(BHR; buried hetero ridge)구조의 반도체 레이저 다이오드 및 그 제조 방법에 관한 것으로, 스트라이프 상의 리지 구조의 하부를 이루는 제2상부 크래드층에 포함된 Al 성분의 함유량을 스트라이프 방향으로 달리함으로써, 즉, 레이저 빔이 나오는 경면쪽의 Al 성분의 함유량을 적게함으로써, 그 부분의 굴절율을 낮게하여 방출되는 레이저 빔의 far-field pattern이 양호해지며, 그 제조 방법에 있어서는, 제2상부 크래드층을 형성하기 위한 마스크의 패턴을 레이저 빔이 나오는 경면부 쪽을 상대적으로 넓게함으로써, 손쉽게 제2상부 크래드층의 레이저 빔이 나오는 경면부 쪽의 Al의 함유량을 낮게할 수 있는 장점이 있다.The present invention relates to a semiconductor laser diode having a ridge structure or a buried hetero ridge (BHR) structure in which a light emitting region operates in a single mode with a small light emitting region and a method of manufacturing the same, By reducing the content of the Al component in the stripe direction, that is, by reducing the content of the Al component on the mirror surface side from which the laser beam is emitted, the refractive index of the portion is decreased and the far- In the manufacturing method, by making the pattern of the mask for forming the second upper clad layer relatively wider on the specular surface side where the laser beam comes out, it is possible to easily obtain the mirror surface of the second upper clad layer There is an advantage that the content of Al in the negative side can be lowered.

Description

반도체 레이저 다이오드 및 그 제조 방법Semiconductor laser diode and manufacturing method thereof

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.

제5도는 본 발명에 따른 반도체 레이저 다이오드의 단면도.5 is a cross-sectional view of a semiconductor laser diode according to the present invention.

Claims (7)

기판과, 이 기판 상에 순차로 적층된 하부 크래드층, 활성층 및 제1상부 크래드층들과, 상기 제1상부 크래드층상에 스트라이프 상의 리지 형상을 이루도록 순차 적층된 제2상부 크래드층 및 콘택트층과, 이 리지 형상의 제2상부 크래드층 및 콘택트층 측면의 상기 제1상부 크래드층 상에 적층된 전류 차단층을 구비하여 된 반도체 레이저 다이오드에 있어서, 상기 스트라이프 상의 리지 형상의 하부를 이루는 상기 제2상부 크래드층의 레이저 방출이 일어나는 경면족의 굴절율이 그 내부족의 굴절율 보다 작도록 형성한 것을 특징으로 하는 반도체 레이저 다이오드.CLAIMS What is claimed is: 1. A semiconductor device comprising a substrate, a lower clad layer, an active layer and first upper clad layers sequentially stacked on the substrate, and a second upper clad layer sequentially stacked on the first upper clad layer to form a stripe- And a current blocking layer laminated on the first upper clad layer on the side of the contact layer and the second upper clad layer in the ridge shape, wherein the ridge- Wherein a refractive index of a mirror surface group in which laser emission of the second upper clad layer constituting the lower side occurs is smaller than a refractive index of the insufficient refractive index of the second upper clad layer. 제1항에 있어서, 상기 제2상부 크래드층은 AlxGa1-xAs로 형성된 것을 특징으로 하는 반도체 레이저 다이오드.The semiconductor laser diode according to claim 1, wherein the second upper clad layer is formed of Al x Ga 1 -x As. 제2항에 있어서, 상기 제2상부 크래드층은 경면쪽의 Al 함유량이 그 내부쪽의 Al 함유량 보다 적은 것을 특징으로 하는 반도체 레이저 다이오드.3. The semiconductor laser diode according to claim 2, wherein the second upper clad layer has an Al content in the mirror-surface side smaller than an Al content in the inside thereof. 기판 상에 하부 크래드층, 활성층, 제1상부 크래드층을 순차로 성장시키는 제1성장 단계; 상기 제1상부 크래드층 상에 그 중앙부에 일정폭이 스트라이프 상으로 식각되고 일 경면쪽의 폭이 안쪽 보다 넓은 마스크를 형성하는 단계; 상기 마스크를 이용한 선택 성장법으로 상기 제1상부 크래드층의 중앙 상부에 제2상부 크래드층 및 콘택트층을 스트라이프 상의 리지 형태로 성장시키는 제2성장 단계; 상기 마스크를 제거하는 단계; 그리고 상기 스트라이프 상의 리지 양측에 선택적으로 전류 차단층을 성장시키는 제3성장 단계를 포함하는 것을 특징으로 하는 반도체 레이저 다이오드의 제조 방법.A first growth step of successively growing a lower clad layer, an active layer, and a first upper clad layer on a substrate; Forming a mask on the first upper clad layer at a central portion of the first upper clad layer in a stripe-like manner with a predetermined width and having a width larger than the width of the first upper clad layer; A second growth step of growing a second upper clad layer and a contact layer in a stripe-like ridge shape on the center upper portion of the first upper clad layer by selective growth using the mask; Removing the mask; And a third growth step of selectively growing a current blocking layer on both sides of the ridge on the stripe. 제4항에 있어서, 상기 제1성장 단계에서 상기 제1상부 크래드층 상에 산화 방지층을 더 성장시키는 것을 특징으로 하는 반도체 레이저 다이오드의 제조 방법.5. The method of claim 4, further comprising growing an antioxidant layer on the first upper clad layer in the first growth step. 제5항에 있어서, 상기 제2상부 크래드층은 AlxGa1-xAs로 형성된 것을 특징으로 하는 반도체 레이저 다이오드.The semiconductor laser diode according to claim 5, wherein the second upper clad layer is formed of Al x Ga 1 -x As. 제6항에 있어서, 상기 제2상부 크래드층은 경면쪽의 Al 함유량이 그 내부쪽의 Al 함유량 보다 적도록 성장되는 것을 특징으로 하는 반도체 레이저 다이오드의 제조방법.The method of manufacturing a semiconductor laser diode according to claim 6, wherein the second upper clad layer is grown such that the Al content in the mirror-surface side is smaller than the Al content in the inside. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: It is disclosed by the contents of the first application.
KR1019960000202A 1996-01-08 1996-01-08 Semiconductor laser diode and manufacturing method thereof KR100357979B1 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100459888B1 (en) * 1999-02-11 2004-12-03 삼성전자주식회사 A semiconductor laser diode and manufacturing method thereof

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KR20030047421A (en) * 2001-12-10 2003-06-18 (주)옵토웨이 Vertical cavity surface emitter laser and method for fabricating thereof

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US5297158A (en) * 1991-04-22 1994-03-22 Matsushita Electric Industrial Co., Ltd. Semiconductor laser device including a gallium-aluminum arsenic compound
KR950000119B1 (en) * 1991-12-30 1995-01-09 주식회사 금성사 Semiconductor laser structure
BE1007251A3 (en) * 1993-06-28 1995-05-02 Philips Electronics Nv Radiation-emitting semiconductor diode and method of manufacturing it.
JP3326283B2 (en) * 1993-08-05 2002-09-17 シャープ株式会社 Semiconductor laser device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100459888B1 (en) * 1999-02-11 2004-12-03 삼성전자주식회사 A semiconductor laser diode and manufacturing method thereof

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