KR970059796A - Manufacturing method of liquid crystal display device - Google Patents

Manufacturing method of liquid crystal display device Download PDF

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Publication number
KR970059796A
KR970059796A KR1019960000373A KR19960000373A KR970059796A KR 970059796 A KR970059796 A KR 970059796A KR 1019960000373 A KR1019960000373 A KR 1019960000373A KR 19960000373 A KR19960000373 A KR 19960000373A KR 970059796 A KR970059796 A KR 970059796A
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KR
South Korea
Prior art keywords
forming
substrate
film
semiconductor layer
gate electrode
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Application number
KR1019960000373A
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Korean (ko)
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KR100223900B1 (en
Inventor
박성일
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구자홍
Lg 전자주식회사
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Priority to KR1019960000373A priority Critical patent/KR100223900B1/en
Publication of KR970059796A publication Critical patent/KR970059796A/en
Application granted granted Critical
Publication of KR100223900B1 publication Critical patent/KR100223900B1/en

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • G02F1/133711—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers by organic films, e.g. polymeric films
    • G02F1/133723—Polyimide, polyamide-imide

Abstract

본 발명은 액정표시장치의 제조방법에 관한 것으로서, 감광성 폴리이미드막을 보호막 및 배향막으로 사용하여 공정을 단순화하고 공정시간을 단축시키고자 한 것이다. 본 발명에 따른 액정표시장치의 제조방법은 기판을 준비하는 단례; 상기 기판상에 게이트 전극을 형성하는 단계; 상기 게이트 전극표면을 양극산화하고 전면에 게이트 절연막을 형성하는 단계; 상기 게이트 전극 항측 활성영역의 상기 게이트 전연막위에 진성 반도체층과 분순누물층을 형성하는 단계; 상기 분순물 반도체층 양측항에 소오스/드레인 전극 및 노출된 반도체층이 보호되도록 선택적으로 콘택홀을 가지는 감광성 폴리이미드막을 형성하는 단계; 기판전면에 ITO를 형성하는 단계; 상기 콘택홀과 화소영역에 화소전극을 형성하는 단계를 포함하여 이루어진다.The present invention relates to a method of manufacturing a liquid crystal display device, and is intended to simplify a process and shorten a process time by using a photosensitive polyimide film as a protective film and an orientation film. A method of manufacturing a liquid crystal display device according to the present invention includes the steps of preparing a substrate; Forming a gate electrode on the substrate; Anodizing the surface of the gate electrode and forming a gate insulating film on the entire surface; Forming an intrinsic semiconductor layer and a boron nitride layer on the gate precursor film of the gate electrode counter active region; Forming a photosensitive polyimide film having contact holes selectively on both sides of the impurity semiconductor layer to protect the source / drain electrodes and the exposed semiconductor layer; Forming ITO on the entire surface of the substrate; And forming a pixel electrode in the contact hole and the pixel region.

Description

액정표시장치의 제조방법Manufacturing method of liquid crystal display device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.

제2a~2d도는 본 발명의 제1실시예에 따른 액정표시장치의 제조공정 단면도.Figs. 2a to 2d are sectional views of the manufacturing process of the liquid crystal display device according to the first embodiment of the present invention.

Claims (5)

기판을 준비하는 단계; 상기 기판상에 게이트 전극을 형성하는 단계; 상기 게이트 전극표면을 양극산화하고 전면에 게이트 절연막을 형성하는 단계; 상기 게이트 전극 상측 활성영역이러 상기 게이트 절연막위에 진성반도체층과 불순물층을 형성하는 단계; 상기 불순물 반도체층 양측상에 소오스/드레인 전극을 형성하고 노출된불순물 반도체층을 제거하는 단계; 상기 소오스/드레인 전근 및 노출된 반도체층이 보호되도록 선택적으로 콘택홀을 가지는 감광성 폴리이미드막을 형성하는 단계; 기판 전면에 ITO를 형성하는 단계; 상기 콘택홀과 화소영역에 화소전극을 형성하는 단계를 포함하여 이루어짐을 특징으로 하는 액정표시장치의 제조방법.Preparing a substrate; Forming a gate electrode on the substrate; Anodizing the surface of the gate electrode and forming a gate insulating film on the entire surface; Forming an intrinsic semiconductor layer and an impurity layer on the gate insulating layer through the active region on the gate electrode; Forming a source / drain electrode on both sides of the impurity semiconductor layer and removing the exposed impurity semiconductor layer; Forming a photosensitive polyimide film having a contact hole selectively to protect the source / drain transfer layer and the exposed semiconductor layer; Forming ITO on the entire surface of the substrate; And forming a pixel electrode in the contact hole and the pixel region. 제1항에 있어서, 상기 감광성 폴리이미드막을 형성하는 방법은 별도의 감광막수지없이 노광 및 현상공정에 의해 패터닝함을 특징으로 하는 액정표시장치의 제조방법.The method of claim 1, wherein the photosensitive polyimide film is patterned by an exposure and development process without a separate photoresist film. 기판을 준비하는 단계, 상기 기판상에 감광성 보호막을 형성하는 단계, 상기 감광성 보호막상에 화소전극을 형성하는 단계를 포함하여 이루어짐을 특징으로 하는 액정표시장치의 제조방법.A method of manufacturing a liquid crystal display device, comprising: preparing a substrate; forming a photosensitive protective film on the substrate; and forming a pixel electrode on the photosensitive protective film. 제3항에 있어서, 상기 감광성 보호막은 감광성 폴리이미드막으로 형성하는 단계를 포함하는 것을 특징으로 하는 액정표시장치의 제조방법.The method of claim 3, wherein the photosensitive protective film is formed of a photosensitive polyimide film. 제1항에 있어서, 상기 감광성 폴리이미드막중 화소영역상에 있는 부분을 제거하는 단계를 더 포함하는 것을 특징으로 하는 액정표시장치의 제조방법.The method of claim 1, further comprising removing a portion of the photosensitive polyimide film on the pixel region. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: It is disclosed by the contents of the first application.
KR1019960000373A 1996-01-10 1996-01-10 Manufacturing method of liquid crystal display device KR100223900B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019960000373A KR100223900B1 (en) 1996-01-10 1996-01-10 Manufacturing method of liquid crystal display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960000373A KR100223900B1 (en) 1996-01-10 1996-01-10 Manufacturing method of liquid crystal display device

Publications (2)

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KR970059796A true KR970059796A (en) 1997-08-12
KR100223900B1 KR100223900B1 (en) 1999-10-15

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100576113B1 (en) * 1999-01-22 2006-05-03 삼성전자주식회사 Method for fabricating thin film transistor substrate for reflective LCD
KR100857719B1 (en) * 2001-03-26 2008-09-08 엘지디스플레이 주식회사 Liquid Crystal Display and Fabricating Method Thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100576113B1 (en) * 1999-01-22 2006-05-03 삼성전자주식회사 Method for fabricating thin film transistor substrate for reflective LCD
KR100857719B1 (en) * 2001-03-26 2008-09-08 엘지디스플레이 주식회사 Liquid Crystal Display and Fabricating Method Thereof

Also Published As

Publication number Publication date
KR100223900B1 (en) 1999-10-15

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