KR970054053A - Cylindrical Capacitor Manufacturing Method - Google Patents
Cylindrical Capacitor Manufacturing Method Download PDFInfo
- Publication number
- KR970054053A KR970054053A KR1019950057108A KR19950057108A KR970054053A KR 970054053 A KR970054053 A KR 970054053A KR 1019950057108 A KR1019950057108 A KR 1019950057108A KR 19950057108 A KR19950057108 A KR 19950057108A KR 970054053 A KR970054053 A KR 970054053A
- Authority
- KR
- South Korea
- Prior art keywords
- nitride film
- polysilicon layer
- spacer
- anisotropically etching
- mask
- Prior art date
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- Semiconductor Integrated Circuits (AREA)
Abstract
단순한 공정개선을 통하여 온도에 대한 안정성과 공정 재현성을 확보하여 캐패시터를 신뢰성 있게 제조할 수 있는 방법이 개선된다.Simple process improvement improves the method of manufacturing capacitors reliably by securing temperature stability and process reproducibility.
본 발명은 층간절연막을 구비한 반도체 기판에 실린더형 스토리지 노드를 형성하기 위해 콘택홀을 형성하는 제1공정, 상기 결과물에 폴리실리콘층과 질화막을 차례로 적층하는 제2공정, 소정의 마스크 패턴으로 상기 질화막을 이방성 식각하는 제3공정, 상기 질화막 패턴의 양 측벽에 산화막 스페이서를 형성하는 제4공정, 상기 질화막과 질화막 스페이서를 마스크로 이용하여 상기 폴리실리콘층의 일부를 이방성 식각하는 제5공정, 상기 질화막 패턴을 제거하는 제6공정, 상기 산화막 스페이서를 마스크로 이용하여 상기 폴리실리콘층을 이방성 식각하는 제7공정, 및 상기 산화막 스페이서를 제거하는 제8공정을 구비한다.The present invention provides a first process of forming a contact hole to form a cylindrical storage node in a semiconductor substrate having an interlayer insulating film, a second process of sequentially stacking a polysilicon layer and a nitride film on the resultant, and a predetermined mask pattern. A third step of anisotropically etching the nitride film, a fourth step of forming oxide film spacers on both sidewalls of the nitride film pattern, a fifth step of anisotropically etching a part of the polysilicon layer using the nitride film and the nitride film spacer as a mask, and A sixth step of removing the nitride film pattern, a seventh step of anisotropically etching the polysilicon layer using the oxide film spacer as a mask, and an eighth step of removing the oxide film spacer.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.
제2A도 내지 제2E도는 본 발명에 의한 고집적 반도체장치으 캐패시터 제조방법을 각 단계별로 순차적으로 도시한 공정 단면도이다.2A to 2E are process cross-sectional views sequentially showing a capacitor manufacturing method of a highly integrated semiconductor device according to the present invention in each step.
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950057108A KR970054053A (en) | 1995-12-26 | 1995-12-26 | Cylindrical Capacitor Manufacturing Method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950057108A KR970054053A (en) | 1995-12-26 | 1995-12-26 | Cylindrical Capacitor Manufacturing Method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR970054053A true KR970054053A (en) | 1997-07-31 |
Family
ID=66618971
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019950057108A KR970054053A (en) | 1995-12-26 | 1995-12-26 | Cylindrical Capacitor Manufacturing Method |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR970054053A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100540257B1 (en) * | 1998-12-29 | 2006-05-03 | 주식회사 하이닉스반도체 | Method for forming charge storage electrode of semiconductor device |
-
1995
- 1995-12-26 KR KR1019950057108A patent/KR970054053A/en not_active Application Discontinuation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100540257B1 (en) * | 1998-12-29 | 2006-05-03 | 주식회사 하이닉스반도체 | Method for forming charge storage electrode of semiconductor device |
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| Date | Code | Title | Description |
|---|---|---|---|
| WITN | Withdrawal due to no request for examination |