KR970053495A - Semiconductor Device Separation Method - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for separating a semiconductor device, comprising: forming a field oxide film between an active region and electrically separating neighboring devices, wherein the photoresist pattern is formed on a portion of the silicon substrate where the active region is to be formed. Forming a; Implanting impurities for channel stoppers into field fields on both sides using the photoresist pattern as an ion implantation mask; Removing the photoresist pattern and forming a thermal oxide film having a predetermined thickness on the entire surface of the silicon substrate; Etching the thermal oxide film to expose an active region of a silicon substrate and forming a trench having a predetermined depth in the active region; And embedding a single crystal epitaxial silicon layer in the trench, wherein the single crystal epitaxial silicon layer is used as an active region, and thermal oxide films on both sides of the trench are used as field oxide films. As described above, the present invention is a method of forming a trench type field oxide film that does not use a nitride film to separate devices, thereby reducing contamination of particles due to the absence of a nitride film and ensuring sufficient active area. The integration and electrical characteristics of the device can be improved. In addition, it is possible to simplify the manufacturing process due to the ease of field oxide film formation.

Description

Semiconductor Device Separation Method

As this is a public information case, the full text was not included.

(A), (b) and (d) of the accompanying drawings are process drawings for the semiconductor device separation method of the present invention.

Claims (5)

A semiconductor device isolation method for electrically separating adjacent devices by forming a field oxide film between an active region, the method comprising: forming a photoresist pattern on a portion of the silicon substrate where an active region is to be formed; Implanting impurities for channel stoppers into field fields on both sides using the photoresist pattern as an ion implantation mask; Removing the photoresist pattern and forming a thermal oxide film having a predetermined thickness on the entire surface of the silicon substrate; Etching the thermal oxide film to expose an active region of the substrate and forming a trench having a predetermined depth in the active region; And embedding a single crystal epitaxial silicon layer inside the trench, wherein the single crystal epitaxial silicon layer is used as an active region, and thermal oxide films on both sides of the trench are used as field oxide films. The method of claim 1, wherein the implanting of the impurity for the channel stopper comprises injecting boron atoms or BF ₂ under a condition of 20 to 40 KeV and 1 × ^{10 12} to 1 × ^{10 17} atoms / Cm ³ . The method of claim 1, wherein the thermal oxide film is formed to a thickness of about 4000 to 6000 microns. The method of claim 1, wherein the trench has a depth of about 0.5 μm to about 1.0 μm. The method of claim 4, wherein the forming of the trench removes the substrate layer into which the impurity for channel stopper is implanted. ※ Note: The disclosure is based on the initial application.