KR970052734A - High pressure spray etching method and apparatus - Google Patents
High pressure spray etching method and apparatus Download PDFInfo
- Publication number
- KR970052734A KR970052734A KR1019950052736A KR19950052736A KR970052734A KR 970052734 A KR970052734 A KR 970052734A KR 1019950052736 A KR1019950052736 A KR 1019950052736A KR 19950052736 A KR19950052736 A KR 19950052736A KR 970052734 A KR970052734 A KR 970052734A
- Authority
- KR
- South Korea
- Prior art keywords
- etching
- liquid
- chamber
- high pressure
- injection
- Prior art date
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
Abstract
본 발명은 실리콘(Si)또는 갈륨-바소(GA-As)화합물등 반도체 웨이퍼(wafer)를 에칭(eching)하는 공정에 사용되는 고압분사식 에칭(high pressure spray etching)법 및 그 장치에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high pressure spray etching method and apparatus for use in a process of etching a semiconductor wafer such as silicon (Si) or gallium-barso (GA-As) compound.
본 발명의 목적은 에칭액 또는 세척액등 액상체를 고압의 질소가스와 함께 분사하도록 하여 안개와 같은 극히 미세한 액상체 방울을 형성하여 에칭 또는 세정을 행하도록 하므로서 더 적은 양의 에칭액 또는 세척액을 사용하여 반도체 웨이퍼의 에칭작업을 더 짧은 시간내에 에칭작업이 완료되도록 하여 작업능률 향상 및 원가절감을 하도록 하고, 에칭작업의 각 공정에 챔버내벽에 점착되는 에칭액 또는 현상액 방울이 생기지 않게 되는 극히 미세한 액체방울로서 에칭작업을 수행하도록 하므로서 에칭작업 수행을 원활하도록 하고 에칭작업에 필요한 웨이퍼 건조 작업에 소요되는 에너지의 절약에 있는 것이다.It is an object of the present invention to inject a liquid such as an etchant or cleaning solution together with a high pressure nitrogen gas to form an extremely fine droplet of liquid such as a mist to perform etching or cleaning and thus using a smaller amount of etching or cleaning solution. The etching process of the wafer is completed within a shorter time to improve the work efficiency and reduce the cost, and the etching process is an extremely fine liquid droplet that does not generate the etching liquid or developer droplets adhering to the inner wall of the chamber during the etching process. It is to save the energy required for the wafer drying operation required for the etching operation by smoothly performing the etching operation.
상기 목적을 달성하기 위하여 본 발명에 따른 고압분사식 에칭법 및 장치는 에칭액 또는 현상액등을 분사하는 방법에 있어서 종래와 달리 물리현상의 하나인 베르누이 정리를 이용한 것으로 분사노즐에 고압질소가스가 독립적으로 이송되어 분출되는 외부관을 설치하고 이 도관의 내부에 에칭액 또는 현상액등을 끌어내는 내부관을 설치하여 고압질소가 고속으로 분출되면 노즐의 분출구의 압력이 낮아지므로 에칭액등이 액체용기로부터 빠져나와 노즐의 내도관으로 유입되고 분출되는 고압질소에 밀려 노즐의 분출구에서 미세한 액체방울을 형성하여 챔버내부에 있는 웨이퍼에 점착되도록 하고 이때 챔버내벽에 에칭액등이 점착되지 않고 챔버내에 질소가스가 함께 흄가스를 형성하므로 이흄가스를 즉시즉시 제거하도록 하였다.In order to achieve the above object, the high-pressure injection etching method and apparatus according to the present invention utilizes Bernoulli theorem, which is one of the physical phenomena unlike the conventional method in the spraying of the etchant or developer, and the high pressure nitrogen gas is independently transferred to the injection nozzle. Install an inner tube to draw out the etching solution or developer, and if the high pressure nitrogen is ejected at high speed, the pressure of the nozzle is lowered, so the etching solution is released from the liquid container. It is pushed by the high pressure nitrogen which flows into the inner conduit and is ejected to form fine liquid droplets at the nozzle ejection opening so that it sticks to the wafer inside the chamber. At this time, the etching solution does not adhere to the inner wall of the chamber. Therefore, the fume gas was removed immediately.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제2도는 본 발명에 따른 고압분사식 에칭(high pressure spray etching)법 의 간단한 공정 설명도.2 is a simple process explanatory diagram of a high pressure spray etching method according to the present invention.
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950052736A KR0176734B1 (en) | 1995-12-20 | 1995-12-20 | High pressure spray etching method and its apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950052736A KR0176734B1 (en) | 1995-12-20 | 1995-12-20 | High pressure spray etching method and its apparatus |
Publications (2)
Publication Number | Publication Date |
---|---|
KR970052734A true KR970052734A (en) | 1997-07-29 |
KR0176734B1 KR0176734B1 (en) | 1999-04-15 |
Family
ID=19441902
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950052736A KR0176734B1 (en) | 1995-12-20 | 1995-12-20 | High pressure spray etching method and its apparatus |
Country Status (1)
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KR (1) | KR0176734B1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100282444B1 (en) * | 1997-11-29 | 2001-04-02 | 김영환 | chemical injecting device in apparatus for fabrication of semiconductor device |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4763575B2 (en) * | 2006-01-26 | 2011-08-31 | 大日本スクリーン製造株式会社 | Substrate processing apparatus and substrate processing method |
KR100876987B1 (en) * | 2007-11-01 | 2009-01-07 | 주식회사 해진아이엠피 | Glass etching system with co-axial pipe nozzle |
-
1995
- 1995-12-20 KR KR1019950052736A patent/KR0176734B1/en not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100282444B1 (en) * | 1997-11-29 | 2001-04-02 | 김영환 | chemical injecting device in apparatus for fabrication of semiconductor device |
Also Published As
Publication number | Publication date |
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KR0176734B1 (en) | 1999-04-15 |
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