KR970052734A - High pressure spray etching method and apparatus - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high pressure spray etching method and apparatus for use in a process of etching a semiconductor wafer such as silicon (Si) or gallium-barso (GA-As) compound.

It is an object of the present invention to inject a liquid such as an etchant or cleaning solution together with a high pressure nitrogen gas to form an extremely fine droplet of liquid such as a mist to perform etching or cleaning and thus using a smaller amount of etching or cleaning solution. The etching process of the wafer is completed within a shorter time to improve the work efficiency and reduce the cost, and the etching process is an extremely fine liquid droplet that does not generate the etching liquid or developer droplets adhering to the inner wall of the chamber during the etching process. It is to save the energy required for the wafer drying operation required for the etching operation by smoothly performing the etching operation.

In order to achieve the above object, the high-pressure injection etching method and apparatus according to the present invention utilizes Bernoulli theorem, which is one of the physical phenomena unlike the conventional method in the spraying of the etchant or developer, and the high pressure nitrogen gas is independently transferred to the injection nozzle. Install an inner tube to draw out the etching solution or developer, and if the high pressure nitrogen is ejected at high speed, the pressure of the nozzle is lowered, so the etching solution is released from the liquid container. It is pushed by the high pressure nitrogen which flows into the inner conduit and is ejected to form fine liquid droplets at the nozzle ejection opening so that it sticks to the wafer inside the chamber. At this time, the etching solution does not adhere to the inner wall of the chamber. Therefore, the fume gas was removed immediately.

Description

High pressure spray etching method and apparatus

Since this is an open matter, no full text was included.

2 is a simple process explanatory diagram of a high pressure spray etching method according to the present invention.

Claims (5)

In the spray etching method of etching a metal or a semiconductor, a spray nozzle 43 is formed so that the structure of the spray nozzle is formed between the outer tube 431 and the inner tube 432, and connected to the liquid nitrogen communication. High pressure nitrogen gas flows into the inner tube 431 and an etchant or developer is introduced. When a high pressure nitrogen gas is injected from the external injection port, the pressure of the injection port of the internal pipe becomes lower than atmospheric pressure, and the etchant flows into the internal pipe. High pressure injection etching method in which the nitrogen gas injected at high pressure when the pipe injection port is reached is etched at high speed while etching liquid is chopped off the inner pipe injection hole to form fine liquid droplets such as fog. The etching apparatus for performing the high pressure jet etching method is composed of a chamber for carrying out a plurality of liquid passages and etching operations each containing an etching liquid, a solvent liquid, and a cleaning liquid and a liquid nitrogen. High pressure injection etching equipment connected as a pipe, each pipe is provided with a solenoid valve, the solenoid valve is to open and close each pipe by the instruction of the input microcomputer in the control box. The chamber of claim 2, wherein the chamber is formed of a lid and a body, and the lid is hinged to the body to cover the body by an air cylinder to seal and lift the chamber to open a plurality of liquid cylinders and pipes in the center of the lid. Connected fog spray nozzle is installed, fume gas exhaust port and external air inlet are formed on the side wall of the body, and the wafer holder is formed at the center of the bottom of the chamber by rotating the motor. The high pressure jet etching apparatus is provided with the etching liquid drain port and the solvent liquid drain port. 4. The exhaust gas according to claim 3, wherein the hump gas exhaust port is configured to discharge the outside air out of the chamber by a forced exhaust device which is continuously operated during the etching operation. A suction port is a high-pressure injection etching apparatus that is formed to naturally flow the outside air into the chamber space as the fume gas exits the chamber, the mesh grille is assembled to the outside air inlet. The method of claim 3, wherein the etching bag drain port is generated in the process of etching the wafer to discharge the etchant accumulated on the bottom surface of the chamber to the outside of the chamber, the solvent liquid is discharged out of the chamber, the inlet of the etching bag drain and the solvent liquid drain port A high-pressure injection etching apparatus in which a solenoid valve operated according to the instruction of the micon of the control unit is installed to sequentially and alternately open and close the inlet to separate and collect the etching solution and the solvent solution. ※ Note: The disclosure is based on the initial application.