KR970030106A - Emitter array of field emission device and its manufacturing method - Google Patents

Emitter array of field emission device and its manufacturing method Download PDF

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Publication number
KR970030106A
KR970030106A KR1019950045405A KR19950045405A KR970030106A KR 970030106 A KR970030106 A KR 970030106A KR 1019950045405 A KR1019950045405 A KR 1019950045405A KR 19950045405 A KR19950045405 A KR 19950045405A KR 970030106 A KR970030106 A KR 970030106A
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KR
South Korea
Prior art keywords
emitter
emitter array
field emission
transistor
semiconductor substrate
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Application number
KR1019950045405A
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Korean (ko)
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KR100235318B1 (en
Inventor
현창호
허근무
Original Assignee
엄길용
오리온전기 주식회사
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Priority to KR1019950045405A priority Critical patent/KR100235318B1/en
Publication of KR970030106A publication Critical patent/KR970030106A/en
Application granted granted Critical
Publication of KR100235318B1 publication Critical patent/KR100235318B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2329/00—Electron emission display panels, e.g. field emission display panels
    • H01J2329/02—Electrodes other than control electrodes
    • H01J2329/04—Cathode electrodes
    • H01J2329/0407—Field emission cathodes
    • H01J2329/041—Field emission cathodes characterised by the emitter shape
    • H01J2329/0413—Microengineered point emitters

Abstract

본 발명은 전계 방출형 소자의 에미터 어레이 및 그 제조방법에 관한 것으로서, 반도체 기판의 일측에 드레프트를 위한 드레인영역이 에미터 영역까지 확장되어 있는 MOSFET 구조의 트랜지스터를 형성하고, 상기 드레인의 반도체 기판을 식각하여 원뿔 형상의 에미터를 형성하되, 상기 그리프트 영역을 RTP 방법으로 빠르게 형성하여 소자에 다른 영향이 없도록하고, 트랜지스터 형성후 질화막을 두껍게 형성하여 에미터 어레이 형성과 정시 트랜지스터에 영향이 없도록 하였으므로, EDMOSFET의 채널 넓이를 조절하여 과도한 전류의 유입을 막는 전류 제한자(CURRENT LIMITER)의 역할을 하고, 에미터 어레이와 함께 고전압소자를 집적하므로써 드라이버 LSI이 형성 과정에서 고전압소자의 영역과 저전압 로직회로 불리할 수 있어 소자의 형성이 용이하여 공정수율 및 소자 동작의 신뢰성을 향상시킬 수 있다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an emitter array of a field emission device and a method of manufacturing the same, wherein a transistor having a MOSFET structure in which a drain region for a draft is extended to an emitter region is formed on one side of a semiconductor substrate, and the semiconductor of the drain is formed. The substrate is etched to form a conical emitter, but the graft region is quickly formed by the RTP method so that there is no other effect on the device, and the nitride film is formed thick after the transistor is formed, thereby affecting the emitter array and the timing transistor. As the current limiter (CURRENT LIMITER) prevents excessive current from flowing by adjusting the channel width of EDMOSFET and integrating the high voltage device with the emitter array, the driver LSI is formed in the area of high voltage device and low voltage Logic circuits can be disadvantageous, so device formation is easy It is possible to improve the reliability of the device operation.

Description

전계방출형 소자의 에미터 어레이 및 그 제조방법Emitter array of field emission device and its manufacturing method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1a 도 내지 제1e도는 본 발명에 따른 전계방출형 소자의 에미터 어레이에 사용되는 고전압소자의 제조 공정도.1A to 1E are manufacturing process diagrams of a high voltage device used in the emitter array of the field emission device according to the present invention.

제2a도 내지 제2k도는 본 발명에 따른 전계방출형 소자의 에미터 어레이 제조 공정도.2a to 2k is a process chart of the emitter array manufacturing of the field emission device according to the present invention.

Claims (4)

반도체 기판상에 형성되어 있는 다수개의 에미터 어레이와, 상기 에미터 어레이와 연결되는 트랜지스터를 구비하는 전계방출형 소자의 에미터 어레이에 있어서, 상기 트랜지스터의 드레인 영역에 형성되어 있는 에미터 어레이의 에미터용 팁들을 구비하는 전계방출형 소자의 에미터 어레이.An emitter array of a field emission type device comprising a plurality of emitter arrays formed on a semiconductor substrate and transistors connected to the emitter arrays, wherein the emitter arrays are formed in the drain region of the transistors. Emitter array of field emission devices with tips for emitters. 제1도전형의 반도체 기판상에 형성되어 있는 MOSFET 구조의 트랜지스터와, 상기 트랜지스터와 연결되는 에미터 어레이의 에미터용 팁들을 구비하는 전계방출형 소자의 에미터 어레이에 있어서, 상기 트랜지스터의 게이트 일측의 반도체 기판에 제1도전형의 고농도 불순물로 형성되어 있는 소오스 영역과, 상기 소오스 영역내의 일측에 제2도전형의 불순물 형성되어 있는 소오스 콘택 영역과, 상기 게이트 타측의 반도체 기판상에 형성되어 있는 제2도전형의 불순물로된 드레인영역과, 상기 드레인 영역에 형성되어 있는 에미터 어레이용 팁들을 구비하는 전계방출형 소자의 에미터 어레이.2. An emitter array of a field emission type device having a transistor of a MOSFET structure formed on a semiconductor substrate of a first conductivity type and tips for emitters of an emitter array connected to the transistor, A source region formed of a high concentration impurity of a first conductivity type in the semiconductor substrate, a source contact region formed of an impurity of a second conductivity type in one side of the source region, and a second electrode formed on the semiconductor substrate on the other side of the gate. 2. An emitter array of field emission devices comprising a drain region of a two-conductivity impurity and tips for emitter arrays formed in the drain region. 일측에 트랜지스터를 구비하는 전계방출형 소자의 에미터 어레이 제조방법에 있어서, 반도체 기판의 일측에 MOSFET 구조의 트랜지스터를 형성하되, 상기 트랜지스터의 드레인을 에미터 영역까지 확강되도록 형성하는 공정과, 상기 드레임의 반도체 기판을 식각하여 원뿔 형상의 에미터를 형성하는 공정을 구비하는 전계방출형 소자의 에미터 어레이 제조방법.A method of manufacturing an emitter array of a field emission device having a transistor on one side, comprising: forming a transistor having a MOSFET structure on one side of a semiconductor substrate, wherein the drain of the transistor is extended to an emitter region; A method of manufacturing an emitter array of a field emission device comprising the step of etching an arbitrary semiconductor substrate to form a conical emitter. 제1항에 있어서, 상기 드레인 형성시 RTP 방법으로 형성하는 것을 특징으로 하는 전계방출형 소자의 에미터 어레이 제조방법.The method of claim 1, wherein the method of manufacturing an emitter array of a field emission device, characterized in that formed in the drain by the RTP method.
KR1019950045405A 1995-11-30 1995-11-30 Emitter array of field emission device and manufacturing method thereof KR100235318B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950045405A KR100235318B1 (en) 1995-11-30 1995-11-30 Emitter array of field emission device and manufacturing method thereof

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Application Number Priority Date Filing Date Title
KR1019950045405A KR100235318B1 (en) 1995-11-30 1995-11-30 Emitter array of field emission device and manufacturing method thereof

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KR970030106A true KR970030106A (en) 1997-06-26
KR100235318B1 KR100235318B1 (en) 1999-12-15

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100288549B1 (en) * 1997-08-13 2001-06-01 정선종 Field emission display

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5359256A (en) * 1992-07-30 1994-10-25 The United States Of America As Represented By The Secretary Of The Navy Regulatable field emitter device and method of production thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100288549B1 (en) * 1997-08-13 2001-06-01 정선종 Field emission display

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