KR970030090A - Manufacturing method of FED device having anodized gate oxide film - Google Patents

Manufacturing method of FED device having anodized gate oxide film Download PDF

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Publication number
KR970030090A
KR970030090A KR1019950044462A KR19950044462A KR970030090A KR 970030090 A KR970030090 A KR 970030090A KR 1019950044462 A KR1019950044462 A KR 1019950044462A KR 19950044462 A KR19950044462 A KR 19950044462A KR 970030090 A KR970030090 A KR 970030090A
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KR
South Korea
Prior art keywords
gate electrode
fed device
manufacturing
oxide film
gate oxide
Prior art date
Application number
KR1019950044462A
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Korean (ko)
Other versions
KR100205058B1 (en
Inventor
김태곤
황성연
Original Assignee
엄길용
오리온전기 주식회사
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Publication date
Application filed by 엄길용, 오리온전기 주식회사 filed Critical 엄길용
Priority to KR1019950044462A priority Critical patent/KR100205058B1/en
Publication of KR970030090A publication Critical patent/KR970030090A/en
Application granted granted Critical
Publication of KR100205058B1 publication Critical patent/KR100205058B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/14—Manufacture of electrodes or electrode systems of non-emitting electrodes
    • H01J9/148—Manufacture of electrodes or electrode systems of non-emitting electrodes of electron emission flat panels, e.g. gate electrodes, focusing electrodes or anode electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2329/00—Electron emission display panels, e.g. field emission display panels
    • H01J2329/02—Electrodes other than control electrodes
    • H01J2329/04—Cathode electrodes
    • H01J2329/0407—Field emission cathodes
    • H01J2329/041—Field emission cathodes characterised by the emitter shape
    • H01J2329/0413—Microengineered point emitters
    • H01J2329/0415—Microengineered point emitters conical shaped, e.g. Spindt type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2329/00—Electron emission display panels, e.g. field emission display panels
    • H01J2329/02—Electrodes other than control electrodes
    • H01J2329/04—Cathode electrodes
    • H01J2329/0407—Field emission cathodes
    • H01J2329/0439—Field emission cathodes characterised by the emitter material
    • H01J2329/0442—Metals or metal alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2329/00—Electron emission display panels, e.g. field emission display panels
    • H01J2329/02—Electrodes other than control electrodes
    • H01J2329/04—Cathode electrodes
    • H01J2329/0407—Field emission cathodes
    • H01J2329/0439—Field emission cathodes characterised by the emitter material
    • H01J2329/0463—Semiconductor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2329/00—Electron emission display panels, e.g. field emission display panels
    • H01J2329/46—Arrangements of electrodes and associated parts for generating or controlling the electron beams
    • H01J2329/4604—Control electrodes
    • H01J2329/4608—Gate electrodes
    • H01J2329/4613—Gate electrodes characterised by the form or structure

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Cold Cathode And The Manufacture (AREA)

Abstract

본 발명은 FED 장치의 팁 에미터에서 방출되는 전자에 의하여 게이트 전극이 손상되는 것을 방지하기 위하여 게이트 전극에 대하여 양극 산화를 행하는 방법을 제공한 것으로, 감광제를 사용하여 게이트 전극을 양극 산화시키는 방법과 질화막을 사용하여 게이트 전극을 양극 산화시키는 제조방법을 제공하였으며, 이러한 방법을 이용하여 게이트 전극을 보호함으로서 FED 장치의 안정성과 수명이 향상되는 효과를 기대할 수 있게 되었다.The present invention provides a method of anodizing a gate electrode in order to prevent the gate electrode from being damaged by electrons emitted from a tip emitter of an FED device. A method of anodizing a gate electrode using a nitride film has been provided, and by using such a method to protect the gate electrode, an effect of improving stability and lifespan of the FED device can be expected.

Description

양극 산화된 게이트 산화막을 갖는 FED 장치의 제조방법Manufacturing method of FED device having anodized gate oxide film

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2a-2c도는 팁 에미터가 실리콘인 경우에 대하여 감광체를 사용하여 게이트 전극을 양극 산화시키는 방법을 도시한 FED 장치의 단면도.2A-2C are cross-sectional views of an FED device illustrating a method of anodizing a gate electrode using a photoreceptor when the tip emitter is silicon.

제3a-3c도는 팁 에미터가 금속인 경우에 대하여 감광제를 사용하여 게이트 전극을 양극 산화시키는 방법을 도시한 FED 장치의 단면도.3A-3C are cross-sectional views of an FED device showing a method of anodizing a gate electrode using a photosensitizer when the tip emitter is a metal.

제4a-4c도는 질화막을 사용하여 게이트 전극을 양극 산화시키는 방법을 도시한 FED 장치의 단면도.4A-4C are cross-sectional views of an FED device showing a method of anodizing a gate electrode using a nitride film.

Claims (4)

캐소드와 팁 에미터(2, 4)와 게이트 전극 부분을 갖는 FED 장치의 제조방법에 있어서, 상기 FED 장치를 감광제로 도포하는 단계와, 상기 게이트 전극 부분이 노출되도록 에치 백하는 단계와, 상기 노출된 게이트 전극 부분에 대하여 양극 산화를 행하는 단계로 이루어지는 FED 장치의 제조방법.A method of manufacturing a FED device having cathode and tip emitters (2, 4) and a gate electrode portion, the method comprising: applying the FED device with a photosensitizer, etching back to expose the gate electrode portion; A method of manufacturing an FED device comprising the step of performing anodization on a portion of the gate electrode. 제1항에 있어서, 상기 팁 에미터(2)는 실리콘인 것을 특징으로 하는 FED 장치의 제조방법.2. A method according to claim 1, wherein the tip emitter (2) is silicon. 제1항에 있어서, 상기 팁 에미터(4)는 금속인 것을 특징으로 하는 FED 장치의 제조방법.Method according to claim 1, characterized in that the tip emitter (4) is metal. 캐소드와 팁 에미터와 게이트 전극 부분을 갖는 FED 장치의 제조방법에 있어서, 상기 FED 장치를 질화막(9)으로 도포하는 단계와, 상기 게이트 전극 부분과 팁 에미터 부분이 노출되도록 상기 질화막(9)을 에칭하는 단계와, 상기 노출된 게이트 전극 부분에 대하여 양극 산화를 행하는 단계로 이루어지는 FED 장치의 제조방법.A method of manufacturing a FED device having a cathode, a tip emitter, and a gate electrode portion, the method comprising: applying the FED device with a nitride film (9), the nitride film (9) to expose the gate electrode portion and the tip emitter portion; Etching, and performing anodization on the exposed gate electrode portion.
KR1019950044462A 1995-11-28 1995-11-28 Manufacturing method of fed having anode-oxidated gate electrode KR100205058B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950044462A KR100205058B1 (en) 1995-11-28 1995-11-28 Manufacturing method of fed having anode-oxidated gate electrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950044462A KR100205058B1 (en) 1995-11-28 1995-11-28 Manufacturing method of fed having anode-oxidated gate electrode

Publications (2)

Publication Number Publication Date
KR970030090A true KR970030090A (en) 1997-06-26
KR100205058B1 KR100205058B1 (en) 1999-06-15

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950044462A KR100205058B1 (en) 1995-11-28 1995-11-28 Manufacturing method of fed having anode-oxidated gate electrode

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Publication number Publication date
KR100205058B1 (en) 1999-06-15

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