KR950004424A - Metal etching method - Google Patents
Metal etching method Download PDFInfo
- Publication number
- KR950004424A KR950004424A KR1019930012948A KR930012948A KR950004424A KR 950004424 A KR950004424 A KR 950004424A KR 1019930012948 A KR1019930012948 A KR 1019930012948A KR 930012948 A KR930012948 A KR 930012948A KR 950004424 A KR950004424 A KR 950004424A
- Authority
- KR
- South Korea
- Prior art keywords
- metal
- etching step
- etching
- post
- transient
- Prior art date
Links
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- Drying Of Semiconductors (AREA)
Abstract
본 발명은 금속표면 위에 형성된 자연 산화막을 제거하는 예비 식각 단계, 금속식각 단계인 주식각 단계, 금속 패턴의 윤곽 및 잔류 금속을 제거하는 과도식각 단계로 이루어지는 금속식각 공정 단계에 있어서, 상기 과도식각 단계 후 웨어퍼와 하부전극 사이의 정전기를 감소시키기 위한 후처리 식각 단계를 더 포함하여 이루어지는 것을 특징으로 하는 금속식각 공정 단계에 관한 것으로, 웨이퍼의 파손 및 손상을 방지하여 반도체 소자의 수율을 향상 시키는 효과가 있다.The present invention is a metal etching process step consisting of a preliminary etching step of removing the natural oxide film formed on the metal surface, the stock etching step of the metal etching step, the contour of the metal pattern and the transient etching step of removing residual metal, the transient etching step The present invention relates to a metal etching process step, further comprising a post-treatment etching step for reducing static electricity between the post wafer and the lower electrode. The effect of improving the yield of the semiconductor device by preventing breakage and damage of the wafer is improved. have.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제1도는 금속식각 장비의 챔버내부 주요부분을 나타내는 단면도1 is a cross-sectional view showing the main part of the chamber inside the metal etching equipment
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019930012948A KR950004424A (en) | 1993-07-09 | 1993-07-09 | Metal etching method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019930012948A KR950004424A (en) | 1993-07-09 | 1993-07-09 | Metal etching method |
Publications (1)
Publication Number | Publication Date |
---|---|
KR950004424A true KR950004424A (en) | 1995-02-18 |
Family
ID=67143196
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019930012948A KR950004424A (en) | 1993-07-09 | 1993-07-09 | Metal etching method |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR950004424A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20030097168A (en) * | 2002-06-19 | 2003-12-31 | 엘지.필립스 엘시디 주식회사 | Dry etching method and method of fabricating thin film transistor array substrate using the same |
-
1993
- 1993-07-09 KR KR1019930012948A patent/KR950004424A/en not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20030097168A (en) * | 2002-06-19 | 2003-12-31 | 엘지.필립스 엘시디 주식회사 | Dry etching method and method of fabricating thin film transistor array substrate using the same |
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