KR950004424A - Metal etching method - Google Patents

Metal etching method Download PDF

Info

Publication number
KR950004424A
KR950004424A KR1019930012948A KR930012948A KR950004424A KR 950004424 A KR950004424 A KR 950004424A KR 1019930012948 A KR1019930012948 A KR 1019930012948A KR 930012948 A KR930012948 A KR 930012948A KR 950004424 A KR950004424 A KR 950004424A
Authority
KR
South Korea
Prior art keywords
metal
etching step
etching
post
transient
Prior art date
Application number
KR1019930012948A
Other languages
Korean (ko)
Inventor
김상권
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019930012948A priority Critical patent/KR950004424A/en
Publication of KR950004424A publication Critical patent/KR950004424A/en

Links

Landscapes

  • Drying Of Semiconductors (AREA)

Abstract

본 발명은 금속표면 위에 형성된 자연 산화막을 제거하는 예비 식각 단계, 금속식각 단계인 주식각 단계, 금속 패턴의 윤곽 및 잔류 금속을 제거하는 과도식각 단계로 이루어지는 금속식각 공정 단계에 있어서, 상기 과도식각 단계 후 웨어퍼와 하부전극 사이의 정전기를 감소시키기 위한 후처리 식각 단계를 더 포함하여 이루어지는 것을 특징으로 하는 금속식각 공정 단계에 관한 것으로, 웨이퍼의 파손 및 손상을 방지하여 반도체 소자의 수율을 향상 시키는 효과가 있다.The present invention is a metal etching process step consisting of a preliminary etching step of removing the natural oxide film formed on the metal surface, the stock etching step of the metal etching step, the contour of the metal pattern and the transient etching step of removing residual metal, the transient etching step The present invention relates to a metal etching process step, further comprising a post-treatment etching step for reducing static electricity between the post wafer and the lower electrode. The effect of improving the yield of the semiconductor device by preventing breakage and damage of the wafer is improved. have.

Description

금속식각 방법Metal etching method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 금속식각 장비의 챔버내부 주요부분을 나타내는 단면도1 is a cross-sectional view showing the main part of the chamber inside the metal etching equipment

Claims (2)

금속표면 위에 형성된 자연 산화막을 제거하는 예비식각 단계, 금속식각 단계인 주식각 단계, 금속 패턴의 윤곽 및 잔류 금속을 제거하는 과도식각 단계로 이루어지는 금속식각 방법에 있어서, 상기 과도식각 단계 후 웨이퍼와 하부전극 사이의 정전기를 감소시키기 위한 후처리 식각 단계를 더 포함하여 이루어지는 것을 특징으로 하는 금속식각 방법A metal etching method comprising a pre-etching step of removing a natural oxide film formed on a metal surface, a stock-etching step, which is a metal-etching step, a contour of a metal pattern, and a transient-etching step of removing residual metal, wherein the wafer and the lower part after the transient etching step Metal etching method further comprises a post-treatment etching step for reducing the static electricity between the electrodes 제1항에 있어서, 상기 후처리 식각 단계는 150∼200W(Watt)의 낮은 전력에서 2∼5초간 진행되는 것을 특징으로 하는 금속식각 공정 단계.The metal etching process step of claim 1, wherein the post-treatment etching is performed at a low power of 150 to 200 Watts (Watt) for 2 to 5 seconds. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930012948A 1993-07-09 1993-07-09 Metal etching method KR950004424A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019930012948A KR950004424A (en) 1993-07-09 1993-07-09 Metal etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930012948A KR950004424A (en) 1993-07-09 1993-07-09 Metal etching method

Publications (1)

Publication Number Publication Date
KR950004424A true KR950004424A (en) 1995-02-18

Family

ID=67143196

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930012948A KR950004424A (en) 1993-07-09 1993-07-09 Metal etching method

Country Status (1)

Country Link
KR (1) KR950004424A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030097168A (en) * 2002-06-19 2003-12-31 엘지.필립스 엘시디 주식회사 Dry etching method and method of fabricating thin film transistor array substrate using the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030097168A (en) * 2002-06-19 2003-12-31 엘지.필립스 엘시디 주식회사 Dry etching method and method of fabricating thin film transistor array substrate using the same

Similar Documents

Publication Publication Date Title
KR950015621A (en) Processing method of silicon-based material layer
ATE458272T1 (en) METHOD FOR REDUCING PLASMA-induced CHARGING DAMAGE
KR950004424A (en) Metal etching method
TW374203B (en) A method for forming a fine contact hole in a semiconductor device
KR950027976A (en) Trench cleaning method of semiconductor device
KR960035829A (en) Contact hole formation method of semiconductor device
KR0125244Y1 (en) Plasma etching apparatus
KR980005591A (en) Semiconductor device and method for forming contact hole using the same
KR940001269A (en) Metal wiring formation method of semiconductor device
KR960002569A (en) How to Form Metal Wiring Alignment Keys
JPS55125627A (en) Formation of electrode for semiconductor device
KR980005492A (en) Metal wiring formation method of semiconductor device
KR960002654A (en) Method of inhibiting oxidation of metal film
TW358228B (en) Method of minimizing damage to gate dielectric layer during gate electrode plasma etching
KR970063479A (en) Method of ion implantation of semiconductor device
KR970018106A (en) Multilayer insulating film removal method to facilitate the repair of semiconductor devices
KR980005784A (en) Semiconductor device manufacturing method
KR980005550A (en) Method of forming a contact hole in a semiconductor device
KR960042956A (en) Manufacturing method of semiconductor device
KR960026271A (en) Metal pattern formation method
KR19990074080A (en) Plasma Etching Equipment
KR980006033A (en) Manufacturing method of semiconductor device
KR980005689A (en) Semiconductor device manufacturing method
KR980006504A (en) Method of manufacturing semiconductor device
KR960002562A (en) Contact hole formation method of semiconductor device

Legal Events

Date Code Title Description
WITN Withdrawal due to no request for examination