KR970023862A - Base forming method of power transistor - Google Patents
Base forming method of power transistor Download PDFInfo
- Publication number
- KR970023862A KR970023862A KR1019950036254A KR19950036254A KR970023862A KR 970023862 A KR970023862 A KR 970023862A KR 1019950036254 A KR1019950036254 A KR 1019950036254A KR 19950036254 A KR19950036254 A KR 19950036254A KR 970023862 A KR970023862 A KR 970023862A
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- KR
- South Korea
- Prior art keywords
- base
- forming
- contact mask
- power transistor
- drive
- Prior art date
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- Electrodes Of Semiconductors (AREA)
Abstract
본 발명은 파워 트랜지스터의 베이스 형성방법에 관한 것으로, 특히 디프정션 베이스영역 구조를 실현하기 위하여 이차에 걸친 불순물 이온 주입을 실행하는 고내압 파워 트랜지스터의 제조공정에 있어서 베이스 콘택 마스크(Base Contact Mask)와 산화막 에칭 공정을 생략할 수 있는 파워 트랜지스터의 베이스 형성 방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a base of a power transistor, and more particularly, in order to realize a deep junction base region structure, a base contact mask and The present invention relates to a method for forming a base of a power transistor that can omit an oxide film etching step.
본 발명의 베이스 형성 방법은 제1도전형 반도체 기판위에 산화막을 형성한 후 베이스 콘택용 접촉창을 열어 베이스콘택 마스크를 형성하는 단계와; 상기 베이스콘택 마스크를 이용하여 제2도전형 불순물을 이온 주입하는 단계와; N2분위기에서 저 농도 산소를 사용하여 베이스 드라이브-인 공정을 진행하여 베이스 영역을 형성하는 단계와; 상기 드라이브-인 공정에 이어서 상기 베이스 콘택 마스크를 이용하여 이차 제2도전형 불순물을 이온 주입하는 단계로 구성되는 것을 특징으로 한다.The base forming method of the present invention comprises the steps of: forming a base contact mask by forming an oxide film on a first conductive semiconductor substrate and opening a contact window for the base contact; Ion implanting a second conductive impurity using the base contact mask; Performing a base drive-in process using a low concentration of oxygen in an N 2 atmosphere to form a base region; After the drive-in process, the second contact type impurity is ion implanted using the base contact mask.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.
제2도(가) 내지 (라)는 본 발명에 따른 파워 트랜지스터의 베이스 형성 공정도이다.2A to 2D are process diagrams for forming a base of a power transistor according to the present invention.
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950036254A KR970023862A (en) | 1995-10-19 | 1995-10-19 | Base forming method of power transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950036254A KR970023862A (en) | 1995-10-19 | 1995-10-19 | Base forming method of power transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR970023862A true KR970023862A (en) | 1997-05-30 |
Family
ID=66584376
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019950036254A KR970023862A (en) | 1995-10-19 | 1995-10-19 | Base forming method of power transistor |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR970023862A (en) |
-
1995
- 1995-10-19 KR KR1019950036254A patent/KR970023862A/en not_active Application Discontinuation
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| N231 | Notification of change of applicant | ||
| WITN | Withdrawal due to no request for examination |