KR970030084A - Volcanic metal FEA manufacturing method - Google Patents

Volcanic metal FEA manufacturing method Download PDF

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Publication number
KR970030084A
KR970030084A KR1019950044456A KR19950044456A KR970030084A KR 970030084 A KR970030084 A KR 970030084A KR 1019950044456 A KR1019950044456 A KR 1019950044456A KR 19950044456 A KR19950044456 A KR 19950044456A KR 970030084 A KR970030084 A KR 970030084A
Authority
KR
South Korea
Prior art keywords
gate electrode
volcanic
metal
aperture
oxide film
Prior art date
Application number
KR1019950044456A
Other languages
Korean (ko)
Other versions
KR100205056B1 (en
Inventor
정호련
Original Assignee
엄길용
오리온전기 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엄길용, 오리온전기 주식회사 filed Critical 엄길용
Priority to KR1019950044456A priority Critical patent/KR100205056B1/en
Publication of KR970030084A publication Critical patent/KR970030084A/en
Application granted granted Critical
Publication of KR100205056B1 publication Critical patent/KR100205056B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/14—Manufacture of electrodes or electrode systems of non-emitting electrodes
    • H01J9/148—Manufacture of electrodes or electrode systems of non-emitting electrodes of electron emission flat panels, e.g. gate electrodes, focusing electrodes or anode electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2329/00—Electron emission display panels, e.g. field emission display panels
    • H01J2329/02—Electrodes other than control electrodes
    • H01J2329/04—Cathode electrodes
    • H01J2329/0407—Field emission cathodes
    • H01J2329/041—Field emission cathodes characterised by the emitter shape
    • H01J2329/0413—Microengineered point emitters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2329/00—Electron emission display panels, e.g. field emission display panels
    • H01J2329/46—Arrangements of electrodes and associated parts for generating or controlling the electron beams
    • H01J2329/4604—Control electrodes
    • H01J2329/4608—Gate electrodes
    • H01J2329/4613—Gate electrodes characterised by the form or structure

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Cold Cathode And The Manufacture (AREA)

Abstract

본 발명은 유리기판 위에 도전층을 형성하고, 산화막과 게이트 전극을 형성한다. 그후, 게이트 전극과 산화막을 패터닝하여 애퍼처를 형성하고, 형성된 에퍼처에 측벽을 형성한다. 그 위에 금속을 증착하고 측벽을 제거하므로써 화산형 금속팁 에미터를 형성한다. 그로 인해, 게이트 전극과 에미터 사이의 거리를 0.3㎛ 정도로 감소시켜 저전압에서도 전계방출이 가능하며 높은 전류밀도를 생성한다.The present invention forms a conductive layer on the glass substrate, and forms an oxide film and a gate electrode. Thereafter, the gate electrode and the oxide film are patterned to form an aperture, and sidewalls are formed on the formed aperture. By depositing metal on it and removing the sidewalls, it forms a volcanic metal tip emitter. As a result, the distance between the gate electrode and the emitter is reduced to about 0.3 μm, thereby enabling field emission even at low voltage, and generating high current density.

Description

화산형 금속 FEA 제조방법Volcanic metal FEA manufacturing method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2a도 내지 제2f도는 본 발명에 의한 화산형 금속 FEA 제조공정을 나타내는 단면도.2a to 2f are cross-sectional views showing a volcanic metal FEA manufacturing process according to the present invention.

제3도는 제2a∼2f도에 나타낸 화산형 금속 FEA 제조공정에 의해 제조된 금속팁 에미터를 나타내는 부분사시도.3 is a partial perspective view showing a metal tip emitter manufactured by the volcanic metal FEA manufacturing process shown in FIGS. 2A to 2F.

Claims (1)

유리기판 위에 도전층을 형성하는 단계와, 상기 도전층 위에 산화막을 증착시킨 후에 게이트 전극을 형성하기 위하여 폴리실리콘을 증착하는 단계와, 상기 게이트 전극과 상기 산화막을 선택적으로 에칭하여 애퍼치를 형성하는 단계와, 질화막을 증착한 후에 질화막의 불필요한 부분을 에칭하여 상기 에퍼처에 측벽을 형성하는 단계와, 상기 질화막위에 금속을 증착한 후에 불필요한 부분을 제거하는 단계와, 에미터를 형성하기 위하여 상기 질화막을 에칭하는 단계를 구비하는 것을 특징으로 하는 화산형 금속 FEA 제조방법.Forming a conductive layer on a glass substrate, depositing an oxide film on the conductive layer, depositing polysilicon to form a gate electrode, and selectively etching the gate electrode and the oxide film to form an aperture Forming a sidewall in the aperture by etching an unnecessary portion of the nitride film after depositing a nitride film, removing an unnecessary portion after depositing a metal on the nitride film, and forming the nitride film to form an emitter. Volatile metal FEA manufacturing method comprising the step of etching.
KR1019950044456A 1995-11-28 1995-11-28 Manufacturing method of volcano typed metal fea KR100205056B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950044456A KR100205056B1 (en) 1995-11-28 1995-11-28 Manufacturing method of volcano typed metal fea

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950044456A KR100205056B1 (en) 1995-11-28 1995-11-28 Manufacturing method of volcano typed metal fea

Publications (2)

Publication Number Publication Date
KR970030084A true KR970030084A (en) 1997-06-26
KR100205056B1 KR100205056B1 (en) 1999-06-15

Family

ID=19436237

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950044456A KR100205056B1 (en) 1995-11-28 1995-11-28 Manufacturing method of volcano typed metal fea

Country Status (1)

Country Link
KR (1) KR100205056B1 (en)

Also Published As

Publication number Publication date
KR100205056B1 (en) 1999-06-15

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