KR980005252A

KR980005252A - Method for manufacturing volcanic metal FEA with double gates

Info

Publication number: KR980005252A
Application number: KR1019960025350A
Authority: KR
Inventors: 정호련; 이두열
Original assignee: 엄길용; 오리온전기 주식회사
Priority date: 1996-06-28
Filing date: 1996-06-28
Publication date: 1998-03-30
Also published as: KR100278502B1

Abstract

본 발명은 더블 게이트를 갖는 화산형 FEA (Field-Emission Array) 제조방법에 관한 것으로, 유리 기판(16)위에 캐소우드 전극(12)을 형성하는 공정, 캐소우드 전극(12)위에 하부 절연막(10)을 증착시킨 후 하부 게이트(8)를 형성하는 공정, 하부 게이트(8) 전극위에 상부 절연막(6)을 증착하고 그위에 상부 게이트(4)를 형성하는 공정, 상부 게이트(4)에 포토레지스트를 이용하여 상부 게이트(4)의 불필요한 부분을 제거한 후에 상부 게이트(4) 부분을 습식 식각하는 공정, 상부 절연막(6)을 반응성 이온 에칭법으로 식각한 후에 절연막(6)을 다시 습식 식각하는 공정, 하부 게이트(8)를 식각하고, 하부 절연막(10)을 건식 식각에 의해 제거한 후 포토레지스트를 제거하는 공정, 질화막을 증착한 후에 캐소우드와 맞닿는 하부측의 불필요한 부분을 건식 식각에 제거하는 공정, 스퍼터링에 의해 금속을 증착하고, 습식 식각에 의해 상기 질화막을 제거하므로써 에미터를 형성하는 공정으로 이루어지므로 저전압에서도 전계방출이 가능하며 높은 전류밀도를 생성할 수 있고, 간단하게 제조할 수 있고, 상부 게이트(4) 전극을 사용하여 에미터에서 방출되는 전자를 포커싱(Focussing)하도록 되어 화질의 선명도를 높일 수 있는 효과가 있다.The present invention relates to a method of manufacturing a volute-type FEA (Field-Emission Array) having a double gate, which comprises the steps of forming a cathode electrode 12 on a glass substrate 16, Depositing an upper insulating film 6 on the lower gate electrode 8 and forming an upper gate 4 on the lower gate electrode 8; Wet etching the upper gate 4 portion after removing unnecessary portions of the upper gate 4 by using the reactive ion etching method, etching the upper insulating film 6 by the reactive ion etching method, and then wet etching the insulating film 6 Etching the lower gate 8, removing the lower insulating film 10 by dry etching, removing the photoresist, removing unnecessary portions of the lower side contacting the cathode with dry etching after depositing the nitride film, , Since the metal is deposited by puttering and the nitride film is removed by wet etching to form an emitter, it is possible to emit a field even at a low voltage and to produce a high current density, The electrons emitted from the emitters are focussed by using the upper gate electrode 4, so that the sharpness of the image quality can be enhanced.

Description

Method for manufacturing volcanic metal FEA with double gates

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.

제1(a)도~(n)도는 본 발명의 더블 게이트를 갖는 화산형 금속 FEA의 제조공정을 나타내는 도면.FIGS. 1 (a) through (n) are diagrams showing a manufacturing process of a volcanic metal FEA having a double gate according to the present invention. FIG.

제2도는 본 발명의 제조방법에 의해 더블 게이트를 갖는 화산형 금속 FEA를 개략적으로 나타내는 일부 절개사시도.FIG. 2 is a partially cutaway perspective view schematically showing a volcanic metal FEA having a double gate according to the manufacturing method of the present invention. FIG.

Claims

Forming a cathode electrode (12) on the glass substrate (16); Depositing a lower insulating film (10) on the cathode electrode (12) and forming a lower gate (8); Depositing an upper insulating film (6) on the lower gate (8) electrode and forming an upper gate (4) thereon; Wet etching the portion of the upper gate (4) after removing an unnecessary portion of the upper gate (4) using the photoresist in the upper gate (4); Etching the upper insulating film (6) by a reactive ion etching method, and then wet etching the upper insulating film (6); Etching the lower gate (8), removing the lower insulating film (10) by dry etching, and removing the photoresist; Removing unnecessary portions of the lower side contacting the cathode with dry etching after depositing the nitride film; Depositing a metal by sputtering, and removing the nitride film by wet etching to form an emitter. The method of manufacturing a volcanic metal FEA having a double gate.

The method according to claim 1, wherein the upper and lower gates and the upper and lower insulating films are deposited by a PECVD method.

The method for manufacturing a volcanic metal FEA having a double gate according to claim 1, wherein unnecessary portions of the lower side contacting the cathode after the nitride film is deposited are removed by reactive ion etching.

The method of claim 1, wherein the lower insulating layer (10) is etched by reactive ion etching.

The method of claim 1, wherein the emitter is formed of a metal having a higher durability than the emitter of the upper gate (4) and the lower gate (8).

※ Note: It is disclosed by the contents of the first application.