KR970024293A - MOSFET and manufacturing method - Google Patents

MOSFET and manufacturing method Download PDF

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Publication number
KR970024293A
KR970024293A KR1019950038993A KR19950038993A KR970024293A KR 970024293 A KR970024293 A KR 970024293A KR 1019950038993 A KR1019950038993 A KR 1019950038993A KR 19950038993 A KR19950038993 A KR 19950038993A KR 970024293 A KR970024293 A KR 970024293A
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KR
South Korea
Prior art keywords
mosfet
active region
field oxide
present
oxide film
Prior art date
Application number
KR1019950038993A
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Korean (ko)
Inventor
김진현
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950038993A priority Critical patent/KR970024293A/en
Publication of KR970024293A publication Critical patent/KR970024293A/en

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  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

본 발명은 MOSFET 및 그 제조방법에 관해 개시한다. 본 발명의 MOSFET는 반도체기판에 형성된 필드산화막과 그 사이의 활성영역 상에 게이트를 구비하는 MOSFET에 있어서, 상기 활성영역상에 상기 게이트가 형성되는 에피텍시층을 구비한다.The present invention relates to a MOSFET and a method of manufacturing the same. The MOSFET of the present invention includes a field oxide film formed on a semiconductor substrate and an epitaxial layer in which the gate is formed on the active region.

본 발명에 의한 MOSFET는 종래의 MOSFET에 비하여 초기 활성영역과 필드산화막간의 심한 단차를 줄여줌으로써, 후속공정에 형성되는 막질의 평탄화를 쉽게할 수 있다. 따라서 평탄도가 우수한 막질을 얻을 수 있다. 이와 같은 평탄도가 우수한 막질은 상부 배선층의 원활한 패턴형성 및 콘택홀의 형성에 유리하다.MOSFET according to the present invention, compared to the conventional MOSFET by reducing the severe step between the initial active region and the field oxide film, it is easy to flatten the film quality formed in the subsequent process. Therefore, the film quality excellent in flatness can be obtained. Such a film having excellent flatness is advantageous for smooth pattern formation and contact hole formation of the upper wiring layer.

Description

MOSFET 및 그 제조방법MOSFET and manufacturing method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1도 내지 제4도는 종래 기술에 의한 MOSFET 및 제조방법을 단계별로 나타낸 도면들이다,1 to 4 are diagrams showing step by step of a MOSFET and a manufacturing method according to the prior art,

제5도 내지 제11도는 본 발명에 의한 MOSFET 및 그 제조방법을 단계별로 나타낸 도면들이다.5 to 11 are diagrams showing step by step of a MOSFET and a method of manufacturing the same according to the present invention.

Claims (2)

반도체기판에 형성된 필드산화막과 그 사이의 활성영역 상에 게이트를 구비하는 MOSFET에 있어서, 상기 활성영역상에 상기 게이트가 형성되는 에피텍시층을 구비하는 것을 특징으로 하는 MOSFET.A MOSFET having a gate on a field oxide film formed on a semiconductor substrate and an active region therebetween, the MOSFET comprising an epitaxial layer on which the gate is formed. 반도체기판 상에 필드산화막을 형성하여 활성영역을 한정하는 단계; 및 상기 활성영역 상에 트랜지스터를 형성하는 단계를 포함하는 MOSFET 제조방법에 있어서, 상기 “활성영역 상에 트랜지스터를 형성하는 단계”는 상기 활성영역 상에 상기 필드산화막과 같은 높이의 에피텍시층을 형성하는 단계와 상기 에피텍시층 상에 트랜지스터를 형성하는 단계를 포함하는 것을 특징으로 하는 MOSFET 제조방법.Forming a field oxide film on the semiconductor substrate to define an active region; And forming a transistor on the active region, wherein the “forming a transistor on the active region” comprises forming an epitaxial layer having the same height as the field oxide layer on the active region. And forming a transistor on the epitaxial layer. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950038993A 1995-10-31 1995-10-31 MOSFET and manufacturing method KR970024293A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950038993A KR970024293A (en) 1995-10-31 1995-10-31 MOSFET and manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950038993A KR970024293A (en) 1995-10-31 1995-10-31 MOSFET and manufacturing method

Publications (1)

Publication Number Publication Date
KR970024293A true KR970024293A (en) 1997-05-30

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950038993A KR970024293A (en) 1995-10-31 1995-10-31 MOSFET and manufacturing method

Country Status (1)

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KR (1) KR970024293A (en)

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