KR970024293A - MOSFET and manufacturing method - Google Patents
MOSFET and manufacturing method Download PDFInfo
- Publication number
- KR970024293A KR970024293A KR1019950038993A KR19950038993A KR970024293A KR 970024293 A KR970024293 A KR 970024293A KR 1019950038993 A KR1019950038993 A KR 1019950038993A KR 19950038993 A KR19950038993 A KR 19950038993A KR 970024293 A KR970024293 A KR 970024293A
- Authority
- KR
- South Korea
- Prior art keywords
- mosfet
- active region
- field oxide
- present
- oxide film
- Prior art date
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- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
본 발명은 MOSFET 및 그 제조방법에 관해 개시한다. 본 발명의 MOSFET는 반도체기판에 형성된 필드산화막과 그 사이의 활성영역 상에 게이트를 구비하는 MOSFET에 있어서, 상기 활성영역상에 상기 게이트가 형성되는 에피텍시층을 구비한다.The present invention relates to a MOSFET and a method of manufacturing the same. The MOSFET of the present invention includes a field oxide film formed on a semiconductor substrate and an epitaxial layer in which the gate is formed on the active region.
본 발명에 의한 MOSFET는 종래의 MOSFET에 비하여 초기 활성영역과 필드산화막간의 심한 단차를 줄여줌으로써, 후속공정에 형성되는 막질의 평탄화를 쉽게할 수 있다. 따라서 평탄도가 우수한 막질을 얻을 수 있다. 이와 같은 평탄도가 우수한 막질은 상부 배선층의 원활한 패턴형성 및 콘택홀의 형성에 유리하다.MOSFET according to the present invention, compared to the conventional MOSFET by reducing the severe step between the initial active region and the field oxide film, it is easy to flatten the film quality formed in the subsequent process. Therefore, the film quality excellent in flatness can be obtained. Such a film having excellent flatness is advantageous for smooth pattern formation and contact hole formation of the upper wiring layer.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.
제1도 내지 제4도는 종래 기술에 의한 MOSFET 및 제조방법을 단계별로 나타낸 도면들이다,1 to 4 are diagrams showing step by step of a MOSFET and a manufacturing method according to the prior art,
제5도 내지 제11도는 본 발명에 의한 MOSFET 및 그 제조방법을 단계별로 나타낸 도면들이다.5 to 11 are diagrams showing step by step of a MOSFET and a method of manufacturing the same according to the present invention.
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950038993A KR970024293A (en) | 1995-10-31 | 1995-10-31 | MOSFET and manufacturing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950038993A KR970024293A (en) | 1995-10-31 | 1995-10-31 | MOSFET and manufacturing method |
Publications (1)
Publication Number | Publication Date |
---|---|
KR970024293A true KR970024293A (en) | 1997-05-30 |
Family
ID=66585054
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950038993A KR970024293A (en) | 1995-10-31 | 1995-10-31 | MOSFET and manufacturing method |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR970024293A (en) |
-
1995
- 1995-10-31 KR KR1019950038993A patent/KR970024293A/en not_active Application Discontinuation
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