KR940016891A - Transistors and manufacturing method thereof - Google Patents

Transistors and manufacturing method thereof Download PDF

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Publication number
KR940016891A
KR940016891A KR1019920023432A KR920023432A KR940016891A KR 940016891 A KR940016891 A KR 940016891A KR 1019920023432 A KR1019920023432 A KR 1019920023432A KR 920023432 A KR920023432 A KR 920023432A KR 940016891 A KR940016891 A KR 940016891A
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KR
South Korea
Prior art keywords
forming
insulating film
manufacturing
gate
source
Prior art date
Application number
KR1019920023432A
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Korean (ko)
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KR950008258B1 (en
Inventor
윤주영
Original Assignee
김광호
삼성전자 주식회사
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Priority to KR1019920023432A priority Critical patent/KR950008258B1/en
Publication of KR940016891A publication Critical patent/KR940016891A/en
Application granted granted Critical
Publication of KR950008258B1 publication Critical patent/KR950008258B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)

Abstract

본 발명은 새로운 트랜지스터 구조 및 이의 제조방법에 관한 것으로, 고집적화에 따라 트랜지스터의 크기가 급격히 감소되면서 발생하는 문제점을 해결하기 위해 채널영역의 표면에 굴곡을 만들어 유효 채널길이를 증가시켜 펀치스루등과 같은 소자에 미치는 악영향을 방지하는 트랜지스터 구조와 이의 제조방법을 제공한다.The present invention relates to a novel transistor structure and a method of manufacturing the same, to solve the problem caused by the rapid decrease in the size of the transistor in accordance with high integration to make the bend on the surface of the channel region to increase the effective channel length, such as punch-through Provided are a transistor structure and a method of manufacturing the same that prevent adverse effects on the device.

Description

트랜지스터 및 이의 제조방법Transistors and manufacturing method thereof

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제 4 도 내지 제 7 도는 본 발명에 의한 MOS트랜지스터의 제조방법을 나타낸 공정순서도.4 to 7 are process flowcharts showing a method of manufacturing a MOS transistor according to the present invention.

Claims (3)

반도체기판에 형성된 소오스 및 드레인영역과, 상기 소오스영역과 드레인영역 사이에 형성되는 표면이 굴곡진 채널영역, 및 상기 채널영역상에 게이트 절연막을 개재하여 형성된 게이트로 구성된 것을 특징으로 하는 트랜지스터.And a source and drain region formed on the semiconductor substrate, a curved channel region formed between the source region and the drain region, and a gate formed on the channel region via a gate insulating film. 반도체기판상에 얇은 절연막을 형성하는 공정과, 상기 얇은 절연막상에 HSG다결정실리콘층을 형성하는 공정, 상기 결과물을 산화시켜 산화막을 형성하는 공정, 상기 산화막을 제거하는 공정, 상기 HSG다결정실리콘층을 제거하는 공정, 게이트 절연막을 형성하는 공정, 상기 게이트 절연막상에 게이트를 형성하는 공정, 및 소오스 및 드레인영역을 형성하는 공정으로 이루어진 것을 특징으로 하는 트랜지스터의 제조방법.Forming a thin insulating film on the semiconductor substrate, forming an HSG polycrystalline silicon layer on the thin insulating film, oxidizing the resultant to form an oxide film, removing the oxide film, and removing the HSG polycrystalline silicon layer. And a step of forming a gate insulating film, a step of forming a gate on the gate insulating film, and a step of forming a source and a drain region. 제 2 항에 있어서, 상기 HSG다결정실리콘의 두께는 100Å~1000Å 정도로 형성되는 것을 특징으로 하는 트랜지스터의 제조방법.3. The method of claim 2, wherein the HSG polysilicon is formed in a thickness of about 100 GPa to 1000 GPa. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019920023432A 1992-12-05 1992-12-05 Transistor and its making method KR950008258B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019920023432A KR950008258B1 (en) 1992-12-05 1992-12-05 Transistor and its making method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920023432A KR950008258B1 (en) 1992-12-05 1992-12-05 Transistor and its making method

Publications (2)

Publication Number Publication Date
KR940016891A true KR940016891A (en) 1994-07-25
KR950008258B1 KR950008258B1 (en) 1995-07-26

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920023432A KR950008258B1 (en) 1992-12-05 1992-12-05 Transistor and its making method

Country Status (1)

Country Link
KR (1) KR950008258B1 (en)

Also Published As

Publication number Publication date
KR950008258B1 (en) 1995-07-26

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