KR970023833A - 반도체소자의 절연방법 - Google Patents

반도체소자의 절연방법 Download PDF

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Publication number
KR970023833A
KR970023833A KR1019950036330A KR19950036330A KR970023833A KR 970023833 A KR970023833 A KR 970023833A KR 1019950036330 A KR1019950036330 A KR 1019950036330A KR 19950036330 A KR19950036330 A KR 19950036330A KR 970023833 A KR970023833 A KR 970023833A
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KR
South Korea
Prior art keywords
film
insulating film
polysilicon
interlayer insulating
forming
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Application number
KR1019950036330A
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English (en)
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KR0153493B1 (ko
Inventor
석종욱
박진호
김태룡
김태욱
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김광호
삼성전자 주식회사
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Priority to KR1019950036330A priority Critical patent/KR0153493B1/ko
Publication of KR970023833A publication Critical patent/KR970023833A/ko
Application granted granted Critical
Publication of KR0153493B1 publication Critical patent/KR0153493B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/32055—Deposition of semiconductive layers, e.g. poly - or amorphous silicon layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

본 발명은 반도체 장치의 제조방법에 관한 것으로서, 특히 폴리실리콘과 금속막 사이의 절연 특성을 개선시키는 반도체 장치의 절연막 형성 방법에 관한 것이다.
발명은 등방성식각 특성을 이용하여 절연 특성을 개선하는 제조방법으로서 얇은 절연막을 이용하여 절연막 아래의 폴리실리콘 막질을 언터컷 단면으로 만드는 플라즈마 식각공정과, 플라즈마 식각 설비에서 SF6, CF, NF3, O2GAS를 혼합하여 폴리실리콘을 등방성 식각하는 공정과, 플라즈마 식각설비에서 등방성식각 특성을 이용하여 반도체 웨이퍼의 임계영역을 제어하는 공정을 포함한다.

Description

반도체소자의 절연방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1A도 내지 제1D도는 본 발명에 따른 반도체 장치의 절연막 형성방법을 공정 순서대로 나타낸 단면도.

Claims (2)

  1. 반도체기판 상에 폴리실리콘막을 도포 후 폴리실리콘산화막 또는 고온 산화막과 같은 제1층간절연막을 얇게 형성하는 공정과, 제1층간절연막을 포토레시스트 패턴작업 후 식각하는 공정과, 언더컷을 형성하기 위해 폴리실리콘막을 등방성 플라즈마식각하는 공정과, 포토레시트막을 제거한 후 제2층간절연막을 기판 전면에 도포하고 제2층간절연막 상부에 금속막을 형성하는 것을 특징으로 하는 반도체 소자의 제조방법.
  2. 제1항에 있어서, 상기 폴리실리콘막의 등방성 식각공정은 SF6, CF, NF3, O2혼합GAS를 이용하여 수행되는 것을 특징으로 하는 반도체 소자의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950036330A 1995-10-20 1995-10-20 반도체소자의 절연방법 KR0153493B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950036330A KR0153493B1 (ko) 1995-10-20 1995-10-20 반도체소자의 절연방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950036330A KR0153493B1 (ko) 1995-10-20 1995-10-20 반도체소자의 절연방법

Publications (2)

Publication Number Publication Date
KR970023833A true KR970023833A (ko) 1997-05-30
KR0153493B1 KR0153493B1 (ko) 1998-12-01

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ID=19430769

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Application Number Title Priority Date Filing Date
KR1019950036330A KR0153493B1 (ko) 1995-10-20 1995-10-20 반도체소자의 절연방법

Country Status (1)

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KR (1) KR0153493B1 (ko)

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Publication number Publication date
KR0153493B1 (ko) 1998-12-01

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