KR970023830A - 반도체 소자 제조 방법 - Google Patents

반도체 소자 제조 방법 Download PDF

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KR970023830A
KR970023830A KR1019950035772A KR19950035772A KR970023830A KR 970023830 A KR970023830 A KR 970023830A KR 1019950035772 A KR1019950035772 A KR 1019950035772A KR 19950035772 A KR19950035772 A KR 19950035772A KR 970023830 A KR970023830 A KR 970023830A
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laser
semiconductor layer
device manufacturing
semiconductor device
multiple harmonic
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KR1019950035772A
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KR0153823B1 (ko
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윤정기
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구자홍
주식회사 Lg전자
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Priority to US08/689,682 priority patent/US5803965A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C30B1/023—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing from solids with amorphous structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02678—Beam shaping, e.g. using a mask
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1016—Apparatus with means for treating single-crystal [e.g., heat treating]

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  • Physics & Mathematics (AREA)
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  • Microelectronics & Electronic Packaging (AREA)
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  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Materials Engineering (AREA)
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  • Thermal Sciences (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)

Abstract

본 발명은 반도체 소자 제조 방법에 있어서, 특히 레이저 조사에 의한 반도체층 저온 결정화 및 활성화 방법에 관한 것이다. 레이저를 이용하여 반도체층을 결정화 또는 활성화할 때, 레이저 펄스마다 에너지가 균일하지 않으면, 결정입자(grain)의 크기 및 트랜지스터와 같은 디바이스를 제작했을 때, 균일한 디바이스 특성을 얻기 어려우므로, 본 발명에서는 안정되고 흡수율이 좋은 파장을 생성하는 레이저 빔을 생성하도록, Nd계열의 고체레이저를 레이저 발진부로 이용하고, 원하는 파장의 빔을 생성하기 위하여 다중하모닉 진동자 생성부를 이용하여 원하는 파장의 빔을 생성하여 이용하는 것을 특징으로 하는 반도체 소자 제조 방법이다.

Description

반도체 소자 제조 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3도는 본 발명의 결정화 및 활성화 공정에 이용되는 장치의 구성도.

Claims (10)

  1. 반도체층을 펄스레이저를 사용하여 결정화(Crystallization)하는 방법에 있어서, 고체레이저를 이용하는 레이저 발진부로 부터 레이저빔을 생성하고, 상기 레이저빔으로 부터 비선형 결정을 이용한 다중 하모닉 진동자 생성부를 이용하여 다중 하모닉 파를 생성하고, 상기 다중 하모닉 파를 필터링하여, 상기 반도체층에 조사하는 단계를 포함하는 반도체 소자 제조 방법.
  2. 제1항에 있어서, 상기 고체레이저는 Nd:YAG레이저, Nd:GLASS등의 Nd계열 레이저인 것을 특징으로 하는 반도체 소자 제조 방법.
  3. 제1항에 있어서, 상기 비선형 결정은 KTiOPO4, KDP중 하나인 것을 특징으로 하는 반도체 소자 제조 방법.
  4. 제1항에 있어서, 상기 다중 하모닉 파 중 상기 반도체층에 흡수율이 큰 소정파장의 하모닉파를 필터링하는 것을 특징으로 하는 반도체 소자 제조 방법.
  5. 제4항에 있어서, 상기 반도체층에 흡수율이 큰 소정파장은300-400nm인 것을 특징으로 하는 반도체 소자 제조 방법.
  6. 이온 주입 또는 이온 도핑으로 손상된 결정구조를 가지는 반도체층을 펄스레이저를 사용하여 활성화하는 방법에 있어서, 고체레이저를 이용하는 레이저 발진부를 통하여 레이저 빔을 생성하고, 상기 레이저 빔으로 부터 비선형 결정을 이용한 다중 하모닉 진동자 생성부를 이용하여 다중 하모닉 파를 생성하고, 상기 다중 하모닉 파를 필터링하여, 상기 반도체층에 조사하는 단계를 포함하는 반도체 소자 제조 방법.
  7. 제6항에 있어서. 상기 고체레이저는 Nd:YAG레이저, Nd:GLASS등의 Nd계열 레이저인 것을 특징으로 하는 반도체 소자 제조 방법.
  8. 제6항에 있어서. 상기 비선형 결정은 KTiOPO4, KDP중 하나인 것을 특징으로 하는 반도체 소자 제조 방법.
  9. 제6항에 있어서, 상기 다중 하모닉 파 중 상기 반도체 층에 흡수율이 큰 소정파장의 하모닉 파를 필터링하는 것을 특징으로 하는 반도체 소자 제조 방법.
  10. 제9항에 있어서, 상기 반도체층에 흡수율이 큰 소정 파장은300-400nm인 것을 특징으로하는 반도체 소자 제조 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950035772A 1995-10-17 1995-10-17 반도체 소자 제조 방법 KR0153823B1 (ko)

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KR1019950035772A KR0153823B1 (ko) 1995-10-17 1995-10-17 반도체 소자 제조 방법
US08/689,682 US5803965A (en) 1995-10-17 1996-08-13 Method and system for manufacturing semiconductor device

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